Patents by Inventor Yoh-Rong Liu
Yoh-Rong Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12324208Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.Type: GrantFiled: January 29, 2024Date of Patent: June 3, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yoh-Rong Liu, Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Li-Chi Yu, Sen-Hong Syue
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Publication number: 20240332401Abstract: Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.Type: ApplicationFiled: June 13, 2024Publication date: October 3, 2024Inventors: Li-Chi Yu, Cheng-I Chu, Chen-Fong Tsai, Yi-Rui Chen, Sen-Hong Syue, Wen-Kai Lin, Yoh-Rong Liu, Huicheng Chang, Yee-Chia Yeo
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Patent number: 12040382Abstract: Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.Type: GrantFiled: May 17, 2021Date of Patent: July 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Li-Chi Yu, Cheng-I Chu, Chen-Fong Tsai, Yi-Rui Chen, Sen-Hong Syue, Wen-Kai Lin, Yoh-Rong Liu, Huicheng Chang, Yee-Chia Yeo
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Publication number: 20240194765Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.Type: ApplicationFiled: January 29, 2024Publication date: June 13, 2024Inventors: Yoh-Rong Liu, Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Li-Chi Yu, Sen-Hong Syue
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Patent number: 11923432Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.Type: GrantFiled: January 3, 2023Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yoh-Rong Liu, Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Li-Chi Yu, Sen-Hong Syue
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Publication number: 20230361201Abstract: Embodiments of the present disclosure provide a method for forming a semiconductor device structure. In one embodiment, the method includes forming a fin structure having first semiconductor layers and second semiconductor layers alternatingly stacked, removing edge portions of the second semiconductor layers to form cavities between adjacent first semiconductor layers, selectively forming a passivation layer on sidewalls of the first semiconductor layers, forming a dielectric spacer on sidewalls of the second semiconductor layers and filling in the cavities, wherein the passivation layer is exposed. The method also includes removing the passivation layer, and forming an epitaxial source/drain feature so that the epitaxial source/drain feature is in contact with the first semiconductor layers and the dielectric spacers.Type: ApplicationFiled: May 7, 2022Publication date: November 9, 2023Inventors: Wen-Kai LIN, Che-Hao CHANG, Yoh-Rong LIU, Zhen-Cheng WU, Chi On CHUI
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Publication number: 20230361199Abstract: Provided is a device with a replacement spacer structure and a method for forming such a structure. The method includes forming an initial spacer structure, wherein the initial spacer structure has an initial etch rate for a selected etchant. The method further includes removing a portion of the initial spacer structure, wherein a remaining portion of the initial spacer structure is not removed. Also, the method includes forming a replacement spacer structure adjacent to the remaining portion of the initial spacer structure to form a combined spacer structure, wherein the combined spacer structure has an intermediate etch rate for the selected etchant that is less than the initial etch rate for a selected etchant. Further, the method includes etching the combined spacer structure with the selected etchant to form a final spacer structure.Type: ApplicationFiled: May 5, 2022Publication date: November 9, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chang-Ta Chen, Ming-Chang Wen, Kuo-Feng Yu, Chen-Yu Tai, Yun Lee, Poya Chuang, Chun-Ming Yang, Yoh-Rong Liu, Ya-Ting Yang
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Publication number: 20230144899Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.Type: ApplicationFiled: January 3, 2023Publication date: May 11, 2023Inventors: Yoh-Rong Liu, Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Li-Chi Yu, Sen-Hong Syue
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Patent number: 11545559Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.Type: GrantFiled: April 14, 2021Date of Patent: January 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yoh-Rong Liu, Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Li-Chi Yu, Sen-Hong Syue
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Publication number: 20220336636Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.Type: ApplicationFiled: April 14, 2021Publication date: October 20, 2022Inventors: Yoh-Rong Liu, Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Li-Chi Yu, Sen-Hong Syue
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Publication number: 20220262925Abstract: Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.Type: ApplicationFiled: May 17, 2021Publication date: August 18, 2022Inventors: Li-Chi Yu, Cheng-I Chu, Chen-Fong Tsai, Yi-Rui Chen, Sen-Hong Syue, Wen-Kai Lin, Yoh-Rong Liu, Huicheng Chang, Yee-Chia Yeo