Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: Some examples described herein provide for controlling output modulation amplitude for optoelectronic devices. In an example, a method includes transmitting a data pattern to an optical modulator device. The method also includes identifying, for each heater control value of a plurality of heater control values for a heater thermally coupled with the optical modulator device, an optical modulation amplitude corresponding to the heater control value based on a corresponding photodiode current value identified while transmitting the data pattern. The method also includes determining a maximum optical modulation amplitude for the optical modulator device based on a plurality of optical modulation amplitudes corresponding to the plurality of heater control values according to the identifying. The method also includes controlling the heater based at least in part on the determined maximum optical modulation amplitude that has been modified according to scaling maximum photodiode current values.

Abstract: Some examples described herein provide for controlling output modulation amplitude for optoelectronic devices. In an example, a method includes transmitting a first data pattern to an optical modulator device. The method also includes determining, while transmitting the first data pattern and for each heater control value of a plurality of heater control values for a heater, a photodiode current value associated with the optical modulator device to generate a plurality of photodiode current values corresponding to the plurality of heater control values. The method also includes determining a maximum optical modulation amplitude for the optical modulator device based at least in part on the plurality of photodiode current values corresponding to the plurality of heater control values. The method also includes controlling the heater for the optical modulator device based on the maximum optical modulation amplitude.

Abstract: A silicon-on-insulator (SOI) dense-wavelength-division-multiplexing (DWDM) device includes micro-ring modulators (MRMs) having radii under 5 micrometers. A 16-channel embodiment may provide a free spectral range of 3.2 THz, 200 GHz channel spacing, 41 GHz bandwidth, and a Q factor of 4500. PN junctions of rib ring waveguides (RWRs) may be perpendicular or parallel with a plane of the RWRs. On-chip inductive components may be used to match reactances of the PN junctions. The RWRs may be relatively wide and a rib bus waveguide may be relatively narrow (e.g., narrower than the RWRs). MRM outer slaps may be wider than inner slabs. Regions inside and outside of the RWRs, including slabs at optical coupling gaps may be doped to improve modulation efficiency. Regions of the rib bus waveguide distant from the optical coupling gaps may be undoped. Cavities may be provided below the MRMs and associated heater elements.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

Abstract: An integrated circuit (IC) device includes a controller circuitry having an input coupled to a photodiode of an optoelectronic circuitry and an output coupled to a heater of the optoelectronic circuitry, the controller circuitry configured to determine a center frequency of the optoelectronic circuitry based on a shape of an input signal received from the photodiode, and provide a heater signal to the heater based on the shape of the input signal and the center frequency of the optoelectronic circuitry.

Abstract: An example method for clock and data recovery (CDR) includes generating, in a set of slicers of a receiver, in addition to a data signal and a first error signal, at least one additional error signal. The method further includes receiving, at a frequency detector (FD) of a CDR unit of the receiver, the data signal, the first error signal, and the at least one additional error signal, and processing them to generate a FD output. The method still further includes multiplying the FD output by a user-defined FD gain, and adding the FD output, as multiplied by the FD gain, in a frequency path of the CDR unit.

Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: Some examples described herein provide for a heterogeneous integration module (HIM) that includes a thermal management apparatus. In an example, an apparatus (e.g., a HIM) includes a wiring substrate, a first component, a second component, and a thermal management apparatus. The first component and the second component are communicatively coupled together via the wiring substrate. The thermal management apparatus is in thermal communication with the first component and the second component. The thermal management apparatus has a first thermal energy flow path for dissipating thermal energy generated by the first component and has a second thermal energy flow path for dissipating thermal energy generated by the second component. The first thermal energy flow path has a lower thermal resistivity than the second thermal energy flow path.

Abstract: Chip packages and methods for fabricating the same are provided which utilize a first heat spreader interfaced with a first integrated circuit (IC) die and a second heat spreader separately interfaced with a second IC die. The separate heat spreaders allow the force applied to the first IC die to be controlled independent of the force applied to the second IC die.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: An example method for clock and data recovery (CDR) includes generating, in a set of slicers of a receiver, in addition to a data signal and a first error signal, at least one additional error signal. The method further includes receiving, at a frequency detector (FD) of a CDR unit of the receiver, the data signal, the first error signal, and the at least one additional error signal, and processing them to generate a FD output. The method still further includes multiplying the FD output by a user-defined FD gain, and adding the FD output, as multiplied by the FD gain, in a frequency path of the CDR unit.

Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

Abstract: An example method for clock and data recovery (CDR) includes generating, in a set of slicers of a receiver, in addition to a data signal and a first error signal, at least one additional error signal. The method further includes receiving, at a frequency detector (FD) of a CDR unit of the receiver, the data signal, the first error signal, and the at least one additional error signal, and processing them to generate a FD output. The method still further includes multiplying the FD output by a user-defined FD gain, and adding the FD output, as multiplied by the FD gain, in a frequency path of the CDR unit.

Abstract: Some examples described herein provide for a heterogeneous integration module (HIM) that includes a thermal management apparatus. In an example, an apparatus (e.g., a HIM) includes a wiring substrate, a first component, a second component, and a thermal management apparatus. The first component and the second component are communicatively coupled together via the wiring substrate. The thermal management apparatus is in thermal communication with the first component and the second component. The thermal management apparatus has a first thermal energy flow path for dissipating thermal energy generated by the first component and has a second thermal energy flow path for dissipating thermal energy generated by the second component. The first thermal energy flow path has a lower thermal resistivity than the second thermal energy flow path.

Abstract: An improved chip package, and methods for fabricating the same are provided that utilize two tier packaging of an optical die and another die commonly disposed over a substrate. In one example, a chip package is provided that includes an optical die, a core die, and an electrical/optical interface die are all disposed over a common substrate. In one example, a first routing region is provided between the core and electrical/optical interface dies, a second routing region is provided between the electrical/optical interface die and the optical dies, and a third routing region is disposed between the substrate and the core and electrical/optical interface dies.

Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.