Patents by Inventor Yohei IKEBE

Yohei IKEBE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11187972
    Abstract: The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: November 30, 2021
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki
  • Publication number: 20210311382
    Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.
    Type: Application
    Filed: August 8, 2019
    Publication date: October 7, 2021
    Applicant: HOYA CORPORATION
    Inventors: Mizuki KATAOKA, Yohei IKEBE
  • Patent number: 11131921
    Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.
    Type: Grant
    Filed: August 3, 2018
    Date of Patent: September 28, 2021
    Assignee: HOYA CORPORATION
    Inventors: Tsutomu Shoki, Kazuhiro Hamamoto, Yohei Ikebe
  • Publication number: 20210255536
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Application
    Filed: April 12, 2021
    Publication date: August 19, 2021
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI, Takahiro ONOUE, Hirofumi KOZAKAI
  • Publication number: 20210223681
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
    Type: Application
    Filed: May 24, 2019
    Publication date: July 22, 2021
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Publication number: 20210208498
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
    Type: Application
    Filed: May 24, 2019
    Publication date: July 8, 2021
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Patent number: 11003068
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: May 11, 2021
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki, Takahiro Onoue, Hirofumi Kozakai
  • Patent number: 10921705
    Abstract: Provided is a reflective mask capable of reducing out-of-band light when transferring a prescribed pattern onto a wafer by exposure using EUV light in a process of manufacturing a semiconductor device. The mask blank substrate is provided with a base film on a substrate, the base film is formed with a material having a refractive index smaller than the substrate over a wavelength range of not less than 190 nm and not more than 280 nm, and reflectance of the base film arranged on the surface of the substrate is smaller than the reflectance of the substrate over a wavelength range of not less than 190 nm to not more than 280 nm.
    Type: Grant
    Filed: November 15, 2016
    Date of Patent: February 16, 2021
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki
  • Patent number: 10871707
    Abstract: Provided is a reflective mask blank having a phase shift film for which there is little dependency of phase difference on film thickness. The reflective mask blank has a multilayer reflective film and a phase shift film, which causes a shift in the phase of EUV light, formed on a substrate in that order, wherein the phase shift film has an uppermost layer and a lower layer other than the uppermost layer and satisfies the following relationships: n2<n1<1 and ?/4×(2m+1)???n1·d1??/4×(2m+1)+?. (In the formulas, n1 represents the refractive index of the uppermost layer at an exposure wavelength of ?=13.5 nm, n2 represents the refractive index of the lower layer at an exposure wavelength of ?=13.5 nm, d1 represents the film thickness (nm) of the uppermost layer, m represents an integer of not less than 0, and ?=1.5 nm).
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: December 22, 2020
    Assignee: HOYA CORPORATION
    Inventor: Yohei Ikebe
  • Publication number: 20200371421
    Abstract: A reflective mask blank which is able to produce a reflective mask that is capable of forming a fine and highly accurate transfer pattern by further reducing the shadowing effects of the reflective mask. A reflective mask blank which sequentially comprises, on a substrate, a multilayer reflective film and an absorbent film in this order, and which is characterized in that the absorbent film is formed from a material that contains a first material which has a refractive index n of 0.99 or more for EUV light and a second material which has an extinction coefficient k of 0.035 or more for EUV light.
    Type: Application
    Filed: November 21, 2018
    Publication date: November 26, 2020
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Takahiro ONOUE
  • Publication number: 20200310239
    Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.
    Type: Application
    Filed: October 16, 2018
    Publication date: October 1, 2020
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Tsutomu SHOKI, Yohei IKEBE
  • Patent number: 10642149
    Abstract: A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 ?m×1 ?m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 ?m?1 is not more than 17 nm4.
    Type: Grant
    Filed: July 5, 2019
    Date of Patent: May 5, 2020
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Yohei Ikebe
  • Patent number: 10578961
    Abstract: The object is to provide a mask blank substrate, a mask blank, and a transfer mask which can achieve easy correction of a wavefront by a wavefront correction function of an exposure apparatus. The further object is to provide methods for manufacturing them. A virtual surface shape, which is an optically effective flat reference surface shape defined by a Zernike polynomial, is determined, wherein the Zernike polynomial is composed of only terms in which the order of variables related to a radius is second or lower order and includes one or more terms in which the order of the variables related to a radius is second-order; and the mask blank substrate, in which difference data (PV value) between the maximum value and the minimum value of difference shape between a virtual surface shape and a composite surface shape obtained by composing respective surface shapes of two main surfaces is 25 nm or less, is selected.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: March 3, 2020
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Masaru Tanabe
  • Publication number: 20190384157
    Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).
    Type: Application
    Filed: March 1, 2018
    Publication date: December 19, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Junichi HORIKAWA, Takahiro ONOUE, Mizuki KATAOKA
  • Publication number: 20190384158
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Application
    Filed: February 20, 2018
    Publication date: December 19, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI, Takahiro ONOUE, Hirofumi KOZAKAI
  • Publication number: 20190369483
    Abstract: Provided is a substrate with conductive film for fabricating a reflective mask capable of correcting misalignment of the reflective mask from the back surface with a laser beam and the like. The substrate with conductive film is formed in which a conductive film is formed on one of the main surfaces of a mask blank substrate used in lithography, wherein an intermediate layer having a stress adjustment function is provided between the substrate and the conductive film, and transmittance of a laminated film including the intermediate layer and the conductive film for light having a wavelength of 532 nm is not less than 20%.
    Type: Application
    Filed: January 16, 2018
    Publication date: December 5, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Publication number: 20190361338
    Abstract: Provided are a reflective mask blank and a reflective mask that are capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank has a multilayer reflective film and a phase shift film that causes a shift in the phase of EUV light on a substrate in that order, wherein the phase shift film comprises a single layer film or multilayer film of two or more layers and is made of a material comprising tantalum (Ta) and titanium (Ti).
    Type: Application
    Filed: January 16, 2018
    Publication date: November 28, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Patent number: 10481484
    Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: November 19, 2019
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Takahiro Onoue, Tsutomu Shoki
  • Publication number: 20190339608
    Abstract: A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 ?m×1 ?m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 ?m?1 is not more than 17 nm4.
    Type: Application
    Filed: July 5, 2019
    Publication date: November 7, 2019
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Yohei IKEBE
  • Publication number: 20190265585
    Abstract: The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
    Type: Application
    Filed: October 18, 2017
    Publication date: August 29, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI