Abstract: In this power semiconductor module, a first lead frame and a second lead frame through which currents flow in opposite directions are arranged so as to overlap each other, whereby the internal inductance can be reduced. In a direction perpendicular to one main surface of a first metal wiring layer, each of the first lead frame and the second lead frame is provided so as not to overlap parts of end surfaces of the first metal wiring layer and a second metal wiring layer. Thus, in a manufacturing process for the power semiconductor module before sealing with sealing resin, it is possible to easily perform positioning between the lead frames and between the metal wiring layer and the lead frame, using the end surfaces, whereby the manufacturing process can be simplified.

Abstract: There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 ?m or less. The circuit surface and the external terminal are each made of copper or copper alloy.

Abstract: The power module includes: a heat spreader having a plate shape and having heat conducting property; a semiconductor element at least thermally connected to a one-side surface of the heat spreader; a highly-heat-dissipating insulation adhesive sheet having a plate shape and having a one-side surface thermally connected to an other-side surface of the heat spreader; a metal plate having a one-side surface thermally connected to an other-side surface of the highly-heat-dissipating insulation adhesive sheet; and a sealing resin member sealing the semiconductor element, the heat spreader, the highly-heat-dissipating insulation adhesive sheet, and the metal plate in a state where an other-side surface of the metal plate is exposed, wherein the highly-heat-dissipating insulation adhesive sheet is a complex obtained by impregnating, with a resin, a porous ceramic sintered body in which ceramic particles have a gap and have been integrally sintered.

Abstract: A semiconductor device includes a first circuit, a second circuit, a wiring member, and a bonding material. The wiring member is connected to one of the first circuit and the second circuit. The bonding material is connected to the other of the first circuit and the second circuit. The wiring member includes a first end, a second end, and a top. The first end and the second end are connected to one of the first circuit and the second circuit. The top is located between the first end and the second end. The top is connected to the other of the first circuit and the second circuit with the bonding material in between.

Abstract: A surface electrode on the front surface of a semiconductor element and a metal foil provided on the surface electrode are partially joined, which makes it possible to reduce stress generated at the end of the metal foil, prevent a failure resulting from a crack in the front surface of the semiconductor element, and enhance reliability of the semiconductor device. Such a semiconductor device includes a semiconductor element having a front surface and a back surface, a surface electrode formed on the front surface of the semiconductor element, and a metal foil partially joined onto an upper surface of the surface electrode.

Abstract: The present invention provides a transplant material of a retinal pigment epithelial cell that can be prepared in a short time at a low cost, and that can be easily controlled at the site of transplantation even though the transplantation method is non-invasive, and a method for producing such transplant material.

Abstract: A power generation device includes a filter holder that is a container filled with water and a filter member. The filter member is composed of porous glass in a form of a plate and arranged in the filter holder between a first space upstream from the filter member and a second space downstream from the filter member. The filter member allows hydrogen ions to pass therethrough more easily than hydroxide ions. The power generation device generates electric power based on a potential difference between the first space and the second space when a water flow from the first space toward the second space is produced in the filter member. The water flow flows along a direction of thickness of the filter member.

Abstract: In this power semiconductor module, a first lead frame and a second lead frame through which currents flow in opposite directions are arranged so as to overlap each other, whereby the internal inductance can be reduced. In a direction perpendicular to one main surface of a first metal wiring layer, each of the first lead frame and the second lead frame is provided so as not to overlap parts of end surfaces of the first metal wiring layer and a second metal wiring layer. Thus, in a manufacturing process for the power semiconductor module before sealing with sealing resin, it is possible to easily perform positioning between the lead frames and between the metal wiring layer and the lead frame, using the end surfaces, whereby the manufacturing process can be simplified.

Abstract: The semiconductor device includes: a heat spreader; a plurality of semiconductor elements; and one or a plurality of temperature detection elements. If a line segment connecting centers of two respective adjacent ones of the semiconductor elements is defined as X, a straight line that passes through one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y1, and a straight line that passes through another one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y2, at least a part of the temperature detection element is located in an arrangement region interposed between Y1 and Y2, as seen in a direction perpendicular to the one-side surface of the heat spreader.

Abstract: The power module includes: a heat spreader having a plate shape and having heat conducting property; a semiconductor element at least thermally connected to a one-side surface of the heat spreader; a highly-heat-dissipating insulation adhesive sheet having a plate shape and having a one-side surface thermally connected to an other-side surface of the heat spreader; a metal plate having a one-side surface thermally connected to an other-side surface of the highly-heat-dissipating insulation adhesive sheet; and a sealing resin member sealing the semiconductor element, the heat spreader, the highly-heat-dissipating insulation adhesive sheet, and the metal plate in a state where an other-side surface of the metal plate is exposed, wherein the highly-heat-dissipating insulation adhesive sheet is a complex obtained by impregnating, with a resin, a porous ceramic sintered body in which ceramic particles have a gap and have been integrally sintered.

Abstract: A semiconductor device includes a semiconductor element, a joint material, a heat spreader, and a sealing resin. The semiconductor element includes a main surface. The main surface has a first outer periphery. The sealing resin seals the semiconductor element, the joint material, and the heat spreader. The heat spreader includes a main body and a protrusion. The protrusion is joined to the main surface by the joint material. The main surface has an exposed surface. The exposed surface is located between the first outer periphery and the joint material. The first outer periphery and the exposed surface are exposed from the joint material. The first outer periphery and the exposed surface are sealed with the sealing resin.

Abstract: A semiconductor module and a power converter are obtained that can be miniaturized while reliably connecting a control signal electrode of a semiconductor chip to a control signal terminal. The semiconductor module includes a base member, a semiconductor chip, a positioning member, and a control signal terminal. The semiconductor chip is mounted on the base member. The semiconductor chip includes a control signal electrode. The positioning member includes a positioning portion that contacts an outer peripheral end portion of the semiconductor chip. The positioning member is disposed on the base member. The control signal terminal is fixed to the positioning member. The control signal terminal is connected to the control signal electrode.

Abstract: A semiconductor device includes a first circuit, a second circuit, a wiring member, and a bonding material. The wiring member is connected to one of the first circuit and the second circuit. The bonding material is connected to the other of the first circuit and the second circuit. The wiring member includes a first end, a second end, and a top. The first end and the second end are connected to one of the first circuit and the second circuit. The top is located between the first end and the second end. The top is connected to the other of the first circuit and the second circuit with the bonding material in between.

Abstract: The object is to provide a technology capable of increasing the reliability of a power semiconductor device. A power semiconductor device includes: a substrate including an insulating layer and a circuit pattern that are disposed in this order; a power semiconductor element electrically connected to the circuit pattern; and an electrode terminal having a thinned portion including a welded portion welded to the circuit pattern by a fiber laser. A thickness of the circuit pattern is not less than 0.2 and not more than 0.5 mm, and a thickness of the thinned portion of the electrode terminal is not less than one time and not more than two times the thickness of the circuit pattern.

Abstract: There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 ?m or less. The circuit surface and the external terminal are each made of copper or copper alloy.

Abstract: There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 ?m or less. The circuit surface and the external terminal are each made of copper or copper alloy.

Abstract: A power generation device includes a filter holder that is a container filled with water and a filter member. The filter member is composed of porous glass in a form of a plate and arranged in the filter holder between a first space upstream from the filter member and a second space downstream from the filter member. The filter member allows hydrogen ions to pass therethrough more easily than hydroxide ions. The power generation device generates electric power based on a potential difference between the first space and the second space when a water flow from the first space toward the second space is produced in the filter member. The water flow flows along a direction of thickness of the filter member.

Abstract: Provided are a semiconductor device which is provided with a circuit board and capable of suppressing an increase in its footprint, and a power conversion apparatus including the semiconductor device. The semiconductor device includes a circuit board, a power semiconductor element, an insulating block, a control signal terminal, a first main terminal, and a second main terminal. The insulating block is disposed so as to surround the power semiconductor element. The control signal terminal is inserted into the insulating block and thereby fixed to the insulating block. The control signal terminal includes a bent portion which partially protrudes above the power semiconductor element from the insulating block, and is bonded to the power semiconductor element. The first main terminal is bonded to the same power semiconductor element as the power semiconductor element to which the control signal terminal is bonded. The second main terminal is bonded to the circuit board.

Abstract: The object is to provide a technology capable of increasing the reliability of a power semiconductor device. A power semiconductor device includes: a substrate including an insulating layer and a circuit pattern that are disposed in this order; a power semiconductor element electrically connected to the circuit pattern; and an electrode terminal having a thinned portion including a welded portion welded to the circuit pattern by a fiber laser. A thickness of the circuit pattern is not less than 0.2 and not more than 0.5 mm, and a thickness of the thinned portion of the electrode terminal is not less than one time and not more than two times the thickness of the circuit pattern.

Abstract: There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 ?m or less. The circuit surface and the external terminal are each made of copper or copper alloy.