Patents by Inventor Yohei Chiba
Yohei Chiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12047700Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: August 23, 2023Date of Patent: July 23, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20240239833Abstract: The present invention relates to an alkoxyphenyl derivative capable of synthesizing an oligonucleotide by a quicker liquid phase synthesis method than in the prior art, a protected nucleoside and a protected nucleotide to which the alkoxyphenyl derivative is bonded, a method for producing an oligonucleotide using the same, and a method for selectively removing the alkoxyphenyl derivative moiety and the like. A compound represented by the general formula (1) or a derivative thereof: (In the formula, R each independently represents an optionally substituted alkyl group having 10 to 40 carbons. m represents an integer between 1 and 5. When m is 2 or more, a plurality of ROs may be the same or different. X represents O, S, NH, or NRN. n represents an integer from 1 to 4. RN represents an optionally substituted alkyl group having 1 to 6 carbons.Type: ApplicationFiled: March 13, 2024Publication date: July 18, 2024Inventors: Kazuhiro CHIBA, Yohei OKADA, Hideaki UMEMOTO, Takuya ONAKA
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Publication number: 20240239834Abstract: The present invention relates to an alkoxyphenyl derivative capable of synthesizing an oligonucleotide by a quicker liquid phase synthesis method than in the prior art, a protected nucleoside and a protected nucleotide to which the alkoxyphenyl derivative is bonded, a method for producing an oligonucleotide using the same, and a method for selectively removing the alkoxyphenyl derivative moiety and the like. A compound represented by the general formula (1) or a derivative thereof: (In the formula, R each independently represents an optionally substituted alkyl group having 10 to 40 carbons. m represents an integer between 1 and 5. When m is 2 or more, a plurality of ROs may be the same or different. X represents O, S, NH, or NRN. n represents an integer from 1 to 4. RN represents an optionally substituted alkyl group having 1 to 6 carbons.Type: ApplicationFiled: March 13, 2024Publication date: July 18, 2024Inventors: Kazuhiro CHIBA, Yohei OKADA, Hideaki UMEMOTO, Takuya ONAKA
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Publication number: 20240199321Abstract: A waste collection system includes a movable waste box to automatically travel by using a sensor group including cameras, a sonar, a millimeter wave radar, and a LiDAR, and a supervision apparatus to manage the movable waste box. The movable waste box autonomously moves by following path information indicating a path. The movable waste box includes a waste box to accept waste a person who is present partway on a path has. The supervision apparatus includes a path information generating unit to generate the path information and to transmit the path information to the movable waste box.Type: ApplicationFiled: March 11, 2022Publication date: June 20, 2024Applicant: Mitsubishi Electric CorporationInventors: Yohei CHIBA, Michinori YOSHIDA
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Publication number: 20230396895Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: August 23, 2023Publication date: December 7, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 11778349Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: June 14, 2022Date of Patent: October 3, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20230246048Abstract: Incident light transmitted through a semiconductor substrate is shielded at a boundary between pixels. An imaging element is provided with a pixel, a front surface side light shielding unit, and a back surface side light shielding unit. The pixel is provided with a photoelectric conversion unit that is arranged in a semiconductor substrate on a front surface side of which a wiring region is formed and performs photoelectric conversion of incident light applied from a back surface side of the semiconductor substrate. The front surface side light shielding unit is embedded on the front surface side of the semiconductor substrate at the boundary between the pixels to shield the incident light.Type: ApplicationFiled: April 22, 2021Publication date: August 3, 2023Inventors: TAKETO FUKURO, SHINICHIRO NOUDO, YUMA ONO, YOHEI CHIBA
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Patent number: 11532762Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.Type: GrantFiled: January 19, 2021Date of Patent: December 20, 2022Assignee: SONY CORPORATIONInventors: Kyohei Mizuta, Tomokazu Ohchi, Yohei Chiba
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Patent number: 11470276Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: June 30, 2021Date of Patent: October 11, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20220311964Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: June 14, 2022Publication date: September 29, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 11329002Abstract: Fabrication of an alignment mark in a semiconductor device is simplified. A semiconductor device including a semiconductor substrate, an epitaxial layer, and an alignment mark is provided. The epitaxial layer included in the semiconductor device includes a single-crystalline semiconductor that is epitaxially grown on a surface of the semiconductor substrate included in the semiconductor device. The alignment mark included in the semiconductor device is disposed between the semiconductor substrate and the epitaxial layer.Type: GrantFiled: July 24, 2018Date of Patent: May 10, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Teruyuki Sato, Shinichi Arakawa, Takayuki Enomoto, Yohei Chiba
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Patent number: 11252356Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: June 17, 2020Date of Patent: February 15, 2022Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20220013557Abstract: There is provided a solid-state imaging device having a configuration suitable for high integration. The solid-state imaging device includes a semiconductor layer, a photoelectric converter, a storage capacitor, and a first transistor. The photoelectric converter is provided in the semiconductor layer, and generates an electric charge corresponding to a received light amount by photoelectric conversion. The storage capacitor is provided on the semiconductor layer, and includes a first insulating film having a first electrical film thickness. The first transistor is provided on the semiconductor layer, and includes a second insulating film having a second electrical film thickness larger than the first electrical film thickness.Type: ApplicationFiled: November 19, 2019Publication date: January 13, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shogo FURUYA, Yorito SAKANO, Ryo TAKAHASHI, Atsushi SUZUKI, Ryoichi YOSHIKAWA, Jun SUENAGA, Shinichi KOGA, Yohei CHIBA, Tadamasa SHIOYAMA
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Publication number: 20210329183Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: June 30, 2021Publication date: October 21, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Publication number: 20210184060Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.Type: ApplicationFiled: January 19, 2021Publication date: June 17, 2021Applicant: Sony CorporationInventors: Kyohei Mizuta, Tomokazu Ohchi, Yohei Chiba
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Patent number: 10923607Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.Type: GrantFiled: June 4, 2020Date of Patent: February 16, 2021Assignee: Sony CorporationInventors: Kyohei Mizuta, Tomokazu Ohchi, Yohei Chiba
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Publication number: 20200357938Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.Type: ApplicationFiled: June 4, 2020Publication date: November 12, 2020Applicant: Sony CorporationInventors: Kyohei Mizuta, Tomokazu Ohchi, Yohei Chiba
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Publication number: 20200314371Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: June 17, 2020Publication date: October 1, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Publication number: 20200303317Abstract: Fabrication of an alignment mark in a semiconductor device is simplified. A semiconductor device including a semiconductor substrate, an epitaxial layer, and an alignment mark is provided. The epitaxial layer included in the semiconductor device includes a single-crystalline semiconductor that is epitaxially grown on a surface of the semiconductor substrate included in the semiconductor device. The alignment mark included in the semiconductor device is disposed between the semiconductor substrate and the epitaxial layer.Type: ApplicationFiled: July 24, 2018Publication date: September 24, 2020Inventors: TERUYUKI SATO, SHINICHI ARAKAWA, TAKAYUKI ENOMOTO, YOHEI CHIBA
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Patent number: 10756218Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.Type: GrantFiled: October 23, 2019Date of Patent: August 25, 2020Assignee: Sony CorporationInventors: Kyohei Mizuta, Tomokazu Ohchi, Yohei Chiba