Abstract: A mask blank comprises a substrate with a multilayer reflective film and a pattern-forming thin film formed on a main surface of the substrate in this order. The thin film contains tantalum, molybdenum, and nitrogen. In the thin film, a ratio of a nitrogen content [atomic %] to a total content [atomic %] of tantalum and molybdenum is 0.15 or more.

Abstract: [Problem] Provided is a mask blank [Solution] A mask blank comprises a multilayer reflective film and a pattern forming thin film in this order on a main surface of a substrate. The thin film is made of a material containing a metal, and when a refractive index of the thin film with respect to light having a wavelength ?L of 13.2 nm is represented by nL, a refractive index of the thin film with respect to light having a wavelength ?M of 13.5 nm is represented by nM, a refractive index of the thin film with respect to light having a wavelength ?H of 13.8 nm is represented by nH, and a coefficient P=[(1?nH)/?H?(1?nL)/?L)]/[(1?nM)/?M] is satisfied, an absolute value of the coefficient P is 0.09 or less.

Abstract: A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer that is formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer that is formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.

Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.

Abstract: A reflective mask blank includes a multilayer reflective film, a first thin film, and a second thin film in this order on a main surface of a substrate, a relative reflectance R2 of the second thin film with respect to a reflectance of the multilayer reflective film in the light of 13.5 nm wavelength is 3% or more, and an extinction coefficient k1 of the first thin film in the light of 13.5 nm wavelength and a thickness d1 [nm] of the first thin film satisfy a relationship of (Formula 1). 21.5×k12×d12?52.5×k1×d1+32.

Abstract: A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.

Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of forming a transfer pattern of diversified fine pattern shapes formed on a transferred substrate and having a transfer pattern capable of performing EUV exposure with a high throughput A reflective mask blank comprises a multilayer reflective film and an absorber film in this order on a substrate. When normalization is performed with a value of an evaluation function of a film having a refractive index of 0.95 and an extinction coefficient of 0.03 as 1, the absorber film comprises a material having such a refractive index and an extinction coefficient that a value of the normalized evaluation function of the absorber film is 1.015 or more, and the evaluation function is a product of a normalized image log slope (NILS) and a threshold of light intensity for exposure of a predetermined resist to light.

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k > ?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k < ?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

Abstract: Provided is a reflective mask blank. The reflective mask blank has a multilayer reflective film and a thin film for pattern formation in this order on a main surface of a substrate; the thin film consists of a single layer structure consisting of a ruthenium-containing layer at least containing ruthenium, nitrogen, and oxygen or a multilayer structure including the ruthenium-containing layer; and when the ruthenium-containing layer is subjected to an analysis by an In-Plane measurement of an X-ray diffraction method to obtain an X-ray diffraction profile where, provided I_P1 is the maximum value of diffraction intensity within a diffraction angle 2? ranging from 65 degrees to 75 degrees and I_avg is the average value of diffraction intensity within a diffraction angle 2? ranging from 55 degrees to 65 degrees, I_P1/I_avg is greater than 1.0 and less than 3.0.

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

Abstract: Provided is a reflective mask blank comprising a phase shift film having a small change in the phase difference and/or reflectance of the phase shift film even in a case where the film thickness of the phase shift film changes. A reflective mask blank comprises a multilayer reflective film and a phase shift film in this order on a main surface of a substrate. The phase shift film comprises a lower layer and an uppermost layer. The lower layer is located between the uppermost layer and the multilayer reflective film. The lower layer is formed of a material in which the total content of ruthenium and chromium is 90 atomic % or more, or a material in which the total content of ruthenium, chromium, and nitrogen is 90 atomic % or more. The uppermost layer is formed of a material in which the total content of ruthenium, chromium, and oxygen is 90 atomic % or more.