Patents by Inventor Yo-Seop LIM

Yo-Seop LIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10346240
    Abstract: A repair information providing device in an integrated circuit including a plurality of memory blocks includes a plurality of faulty cell address registers connected to the memory blocks, respectively, a repair information storage block configured to store repair information including an address of a faulty cell and a memory index indicating a memory block having the faulty cell, a repair information control block configured to read the repair information from the repair information storage block, transfer the address of the faulty cell included in the repair information to the respective faulty cell address registers, and generate a memory block selection signal based on the memory index included in the repair information, and a clock gating block configured to receive a clock signal, and selectively transfer the clock signal to one of the faulty cell address registers connected to the memory block having the faulty cell in response to receiving the memory block selection signal.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: July 9, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju-Hee Han, Yo-Seop Lim, Dong-Kwan Han
  • Publication number: 20170024273
    Abstract: A repair information providing device in an integrated circuit including a plurality of memory blocks includes a plurality of faulty cell address registers connected to the memory blocks, respectively, a repair information storage block configured to store repair information including an address of a faulty cell and a memory index indicating a memory block having the faulty cell, a repair information control block configured to read the repair information from the repair information storage block, transfer the address of the faulty cell included in the repair information to the respective faulty cell address registers, and generate a memory block selection signal based on the memory index included in the repair information, and a clock gating block configured to receive a clock signal, and selectively transfer the clock signal to one of the faulty cell address registers connected to the memory block having the faulty cell in response to receiving the memory block selection signal.
    Type: Application
    Filed: April 11, 2016
    Publication date: January 26, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju-Hee HAN, Yo-Seop LIM, Dong-Kwan HAN