Abstract: A controller includes an interface and storage circuitry. The interface communicates with one or more memory devices, each of the memory devices includes multiple memory cells organized in memory blocks. The storage circuitry is configured to perform multiple storage operations to the memory cells in the one or more memory devices, and mark memory blocks in which one or more storage operations have failed as bad blocks. The controller is further configured to identify a pattern of multiple bad blocks occurring over a sequence of multiple consecutive storage operations, the pattern is indicative of a system-level malfunction in a memory system including the controller, and in response to identifying the pattern, to perform a corrective action to the memory system.

Abstract: A method for data storage includes receiving in a memory device data for storage in a group of memory cells. The data is stored in the group by performing a Program and Verify (P&V) process, which applies to the memory cells in the group a sequence of programming pulses and compares respective analog values of the memory cells in the group to respective verification thresholds. Immediately following successful completion of the P&V process, a mismatch between the stored data and the received data is detected in the memory device. An error in storage of the data is reported responsively to the mismatch.

Abstract: A method includes storing data encoded with an Error Correction Code (ECC) in analog memory cells, by buffering the data in a volatile buffer and then writing the buffered data to the analog memory cells while overwriting at least some of the data in the volatile buffer with success indications. Upon detecting a failure in writing the buffered data to the analog memory cells, recovered data is produced by reading both the volatile buffer and the analog memory cells, assigning reliability metrics to respective bits of the recovered data depending on whether the bits were read from the volatile buffer or from the analog memory cells, and applying ECC decoding to the recovered data using the reliability metrics. The recovered data is re-programmed.

Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

Abstract: A method for data storage includes defining an end-to-end mapping between data bits to be stored in a memory device that includes multiple memory cells and predefined programming levels. The data bits are mapped into mapped bits, so that the number of the mapped bits is smaller than the number of the data bits. The data bits are stored in the memory device by programming the mapped bits in the memory cells using a programming scheme that guarantees the end-to-end mapping. After storing the data bits, the data bits are read from the memory device in accordance with the end-to-end mapping.

Abstract: A system for data storage includes one or more non-volatile memory (NVM) devices, each device including multiple memory blocks, and a processor. The processor is configured to assign the memory blocks into groups, to apply a redundant data storage scheme in each of the groups, to identify a group of the memory blocks including at least one bad block that renders remaining memory blocks in the group orphan blocks, to select a type of data suitable for storage in the orphan blocks, and to store the data of the identified type in the orphan blocks.

Abstract: A method includes executing a first memory access operation in a memory. A progress indication, which is indicative of a progress of execution of the first memory access operation, is obtained from the memory. Based on the progress indication, a decision is made whether to suspend the execution of the first memory access operation in order to execute a second memory access operation.

Abstract: A method includes, in a memory device, receiving a command that specifies a peak power consumption that is not to be exceeded by the memory device. A memory of the memory device is configured in accordance with the peak power consumption specified in the command. A data storage operation in the configured memory is performed, while complying with the specified peak power consumption.

Abstract: A method includes, in a memory system that includes multiple memory units, holding information indicative of respective programming durations of the memory units. Data is stored in a stripe that includes a plurality of the memory units, by programming the memory units in the stripe in an order that is set based on the information.

Abstract: A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.

Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

Abstract: A method for data storage includes accepting data for storage in an array of memory cells, which are arranged in rows associated with respective word lines. Data is stored in one or more memory cells of the array using one or more programming levels. In response to a determination that a first memory cell of the one or more memory cells is subject to distortion, a second memory cell may be programmed to a predetermined programming level.

Abstract: A method for data storage includes receiving in a memory device data for storage in a group of memory cells. The data is stored in the group by performing a Program and Verify (P&V) process, which applies to the memory cells in the group a sequence of programming pulses and compares respective analog values of the memory cells in the group to respective verification thresholds. Immediately following successful completion of the P&V process, a mismatch between the stored data and the received data is detected in the memory device. An error in storage of the data is reported responsively to the mismatch.

Abstract: A method includes storing data values in a group of memory cells that share a common isolating layer, by producing quantities of electrical charge representative of the data values at respective regions of the common isolating layer that are associated with the memory cells. A function, which relates a drift of the electrical charge in a given memory cell in the group to the data values stored in one or more other memory cells in the group, is estimated. The drift is compensated for using the estimated function.

Abstract: A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.

Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

Abstract: A method includes, in a memory device, receiving a command that specifies a peak power consumption that is not to be exceeded by the memory device. A memory of the memory device is configured in accordance with the peak power consumption specified in the command. A data storage operation in the configured memory is performed, while complying with the specified peak power consumption.

Abstract: An apparatus includes an interface and a processor. The interface is configured to communicate with a memory device. The processor is configured to send to the memory device, via the interface, a sequence of write commands that program multiple types of memory pages that incur respective different programming durations in the memory device, while inserting in the sequence suspension periods for permitting execution of storage commands that are not part of the sequence, such that at least some of the suspension periods are followed by write commands of types that do not have a shortest programming duration among the programming durations.

Abstract: A method for data storage includes receiving in a memory device data for storage in a group of memory cells. The data is stored in the group by performing a Program and Verify (P&V) process, which applies to the memory cells in the group a sequence of programming pulses and compares respective analog values of the memory cells in the group to respective verification thresholds. Immediately following successful completion of the P&V process, a mismatch between the stored data and the received data is detected in the memory device. An error in storage of the data is reported responsively to the mismatch.