Abstract: The present disclosure provides compounds useful as inhibitors of SARM1 NADase activity, compositions thereof, and methods of using the same. The present disclosure provides compounds useful for treating a neurodegenerative or neurological disease or disorder, compositions thereof, and methods of using the same.

Abstract: The present invention provides compounds useful as inhibitors of TIR NADase activity, compositions thereof, and methods of using the same. The present invention is useful for inhibition of TIR-domain NADase activity and/or treating microbial infection and/or modulating microbial physiology.

Abstract: Among the various aspects of the present disclosure is the provision is the provision of a SARM1 activating agent or prodrug thereof and methods of using same.

Abstract: The present disclosure provides compounds useful as inhibitors of SARM1 NADase activity, compositions thereof, and methods of using the same. The present disclosure provides compounds useful for treating a neurodegenerative or neurological disease or disorder, compositions thereof, and methods of using the same.

Abstract: The present disclosure provides compounds useful as inhibitors of SARM1 NADase activity, compositions thereof, and methods of using the same. The present disclosure provides compounds useful for treating a neurodegenerative or neurological disease or disorder, compositions thereof, and methods of using the same.

Abstract: The present invention provides compounds useful as inhibitors of TIR NADase activity, compositions thereof, and methods of using the same. The present invention is useful for inhibition of TIR-domain NADase activity and/or treating microbial infection and/or modulating microbial physiology.

Abstract: According to one embodiment, there is provided a rotating electrical machine coil with a conductor and an insulation layer that is provided around the conductor to cover the conductor, the rotating electrical machine coil including a linear part of the coil and a coil end that is separable from and electrically connectable to the linear part of the coil.

Abstract: The present disclosure provides compounds useful as inhibitors of SARM1 NADase activity, compositions thereof, and methods of using the same. The present disclosure provides compounds useful for treating a neurodegenerative or neurological disease or disorder, compositions thereof, and methods of using the same.

Abstract: A medical information management system according to an embodiment includes a storage device and a medical information management apparatus. The storage device stores therein pieces of medical information of patients acquired by an extra-order device that acquires medical information without following medical orders issued by a hospital. The medical information management apparatus is configured to obtain medical information of a patient who is to use the hospital, from among the pieces of medical information stored in the storage device.

Abstract: According to one embodiment, there is provided a rotating electrical machine coil with a conductor and an insulation layer that is provided around the conductor to cover the conductor, the rotating electrical machine coil including a linear part of the coil and a coil end that is separable from and electrically connectable to the linear part of the coil.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, amounting substrate which has wiring layers containing copper, and a joining layer which is provided between the semiconductor element and the wiring layer and made of an alloy containing copper and metal other than copper, and in which a melting point of the alloy is higher than a melting point of the metal.

Abstract: Methods of treating or preventing axonal degradation in neuropathic diseases in mammals are disclosed. The methods can comprise administering to the mammal an effective amount of an agent that acts by increasing sirtuin activity in diseased and/or injured neurons. The methods can also comprise administering to the mammal an effective amount of an agent that acts by increasing NAD activity in diseased and/or injured neurons. Also disclosed are methods of screening agents for treating a neuropathies and recombinant vectors for treating or preventing neuropathies.

Abstract: Methods of treating or preventing axonal degradation in neuropathic diseases in mammals are disclosed. The methods can comprise administering to the mammal an effective amount of an agent that acts by increasing sirtuin activity in diseased and/or injured neurons. The methods can also comprise administering to the mammal an effective amount of an agent that acts by increasing NAD activity in diseased and/or injured neurons. Also disclosed are methods of screening agents for treating a neuropathies and recombinant vectors for treating or preventing neuropathies.

Abstract: A semiconductor device includes a substrate joined to a base by a first junction material and a semiconductor element joined to the substrate by a second junction material. At least one of the first and second junction materials comprises tin, antimony, and cobalt. In some embodiments, the junction materials comprise cobalt having a weight percentage between 0.05 wt % and 0.2 wt %, antimony with a weight percentage between 1 wt % and 10 wt %, and the balance being substantially tin.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, amounting substrate which has wiring layers containing copper, and a joining layer which is provided between the semiconductor element and the wiring layer and made of an alloy containing copper and metal other than copper, and in which a melting point of the alloy is higher than a melting point of the metal.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, a mounting member including Cu, and a bonding layer provided between the semiconductor element and the mounting member. The bonding layer includes a first region including Ti and Cu, and a second region provided between the first region and the mounting member, and including Sn and Cu. A first position along the first direction is positioned between the semiconductor element and a second position along the first direction. The first position is where the composition ratio of Ti in the first region is 0.1 times a maximum value of the composition ratio of Ti. The second position is where the composition ratio of Sn in the second region is 0.1 times a maximum value of the composition ratio of Sn. A distance between the first position and the second position is not less than 0.1 micrometers.

Abstract: According to one embodiment, in a method of testing a semiconductor device, the semiconductor device has a semiconductor element and a substrate which are bonded by bonding material including metal fine particles. Image data of a heat distribution in the semiconductor device are temporally acquired while heating the semiconductor device. A time change of a fractal dimension based on the image data is calculated. An inclination of the time change of the fractal dimension is calculated. The inclination and a reference inclination set in advance are compared. Whether or not the semiconductor device is good is determined.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element and a metal film. The semiconductor element has a first surface and a second surface opposite to the first surface. The metal film is provided above the second surface of the semiconductor element. The metal film includes Cr.