Abstract: Method for manufacturing semiconductor light-emitting device having a substrate, a metal layer over the substrate, and a semiconductor layer over the metal layer. The semiconductor layer includes a light-emitting layer, and with respect to the light-emitting layer, a first conductivity type layer at a substrate side and a second conductivity type layer opposite the substrate. The second conductivity type layer includes a first layer forming a semiconductor layer surface and a second layer at the substrate side with respect to the first layer.

Abstract: An LED board includes a flexible printed circuit and multiple LED-mounted parts arrayed on the circuit board at regular intervals in a constant direction. The LED-mounted parts each include multiple LEDs. The circuit board includes LED portions including the LED-mounted parts and non-LED portions including no LED-mounted parts that are arrayed alternately. The LED-mounted parts each have, in an array direction in which the LED-mounted parts are arrayed, a dimension equal to an interval between adjacent LED-mounted parts of the arrayed LED-mounted parts. A surface emitter includes multiple LED boards fitted together, with LED-mounted parts on each LED board overlapping non-LED portions of an adjacent LED board of the LED boards. The LED board and the surface emitter with the above structures easily upsize a video display device.

Abstract: Method for manufacturing semiconductor light-emitting device having a substrate, a metal layer over the substrate, and a semiconductor layer over the metal layer. The semiconductor layer includes a light-emitting layer, and with respect to the light-emitting layer, a first conductivity type layer at a substrate side and a second conductivity type layer opposite the substrate. The second conductivity type layer includes a first layer forming a semiconductor layer surface and a second layer at the substrate side with respect to the first layer.

Abstract: A cleaning device includes: a cleaning member that comes into contact with a nozzle surface of a head unit that forms an image on a recording medium by an inkjet head, the cleaning member cleaning an ink remaining on the nozzle surface; a winding part that winds the cleaning member so that an unused part of the cleaning member comes in contact with the nozzle surface; and a hardware processor that controls the winding part to change a winding amount of the cleaning member according to an amount of ink to be cleaned by the cleaning member.

Abstract: There is provided a semiconductor light emitting device, including: a first electrode; a substrate formed over the first electrode; a metal layer formed over the substrate; a semiconductor layer formed over the metal layer and including a light-emitting layer, a first conductivity type layer disposed at a substrate side with respect to the light-emitting layer and a second conductivity type layer disposed at an opposite side to the substrate with respect to the light-emitting layer; and a second electrode formed over the second conductivity type layer.

Abstract: An inkjet recording apparatus includes an inkjet head that ejects ink from a nozzle; and a cloth wipe unit that includes a woven cloth that wipes a nozzle surface in which an ejecting opening of the nozzle of the inkjet head is open. The ink attached to the nozzle surface is wiped by a relative sliding movement between the woven cloth and the nozzle surface. A mountain portion formed on a surface by a thread passing above a crossed thread of the woven cloth rubs against all of the ejecting openings during the sliding.

Abstract: A metal belt manufacturing method includes: a step of inserting a retention member (30, 130) in an ended band shape into a clearance between an outer peripheral surface (12) of a ring (10) and an inner surface of a visor portion (23) which faces a base portion (21) in a recessed portion (25) and disposing the retention member (30, 130) circumferentially along the outer peripheral surface (12) of the ring (10); and a step of coupling the starting end portion and the terminal end portion of the retention member (30, 130) in an ended band shape to each other.

Abstract: A semiconductor light-emitting device includes a semiconductor layer, having a major surface and generating light, a light transmitting layer, having alight transmitting property and covering the major surface of the semiconductor layer, a light reflecting layer, having a light reflecting property and covering the light transmitting layer, and a bonding material diffusion region, formed in a surface layer portion of the light reflecting layer in a boundary portion between the light transmitting layer and the light reflecting layer and having an element having a property of being high in adhesion force with respect to the light transmitting layer more so than an element constituting the light reflecting layer.

Abstract: An inkjet recording apparatus includes an ink ejection head that includes an ink ejector with a nozzle to which ink is supplied, a hardware processor that causes the ink ejector to perform an ejecting action of ejecting ink from the nozzle and/or an projecting action of projecting ink from an opening of the nozzle, and a wiping unit that performs a wiping action of wiping a nozzle opening surface of the ink ejection head, the opening of the nozzle being formed on the nozzle opening surface. The hardware processor controls an operation of the ink ejector so as to cause the ink ejector to perform the ejecting action and/or the projecting action at a timing according to a wiping position of the wiping unit during the wiping action of the wiping unit.

Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.

Abstract: According to one embodiment, a solid-state imaging device includes a substrate, a light receiving pixel, a first interconnection layer, a light shielding layer, and a first metal film. The substrate includes a sensor region and a circuit region. The light receiving pixel is provided on a surface of the sensor region of the substrate. The first interconnection layer is provided in the sensor region. The light shielding layer is provided in the sensor region and has a larger width than the first interconnection. The first metal film is provided on at least one of an upper surface or a lower surface of the light shielding layer. The first metal film partially covers at least one of the upper surface or the lower surface.

Abstract: A color material dispersion liquid comprising: (A) a color material, (B) a dispersant and (C) a solvent, wherein the color material (A) contains a lake color material of a combination of an acid dye and a polyaluminum chloride; a basicity of the polyaluminum chloride is 70% or more; and a value of a ratio (I4/I6) between an integral value (I4) of a peak corresponding to a four-coordinate aluminum in a solid-state 27Al-NMR spectrum of the lake color material and an integral value (I6) a peak corresponding to a six-coordinate aluminum therein, is from 0 to 0.50.

Abstract: There is provided a semiconductor light emitting device, including: a first electrode; a substrate formed over the first electrode; a metal layer formed over the substrate; a semiconductor layer formed over the metal layer and including a light-emitting layer, a first conductivity type layer disposed at a substrate side with respect to the light-emitting layer and a second conductivity type layer disposed at an opposite side to the substrate with respect to the light-emitting layer; and a second electrode formed over the second conductivity type layer.

Abstract: According to one embodiment, a solid-state imaging device includes a substrate, a light receiving pixel, a first interconnection layer, a light shielding layer, and a first metal film. The substrate includes a sensor region and a circuit region. The light receiving pixel is provided on a surface of the sensor region of the substrate. The first interconnection layer is provided in the sensor region. The light shielding layer is provided in the sensor region and has a larger width than the first interconnection. The first metal film is provided on at least one of an upper surface or a lower surface of the light shielding layer. The first metal film partially covers at least one of the upper surface or the lower surface.

Abstract: Provided is a method for manufacturing an endless metal ring for a continuously variable transmission using a transmission belt formed by binding a plurality of elements with the ring. A tubular body is cut into a plurality of ring bodies, and under tension, the ring body is rotated in a circumferential direction, and a grinding wheel is pressed against a lateral end of the ring body from an outer toward an inner peripheral side of the ring body to remove an edge portion on the outer peripheral side of the lateral end of the ring body formed by the cutting, and a grinding wheel is pressed against the lateral end of the ring body from the inner toward the outer peripheral side of the ring body to remove an edge portion on the inner peripheral side of the lateral end of the ring body formed by the cutting.

Abstract: In a method for cleaning a portion to be welded in which a first portion (Pa) to be welded and a second portion (Pb) to be welded, which are to be joined by butt welding, are cleaned, the first and second portions (Pa, Ph) to be welded are cleaned before the butt welding by injecting, with the first and second portions (Pa, Pb) to be welded abutting on each other, plasma produced from a gas containing oxygen into a groove between the first portion (Pa) to be welded and the second portion Pb) to be welded.

Abstract: A semiconductor light-emitting device includes a semiconductor layer, having a major surface and generating light, a light transmitting layer, having alight transmitting property and covering the major surface of the semiconductor layer, a light reflecting layer, having a light reflecting property and covering the light transmitting layer, and a bonding material diffusion region, formed in a surface layer portion of the light reflecting layer in a boundary portion between the light transmitting layer and the light reflecting layer and having an element having a property of being high in adhesion force with respect to the light transmitting layer more so than an element constituting the light reflecting layer.

Abstract: A transport member, that transports a developer by rotating in a rotation direction that is predetermined around a rotation axis, includes: a shaft part including the rotation axis; and a blade part spirally provided on an outer peripheral surface of the shaft part, wherein the blade part includes a transport surface that is a surface facing a downstream side in a transport direction of the developer along the rotation axis, and a non-transport surface that is a surface other than the transport surface, and the transport member further includes a fin protruding from the non-transport surface of the blade part, the fin being provided with an interval from the outer peripheral surface of the shaft part.

Abstract: An image forming apparatus includes an image former which forms an image on an image carrying member with toner stored in a storage, a toner supplier which supplies toner to the storage by driving a conveyance member, a density measurer which causes the image former to form an image having a predetermined density at a predetermined timing and measures density of the formed image, a corrector which corrects a driving amount of the conveyance member based on the density measured by the density measurer, and a changer which changes a timing when the density measurer measures the density in response to an event that a predetermined condition is satisfied.

Abstract: The present invention provides a semiconductor light emitting device with a simple structure and capable of improving light extraction efficiency. The semiconductor light emitting device 1 includes a substrate 2, a metal layer 3 on the substrate 2, a light-transmitting conductive layer 4 on the metal layer 3, an insulation layer 30 on the light-transmitting conductive layer 4, and a III-V semiconductor structure 5 on the insulation layer 30. The III-V semiconductor structure 5 includes a light emitting layer 8, a p-type semiconductor layer 9, and an n-type semiconductor layer 10. A refractive index n1 of a p-type GaP contact layer 11 of the p-type semiconductor layer 9, a refractive index n2 of the insulation layer 30, and a refractive index n3 of the light-transmitting conductive layer 4 satisfy the relation: n1>n2<n3.