Abstract: An optical semiconductor device according to the present disclosure includes: a first-conductivity-type semiconductor substrate having a projecting portion; second-conductivity-type intermediate layers formed on both sides of the projecting portion above the semiconductor substrate; a stripe-shaped mesa structure formed of a first-conductivity-type first cladding layer, an active layer, and a second-conductivity-type second cladding layer, which are laminated above a surface including a top of the projecting portion so as to be centered at the projecting portion; buried layers formed on both sides of the mesa structure, to block current; and a second-conductivity-type contact layer formed at surfaces of the mesa structure and the buried layers.

Abstract: A semiconductor laser in which a PD unit monitoring an optical output is integrated is provided.

Abstract: An optical semiconductor device includes a semiconductor substrate, a first semiconductor layer provided on the semiconductor substrate, and a mesa waveguide provided on the principal surface of the first semiconductor layer. The semiconductor device also includes a buried layer covering the upper surface of the first semiconductor layer. Part of the upper surface of the first semiconductor layer is exposed. A mesa structure provided at the boundary between a part of the first semiconductor layer is covered with the buried layer and a part of the first semiconductor layer is exposed. One side of the mesa structure is covered with the buried layer, and the other side is exposed. The optical semiconductor device can reduce the generation of stress in the buried layer, for example, to suppress the occurrence of cracks in the buried layer and enhance the reliability.

Abstract: A semiconductor laser in which a PD unit monitoring an optical output is integrated is provided.

Abstract: The object is to provide a technology capable of efficiently injecting a current into a core layer of a buried waveguide. On one end side of the substrate, a buried waveguide including a core layer, a cladding layer, and a current blocking layer is disposed, both sides of the core layer in a layer-stacking direction are sandwiched by the cladding layer, and both sides of the core layer in a width direction that is perpendicular to the layer-stacking direction are sandwiched by the current blocking layer. On another end side of the substrate, a ridge waveguide including the core layer and the cladding layer is disposed, and both sides of the core layer in the layer-stacking direction are sandwiched by the cladding layer.

Abstract: An optical semiconductor device includes a semiconductor substrate, a first semiconductor layer provided on the semiconductor substrate, and a mesa waveguide provided on the principal surface of the first semiconductor layer. The semiconductor device also includes a buried layer covering the upper surface of the first semiconductor layer. Part of the upper surface of the first semiconductor layer is exposed. A mesa structure provided at the boundary between a part of the first semiconductor layer is covered with the buried layer and a part of the first semiconductor layer is exposed. One side of the mesa structure is covered with the buried layer, and the other side is exposed. The optical semiconductor device can reduce the generation of stress in the buried layer, for example, to suppress the occurrence of cracks in the buried layer and enhance the reliability.

Abstract: The object is to provide a technology capable of efficiently injecting a current into a core layer of a buried waveguide. On one end side of the substrate, a buried waveguide including a core layer, a cladding layer, and a current blocking layer is disposed, both sides of the core layer in a layer-stacking direction are sandwiched by the cladding layer, and both sides of the core layer in a width direction that is perpendicular to the layer-stacking direction are sandwiched by the current blocking layer. On another end side of the substrate, a ridge waveguide including the core layer and the cladding layer is disposed, and both sides of the core layer in the layer-stacking direction are sandwiched by the cladding layer.

Abstract: An optical modulator element includes first and second optical modulators, an optical input terminal, and a branch coupler. Each of the first and second optical modulators includes a pair of Mach-Zehnder waveguides, a first optical coupler to split rays from the branch coupler into the pair of Mach-Zehnder waveguides, and a second optical coupler to combine rays transmitted through the pair of Mach-Zehnder waveguides. The first and second optical modulators are disposed in such a manner that a traveling direction of rays propagating through the pair of Mach-Zehnder waveguides of the first optical modulator and a traveling direction of rays propagating through the pair of Mach-Zehnder waveguides of the second optical modulator are angled toward each other.

Abstract: An optical modulator element includes first and second optical modulators, an optical input terminal, and a branch coupler. Each of the first and second optical modulators includes a pair of Mach-Zehnder waveguides, a first optical coupler to split rays from the branch coupler into the pair of Mach-Zehnder waveguides, and a second optical coupler to combine rays transmitted through the pair of Mach-Zehnder waveguides. The first and second optical modulators are disposed in such a manner that a traveling direction of rays propagating through the pair of Mach-Zehnder waveguides of the first optical modulator and a traveling direction of rays propagating through the pair of Mach-Zehnder waveguides of the second optical modulator are angled toward each other.