Abstract: A magnetic storage element and an electronic apparatus having a reduced writing current while retaining a magnetism retention property of a storage layer. The magnetic storage element includes a spin orbit layer extending in one direction, a writing line that is electrically coupled to the spin orbit layer, and allows a current to flow in an extending direction of the spin orbit layer, a tunnel junction element including a storage layer, an insulator layer, and a magnetization fixed layer that are stacked in order on the spin orbit layer, and a non-magnetic layer having a film thickness of 2 nm or less, and disposed at any stack position between the spin orbit layer and the insulator layer.

Abstract: Distortion generated in an image is effectively corrected in imaging using an EPI sequence such as DWI without extending an imaging time. After one excitation RF pulse of EPI is applied, a navigator scan in which the polarity of the phase encoding is opposite to that of the main scan is performed continuously to the main scan, and the distortion of the image by using the navigator scan data obtained by the navigator scan is corrected. In a case of multi-shot, phase information obtained from the navigator scan data for each shot is used to perform phase correction and multi-shot reconstruction on the main scan data of each shot.

Abstract: A load measurement device includes an acquisition unit, a first extraction unit, a second extraction unit, and an output unit. The acquisition unit acquires measurement information output from a load distribution sensor that detects a load distribution received from a sole of a subject. The first extraction unit extracts a region having a load value equal to or larger than a first threshold value as a first region based on the measurement information, and detects the first region as a sole region. The second extraction unit extracts a second region having a load value equal to or larger than a second threshold value that is smaller than the first threshold value from a re-extraction target region defined with the first region as a reference, and adds the second region to the sole region. The output unit outputs information related to a load distribution of the sole region.

Abstract: A walking training system according to an embodiment includes: a treadmill; a foot sole load detection unit configured to detect load received from foot soles of a trainee aboard a belt of the treadmill; a first photographing device configured to photograph the trainee from a lateral side; a skeletal information acquisition unit configured to acquire first skeletal information that is skeletal information on the trainee in a sagittal plane from an image photographed by the first photographing device; and a specification unit configured to specify respective pieces of skeletal information on a right leg and a left leg included in the first skeletal information acquired by the skeletal information acquisition unit, based on the load received from the foot soles of the trainee detected by the foot sole load detection unit.

Abstract: Provided is a magnetic storage element including a stack structure which includes a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is reversible, and a non-magnetic layer sandwiched between the fixed layer and the storage layer. The magnetization direction has a direction along a stack direction of the stack structure, and the fixed layer or the storage layer has a region which contains at least one contained element selected from the element group consisting of B, C, N, Al, Mg, and Si at 30 atm % or more and 80 atm % or less.

Abstract: A walking training system, a harness, and an operation method capable of performing training effectively are provided. A walking training system according to an embodiment includes a harness attached to a trainee's trunk and a pulling unit configured to apply a pulling force to the harness, the harness includes a frame fixed to the trainee's trunk, an attaching member to which the pulling unit is attached, and a guide mechanism configured to enable a position of the frame relative to the attaching member to be variable in an up/down direction.

Abstract: The present disclosure is to provide a ferromagnetic tunnel junction element and a method of manufacturing the ferromagnetic tunnel junction element capable of avoiding changes in the characteristics of the element and maintaining a high fabrication yield, while avoiding an increase in the area occupied by the element and an increase in the number of manufacturing steps. The ferromagnetic tunnel junction element to be provided includes: a first magnetic layer; a first insulating layer disposed on the first magnetic layer; a second magnetic layer containing a magnetic transition metal, the second magnetic layer being disposed on the first insulating layer; and a magnesium oxide film containing the magnetic transition metal, the magnesium oxide film being disposed to cover the side surfaces of the second magnetic layer.

Abstract: Provided is a magnetic storage element including a stack structure which includes a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is reversible, and a non-magnetic layer sandwiched between the fixed layer and the storage layer. The magnetization direction has a direction along a stack direction of the stack structure, and the fixed layer or the storage layer has a region which contains at least one contained element selected from the element group consisting of B, C, N, Al, Mg, and Si at 30 atm % or more and 80 atm % or less.

Abstract: To provide a magnetic memory capable of performing stable recording while suppressing occurrence of an inversion error. Provided is a magnetic memory including a spin orbit layer in which a spin-polarized electron is generated by a current, a magnetic memory element having a laminated structure including a magnetic layer in which a magnetization direction changes according to information to be recorded and an insulating layer, and provided on the spin orbit layer, and a voltage application layer for applying a voltage to the magnetic layer via the insulating layer, in which the voltage application layer applies a voltage to the magnetic layer at a same time as the current flowing in the spin orbit layer to change magnetic anisotropy or a magnetic damping constant of the magnetic layer.

Abstract: To provide a magnetic memory capable of performing stable recording while suppressing occurrence of an inversion error. Provided is a magnetic memory including a spin orbit layer in which a spin-polarized electron is generated by a current, a magnetic memory element having a laminated structure including a magnetic layer in which a magnetization direction changes according to information to be recorded and an insulating layer, and provided on the spin orbit layer, and a voltage application layer for applying a voltage to the magnetic layer via the insulating layer, in which the voltage application layer applies a voltage to the magnetic layer at a same time as the current flowing in the spin orbit layer to change magnetic anisotropy or a magnetic damping constant of the magnetic layer.

Abstract: A walking training system and an operation method capable of performing training effectively are provided. A walking training system according to an embodiment includes a harness attached to a trainee's trunk, a first pulling unit configured to apply a pulling force to the harness from a first direction along a horizontal direction, a second pulling unit configured to apply a pulling force to the harness from a second direction along the horizontal direction, and a control unit configured to control the first and second pulling units.

Abstract: A walking training system, a harness, and an operation method capable of performing training effectively are provided. A walking training system according to an embodiment includes a harness attached to a trainee's trunk and a pulling unit configured to apply a pulling force to the harness, the harness includes a frame fixed to the trainee's trunk, an attaching member to which the pulling unit is attached, and a guide mechanism configured to enable a position of the frame relative to the attaching member to be variable in an up/down direction.

Abstract: A walking training system according to this embodiment includes a harness, at least three pulling units, and a control unit configured to control the at least three pulling units in such a way that a position of the harness in a horizontal plane becomes a target position. One of the at least three pulling units is a first pulling unit configured to apply a pulling force to the harness from front of the trainee, another one of the at least three pulling units is a second pulling unit configured to apply a pulling force to the harness from rear of the trainee, and another one of the at least three pulling units is a third pulling unit configured to apply a pulling force to the harness from a direction different from the first and second pulling units.

Abstract: There is provided a magnetic memory that can suppress the increase in manufacturing costs while recording multivalued information in one memory cell, the memory including first and second tunnel junction elements each having a laminated structure including a reference layer with a fixed magnetization direction, a recording layer with a reversible magnetization direction, and an insulating layer sandwiched between the reference layer and the recording layer, a first selection transistor electrically connected to first ends of the first and second tunnel junction elements, a first wire electrically connected to a second end of the first tunnel junction element, and a second wire electrically connected to a second end of the second tunnel junction element.

Abstract: To provide a magnetic storage element, a magnetic storage device, and an electronic device which store multi-value information with a simpler structure.

Abstract: [Overview] [Problem to be Solved] Provided are a magnetic storage element and an electronic apparatus having a reduced writing current while retaining a magnetism retention property of a storage layer. [Solution] The magnetic storage element includes: a spin orbit layer extending in one direction; a writing line that is electrically coupled to the spin orbit layer, and allows a current to flow in an extending direction of the spin orbit layer; a tunnel junction element including a storage layer, an insulator layer, and a magnetization fixed layer that are stacked in order on the spin orbit layer; and a non-magnetic layer having a film thickness of 2 nm or less, and disposed at any stack position between the spin orbit layer and the insulator layer.

Abstract: To provide a magnetic memory for storing multi-level information capable of reading while sufficiently securing a read margin. Provided is a magnetic memory including: first and second magnetic storage elements that are provided between a first wiring and a second wiring crossing each other, and are electrically connected in series; a third wiring electrically connected between the first and second magnetic storage elements; a first determination unit that determines a magnetization state of the first magnetic storage element on the basis of a current flowing to the first magnetic storage element through the third wiring; and a second determination unit that determines a magnetization state of the second magnetic storage element on the basis of a current flowing to the first and second magnetic storage elements through the first wiring, in which the determination state of the second determination unit is changed on the basis of the determination result of the first determination unit.

Abstract: The present disclosure is to provide a ferromagnetic tunnel junction element and a method of manufacturing the ferromagnetic tunnel junction element capable of avoiding changes in the characteristics of the element and maintaining a high fabrication yield, while avoiding an increase in the area occupied by the element and an increase in the number of manufacturing steps. The ferromagnetic tunnel junction element to be provided includes: a first magnetic layer; a first insulating layer disposed on the first magnetic layer; a second magnetic layer containing a magnetic transition metal, the second magnetic layer being disposed on the first insulating layer; and a magnesium oxide film containing the magnetic transition metal, the magnesium oxide film being disposed to cover the side surfaces of the second magnetic layer.

Abstract: To provide a magnetic storage element, a magnetic storage device, and an electronic device which store multi-value information with a simpler structure.

Abstract: To provide a magnetic memory capable of performing stable recording while suppressing occurrence of an inversion error. Provided is a magnetic memory including a spin orbit layer in which a spin-polarized electron is generated by a current, a magnetic memory element having a laminated structure including a magnetic layer in which a magnetization direction changes according to information to be recorded and an insulating layer, and provided on the spin orbit layer, and a voltage application layer for applying a voltage to the magnetic layer via the insulating layer, in which the voltage application layer applies a voltage to the magnetic layer at a same time as the current flowing in the spin orbit layer to change magnetic anisotropy or a magnetic damping constant of the magnetic layer.