Abstract: A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T1 as the first thin film on a substrate and monitor substrate held and rotated by a rotation drum and, subsequently, furthermore sputtering the targets used in forming the film A to form a film C having an intended film thickness of T3 as the second thin film, which is another thin film having the same composition as the film A; comprising film thickness monitoring steps S4 and S5, a stopping step S7, an actual time acquisition step S8, an actual rate calculating step S9 and a necessary time calculating step S24.

Abstract: An optical film thickness meter capable of measuring an optical film thickness and spectroscopic characteristics highly accurately, and a thin film forming apparatus with the optical film thickness meter are provided. The optical film thickness meter includes a light projector, a light receiver, a monochromator, and a reflection mirror having a reflection surface substantially perpendicularly to the optical axis of measurement light on the side opposite to an actual substrate. The actual substrate is disposed having a predetermined angle to the optical axis. The measurement light passes through the actual substrate twice, whereby a change in transmissivity can be increased, and control accuracy of thickness measurement is improved. Measurement errors caused by a difference in transmission positions is prevented.

Abstract: A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T1 as the first thin film on a substrate and monitor substrate held and rotated by a rotation drum and, subsequently, furthermore sputtering the targets used in forming the film A to form a film C having an intended film thickness of T3 as the second thin film, which is another thin film having the same composition as the film A; comprising film thickness monitoring steps S4 and S5, a stopping step S7, an actual time acquisition step S8, an actual rate calculating step S9 and a necessary time calculating step S24.

Abstract: An optical film thickness meter capable of measurement of an optical film thickness and spectroscopic characteristics with high accuracy and a thin film forming apparatus provided with the optical film thickness meter are provided. The optical film thickness meter includes a light projector (11), a reflection mirror (17), a light receiver (19), and a monochromator (20), and the reflection mirror (17) has a reflection surface disposed substantially perpendicularly to the optical axis of measurement light on the side opposite to an actual substrate (S) with respect to an incident direction of the measurement light. Also, the actual substrate (9) is disposed having a predetermined inclination angle (?) with respect to the optical axis of the measurement light. The measurement light (outgoing light and reflection light) passes through the actual substrate (S) twice, whereby a change amount in transmissivity (light amount) can be increased, and control accuracy of film thickness measurement can be improved.