Abstract: A device includes a puck corresponding to an electrostatic chuck. The puck includes a backing region, a chucking region disposed on the backing region and having a plateau, and a set of electrodes embedded within the hybrid puck. The backing region includes a first dielectric material to improve thermal performance of the hybrid puck. The chucking region includes a second dielectric material different from the first dielectric material to improve leakage current stability. The set of electrodes includes a chucking electrode embedded within the chucking region.

Abstract: A device includes a hybrid puck corresponding to an electrostatic chuck. The hybrid puck includes a backing region and a chucking region disposed on the backing region. The backing region includes a first dielectric material to improve thermal performance of the hybrid puck. The chucking region includes a second dielectric material different from the first dielectric material to improve leakage current stability.

Abstract: Methods and systems for in-situ temperature control are provided. The system includes a temperature-sensing dis. The temperature-sensing disc has a body, a front surface and a back surface opposing the front surface. One or more cameras are positioned on the front surface, the back surface, or both the front surface and the back surface. The one or more cameras are configured for performing infrared-based imaging of a surface of a processing chamber.

Abstract: Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.

Abstract: A device includes a hybrid puck corresponding to an electrostatic chuck. The hybrid puck includes a backing region and a chucking region disposed on the backing region. The backing region includes a first dielectric material to improve thermal performance of the hybrid puck. The chucking region includes a second dielectric material different from the first dielectric material to improve leakage current stability.

Abstract: A processing chamber and a processing platform having the same are provided. In one example, the processing chamber includes a process module enclosing a process region, a flow module, a chassis, and a substrate support assembly. The flow module includes four pairs of radial walls connecting outer walls and inner walls of the flow module. The outer, inner and radial walls define four evacuation channels and a center portion. The center portion and evacuation channels fluidly are isolated from each other. The flow module includes four through holes formed 90 degrees apart through the outer wall that are fluidly coupled to the center portion. The chassis is sealingly coupled to the inner wall of the flow module. The substrate support assembly is disposed in the process region to support a substrate therein, wherein an interior of the substrate support assembly is accessible through the four through holes.

Abstract: In one example, a flow module. The flow module has an inner wall and an outer wall equal-distant from the central axis. The flow module has radial walls connected between the outer wall and the inner wall, wherein the outer wall, inner wall and two or more pairs of radial walls define evacuation channels and a center portion. The center portion and evacuation channels are fluidly isolated from each other in the flow module. Two or more through holes are formed through the outer wall and fluidly coupled to the center portion. At least two of the two or more through holes are 180 degrees apart and linearly aligned through the central axis.

Abstract: Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.

Abstract: In one implementation, a showerhead assembly is provided. The showerhead assembly comprises a first electrode having a plurality of openings therethrough and a gas distribution faceplate attached to a first lower major surface of the electrode. The gas distribution plate includes a plurality of through-holes for delivering process gases to a processing chamber. The gas distribution plate is divided into a plurality of temperature-control regions. The showerhead assembly further comprises a chill plate positioned above the electrode for providing temperature control and a plurality of heat control devices to manage heat transfer within the showerhead assembly. The heat control device comprises a thermoelectric module and a heat pipe assembly coupled with the thermoelectric module. Each of the plurality of heat control devices is associated with a temperature control region and provides independent temperature control to its associated temperature control region.

Abstract: A multi-chambered processing platform includes one or more multi-mode plasma processing systems. In embodiments, a multi-mode plasma processing system includes a multi-mode source assembly having a primary source to drive an RF signal on a showerhead electrode within the process chamber and a secondary source to generate a plasma with by driving an RF signal on an electrode downstream of the process chamber. In embodiments, the primary 7 source utilizes RF energy of a first frequency, while the secondary source utilizes RF energy of second, different frequency. The showerhead electrode is coupled to ground through a frequency dependent filter that adequately discriminates between the first and second frequencies for the showerhead electrode to be RF powered during operation of the primary source, yet adequately grounded during operation of the secondary plasma source without electrical contact switching or reliance on physically moving parts.