Abstract: We herein describe a silicon-carbide (SiC) based power semiconductor device comprising: a drain region of a first conductivity type; a drift region of the first conductivity type disposed on the drain region, the drift region having a lower doping concentration compared to the doping concentration of the drain region; a body region of a second conductivity type, opposite to the first conductivity type, disposed over the drift region; a contact region of the first conductivity type, disposed within the body region; a source Ohmic contact being disposed on the source region; and one or more trench gate regions being in contact with the source region, the body region and the drift region. Each of the one or more trench gate regions are configured to form a channel region in the body region between the source region and the drift region.

Abstract: The present invention provides methods and compositions relating to creating or enhancing disease resistance in plants. The invention provides isolated maize Rac nucleic acids and their encoded proteins that are involved in the altering the disease resistance pathway in plants, increasing transformation efficiency, inducing programmed cell death, and modulating the oxidative burst in a plant. The invention further provides recombinant expression cassettes, host cells, transgenic plants, and antibody compositions.