Abstract: Methods and systems for in-situ temperature control are provided. The system includes a temperature-sensing dis. The temperature-sensing disc has a body, a front surface and a back surface opposing the front surface. One or more cameras are positioned on the front surface, the back surface, or both the front surface and the back surface. The one or more cameras are configured for performing infrared-based imaging of a surface of a processing chamber.

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

Abstract: Apparatuses for substrate transfer are provided. A lift pin assembly can include a lift pin, a purge cylinder, and a lift pin guide. The lift pin guide is disposed adjacent the purge cylinder. The lift pin guide and the purge cylinder have a passage formed therethrough in which the lift pin is disposed. The purge cylinder includes one or more nozzles that direct the flow of gas radially inward into a portion of the passage disposed in the purge cylinder. The one or more nozzles are disposed radially outward from the lift pin. The purge cylinder reduces particle deposition on the substrate by preventing contact between the lift pin and the support assembly as the lift pin is in motion.

Abstract: A processing chamber and a processing platform having the same are provided. In one example, the processing chamber includes a process module enclosing a process region, a flow module, a chassis, and a substrate support assembly. The flow module includes four pairs of radial walls connecting outer walls and inner walls of the flow module. The outer, inner and radial walls define four evacuation channels and a center portion. The center portion and evacuation channels fluidly are isolated from each other. The flow module includes four through holes formed 90 degrees apart through the outer wall that are fluidly coupled to the center portion. The chassis is sealingly coupled to the inner wall of the flow module. The substrate support assembly is disposed in the process region to support a substrate therein, wherein an interior of the substrate support assembly is accessible through the four through holes.

Abstract: In one example, a flow module. The flow module has an inner wall and an outer wall equal-distant from the central axis. The flow module has radial walls connected between the outer wall and the inner wall, wherein the outer wall, inner wall and two or more pairs of radial walls define evacuation channels and a center portion. The center portion and evacuation channels are fluidly isolated from each other in the flow module. Two or more through holes are formed through the outer wall and fluidly coupled to the center portion. At least two of the two or more through holes are 180 degrees apart and linearly aligned through the central axis.

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

Abstract: Embodiments described herein relate to a substrate support assembly. The substrate support assembly includes an ESC base assembly having a base channel disposed therein, a facility plate, the facility plate coupled to the ESC base assembly with a vacuum region therebetween, and a seal assembly. The seal assembly includes an upper flange coupled to the base channel of the ESC base assembly, the upper flange disposed in the facility plate, a lower flange coupled to the upper flange, the lower flange disposed in the facility plate, a gasket disposed between the upper flange and the lower flange, and an insulator tube coupled to the lower flange. A passage is connected to the base channel, the passage is defined by connected openings of the upper flange, the gasket, the lower flange, the insulator tube, and the base assembly.

Abstract: Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.

Abstract: Apparatuses for substrate transfer are provided. A lift pin assembly can include a lift pin, a purge cylinder, and a lift pin guide. The lift pin guide is disposed adjacent the purge cylinder. The lift pin guide and the purge cylinder have a passage formed therethrough in which the lift pin is disposed. The purge cylinder includes one or more nozzles that direct the flow of gas radially inward into a portion of the passage disposed in the purge cylinder. The one or more nozzles are disposed radially outward from the lift pin. The purge cylinder reduces particle deposition on the substrate by preventing contact between the lift pin and the support assembly as the lift pin is in motion.

Abstract: Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a base channel disposed therein, and a facility plate having a facility channel disposed therein. The facility plate includes a plate portion and a wall portion. The plate portion is coupled to the ESC base assembly and the wall portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the wall portion of the facility plate, and the seal assembly.

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the second ring component of the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.

Abstract: Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a refrigerant channel disposed therein, and a facility plate having a coolant channel disposed therein. The facility plate includes a plate portion and a flange portion. The plate portion is coupled to the ESC base assembly and the flange portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the flange portion of the facility plate, and the seal assembly.

Abstract: The present disclosure generally relates to process chambers having modular design to provide variable process volume and improved flow conductance and uniformity. The modular design according to the present disclosure achieves improved process uniformity and symmetry with simplified chamber structure. The modular design further affords flexibility of performing various processes or processing substrates of various sizes by replacing one of more modules in a modular process chamber according to the present disclosure.

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. A lower surface of the second ring component contains an upper alignment coupling and an upper surface of the adjustable tuning ring contains a lower alignment coupling. The lower alignment coupling of the adjustable tuning ring is configured to mate with the upper alignment coupling of the second ring component to form an interface. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component is varied.

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The second ring component has an inner thickness that is less than an outer thickness, and at least a portion of an upper surface of the second ring component is inwardly angled towards the ring first component. The adjustable tuning ring has an upper surface that contacts the lower surface of the second ring component. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component is varied.

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.

Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.

Abstract: The present disclosure generally relates to apparatus and methods for symmetry in electrical field, gas flow and thermal distribution in a processing chamber to achieve process uniformity. Embodiment of the present disclosure includes a plasma processing chamber having a plasma source, a substrate support assembly and a vacuum pump aligned along the same central axis to create substantially symmetrical flow paths, electrical field, and thermal distribution in the plasma processing chamber resulting in improved process uniformity and reduced skew.

Abstract: Aspects of the present disclosure generally relate to apparatuses and methods for edge ring replacement in processing chambers. In one aspect, a carrier for supporting an edge ring is disclosed. In other aspects, robot blades for supporting a carrier are disclosed. In another aspect, a support structure for supporting a carrier in a degassing chamber is disclosed. In another aspect, a method of transferring an edge ring on a carrier is disclosed.

Abstract: Apparatuses for substrate transfer are provided. A lift pin assembly can include a lift pin, a purge cylinder, and a lift pin guide. The lift pin guide is disposed adjacent the purge cylinder. The lift pin guide and the purge cylinder have a passage formed therethough in which the lift pin is disposed. The purge cylinder includes one or more nozzles that direct the flow of gas radially inward into a portion of the passage disposed in the purge cylinder. The one or more nozzles are disposed radially outward from the lift pin. The purge cylinder reduces particle deposition on the substrate by preventing contact between the lift pin and the support assembly as the lift pin is in motion.