Patents by Inventor Yohei IKEBE

Yohei IKEBE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240103355
    Abstract: A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer that is formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer that is formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
    Type: Application
    Filed: December 4, 2023
    Publication date: March 28, 2024
    Applicant: HOYA CORPORATION
    Inventor: Yohei IKEBE
  • Publication number: 20240103354
    Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 28, 2024
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI, Takahiro ONOUE, Hirofumi KOZAKAI
  • Publication number: 20240069428
    Abstract: A reflective mask blank includes a multilayer reflective film, a first thin film, and a second thin film in this order on a main surface of a substrate, a relative reflectance R2 of the second thin film with respect to a reflectance of the multilayer reflective film in the light of 13.5 nm wavelength is 3% or more, and an extinction coefficient k1 of the first thin film in the light of 13.5 nm wavelength and a thickness d1 [nm] of the first thin film satisfy a relationship of (Formula 1). 21.5×k12×d12?52.5×k1×d1+32.
    Type: Application
    Filed: December 8, 2021
    Publication date: February 29, 2024
    Applicant: HOYA CORPORATION
    Inventor: Yohei IKEBE
  • Patent number: 11914281
    Abstract: A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: February 27, 2024
    Assignee: HOYA CORPORATION
    Inventor: Yohei Ikebe
  • Patent number: 11892768
    Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: February 6, 2024
    Assignee: HOYA CORPORATION
    Inventors: Mizuki Kataoka, Yohei Ikebe
  • Publication number: 20240036457
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
    Type: Application
    Filed: October 9, 2023
    Publication date: February 1, 2024
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Publication number: 20240036458
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
    Type: Application
    Filed: October 9, 2023
    Publication date: February 1, 2024
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Patent number: 11880130
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Grant
    Filed: September 16, 2022
    Date of Patent: January 23, 2024
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki, Takahiro Onoue, Hirofumi Kozakai
  • Patent number: 11815807
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
    Type: Grant
    Filed: November 18, 2022
    Date of Patent: November 14, 2023
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki
  • Patent number: 11815806
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
    Type: Grant
    Filed: November 18, 2022
    Date of Patent: November 14, 2023
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki
  • Publication number: 20230333459
    Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of forming a transfer pattern of diversified fine pattern shapes formed on a transferred substrate and having a transfer pattern capable of performing EUV exposure with a high throughput A reflective mask blank comprises a multilayer reflective film and an absorber film in this order on a substrate. When normalization is performed with a value of an evaluation function of a film having a refractive index of 0.95 and an extinction coefficient of 0.03 as 1, the absorber film comprises a material having such a refractive index and an extinction coefficient that a value of the normalized evaluation function of the absorber film is 1.015 or more, and the evaluation function is a product of a normalized image log slope (NILS) and a threshold of light intensity for exposure of a predetermined resist to light.
    Type: Application
    Filed: September 24, 2021
    Publication date: October 19, 2023
    Applicant: HOYA CORPORATION
    Inventor: Yohei IKEBE
  • Publication number: 20230244135
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k > ?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k < ?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Application
    Filed: September 16, 2022
    Publication date: August 3, 2023
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI, Takahiro ONOUE, Hirofumi KOZAKAI
  • Publication number: 20230168575
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
    Type: Application
    Filed: November 18, 2022
    Publication date: June 1, 2023
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Publication number: 20230087016
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
    Type: Application
    Filed: November 18, 2022
    Publication date: March 23, 2023
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Publication number: 20230076438
    Abstract: Provided is a reflective mask blank. The reflective mask blank has a multilayer reflective film and a thin film for pattern formation in this order on a main surface of a substrate; the thin film consists of a single layer structure consisting of a ruthenium-containing layer at least containing ruthenium, nitrogen, and oxygen or a multilayer structure including the ruthenium-containing layer; and when the ruthenium-containing layer is subjected to an analysis by an In-Plane measurement of an X-ray diffraction method to obtain an X-ray diffraction profile where, provided I_P1 is the maximum value of diffraction intensity within a diffraction angle 2? ranging from 65 degrees to 75 degrees and I_avg is the average value of diffraction intensity within a diffraction angle 2? ranging from 55 degrees to 65 degrees, I_P1/I_avg is greater than 1.0 and less than 3.0.
    Type: Application
    Filed: February 17, 2021
    Publication date: March 9, 2023
    Applicant: HOYA CORPORATION
    Inventors: Ikuya FUKASAWA, Yohei IKEBE
  • Patent number: 11550215
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: January 10, 2023
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki
  • Patent number: 11531264
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: December 20, 2022
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki
  • Publication number: 20220390826
    Abstract: Provided is a reflective mask blank comprising a phase shift film having a small change in the phase difference and/or reflectance of the phase shift film even in a case where the film thickness of the phase shift film changes. A reflective mask blank comprises a multilayer reflective film and a phase shift film in this order on a main surface of a substrate. The phase shift film comprises a lower layer and an uppermost layer. The lower layer is located between the uppermost layer and the multilayer reflective film. The lower layer is formed of a material in which the total content of ruthenium and chromium is 90 atomic % or more, or a material in which the total content of ruthenium, chromium, and nitrogen is 90 atomic % or more. The uppermost layer is formed of a material in which the total content of ruthenium, chromium, and oxygen is 90 atomic % or more.
    Type: Application
    Filed: October 19, 2020
    Publication date: December 8, 2022
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Osamu NOZAWA
  • Patent number: 11480867
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: October 25, 2022
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki, Takahiro Onoue, Hirofumi Kozakai
  • Publication number: 20220121102
    Abstract: Provided is a reflective mask blank that enables to further reduce the shadowing effect of a reflective mask and form a fine and highly accurate absorber pattern. The reflective mask blank comprising a multilayer reflective film, an absorber film, and an etching mask film disposed on a substrate in this order, wherein the absorber film comprises a buffer layer and an absorption layer provided on the buffer layer, the buffer layer comprises a material comprising tantalum (Ta) or silicon (Si) and a film thickness of the buffer layer is 0.5 nm or more and 25 nm or less, the absorption layer comprises a material comprising chromium (Cr) and an extinction coefficient of the absorption layer with respect to EUV light is higher than the extinction coefficient of the buffer layer with respect to the EUV light, and the etching mask film comprises a material comprising tantalum (Ta) or silicon (Si) and a film thickness of the etching mask film is 0.5 nm or more and 14 nm or less.
    Type: Application
    Filed: February 21, 2020
    Publication date: April 21, 2022
    Applicant: HOYA CORPORATION
    Inventors: Tsutomu SHOKI, Yohei IKEBE