Patents by Inventor Yohei Kinoshita
Yohei Kinoshita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7723007Abstract: The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition.Type: GrantFiled: January 28, 2005Date of Patent: May 25, 2010Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Toshiyuki Ogata, Syogo Matsumaru, Yohei Kinoshita, Hideo Hada, Daiju Shiono, Hiroaki Shimizu, Naotaka Kubota
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Publication number: 20100040970Abstract: A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a1) represented by general formula (I) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R1? represents a hydrogen atom or a lower alkyl group; n represents an integer of 0 to 3; R1 represents a lower alkyl group, a fluorine atom, or a fluorinated lower alkyl group; and p represents an integer of 0 to 2.Type: ApplicationFiled: August 7, 2007Publication date: February 18, 2010Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yohei Kinoshita, Takeshi Iwai, Toshiyuki Ogata
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Patent number: 7608381Abstract: The positive resist composition of the present invention is a polymer compound comprising at least one constituent unit (a1) selected from the group consisting of constituent units represented by the following general formulas (1) and (1)?, a constituent unit (a2) derived from an (?-lower alkyl)acrylate ester having a lactone-containing monocycle or a polycyclic group, and a constituent unit (a3) which is a constituent unit other than the constituent unit (a1) and the constituent unit (a2) and is derived from an (?-lower alkyl)acrylate ester which has an aliphatic cyclic group-containing non-acid dissociable dissolution inhibiting group and does not have a polar group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group having 20 or less carbon atoms, or a fluorinated lower alkyl group having 20 or less carbon atoms, R1 represents at most 20-membered cyclic group which may have a substituent, n represents 0 or an integer of 1 to 5, and m represents 0 or 1.Type: GrantFiled: June 10, 2005Date of Patent: October 27, 2009Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yohei Kinoshita, Takeshi Iwai
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Publication number: 20090098483Abstract: A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained.Type: ApplicationFiled: April 7, 2006Publication date: April 16, 2009Applicant: TOKYO OHA KOGYO CO., LTD.Inventors: Yohei Kinoshita, Makiko Irie, Waki Ohkubo, Yusuke Nakagawa, Shinichi Hidesaka
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Publication number: 20090068583Abstract: A positive resist composition includes a resin component (A), and an acid generator component (B) which generates an acid upon exposure and includes an acid generator (B1) represented by general formula (B1): (wherein R51 represents a straight chain, branched chain, or cyclic alkyl group, or a straight chain, branched chain, or cyclic fluorinated alkyl group; R52 represents a hydrogen atom, a hydroxyl group, a halogen atom, a straight chain, branched chain, or cyclic alkyl group, a straight chain or branched chain halogenated alkyl group, or a straight chain or branched chain alkoxy group; R53 represents an aryl group which may include a substituent; and n represents an integer from 1 to 3).Type: ApplicationFiled: April 7, 2006Publication date: March 12, 2009Applicant: TOKYO OHKA KOGYO CO., LTD.Inventor: Yohei Kinoshita
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Publication number: 20090068588Abstract: A positive resist composition that includes a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure to radiation, wherein the component (A) includes a structural unit (a1) represented by a general formula (a1-2) or (a1-4), a structural unit (a2) derived from an acrylate ester that contains a lactone-containing monocyclic or polycyclic group, and a structural unit (a3), which is different from the structural unit (a1) and the structural unit (a2), and is derived from an acrylate ester that contains an aliphatic cyclic group-containing non-acid-dissociable, dissolution-inhibiting group and contains no polar groups, and the component (B) includes an onium salt (B1) having an anion portion represented by a formula: R41—SO3?.Type: ApplicationFiled: December 13, 2005Publication date: March 12, 2009Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Yohei Kinoshita, Isao Hirano
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Publication number: 20090035698Abstract: The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below [wherein, R11 represents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; R12 to R13 each represents, independently, an aryl group or the alkyl group that may have substituent group; n? represents either 0 or an integer from 1 to 3].Type: ApplicationFiled: April 18, 2006Publication date: February 5, 2009Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Yohei Kinoshita, Waki Ohkubo, Yusuke Nakagawa, Shinichi Hidesaka, Makiko Irie
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Publication number: 20080166655Abstract: The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition.Type: ApplicationFiled: January 28, 2005Publication date: July 10, 2008Inventors: Toshiyuki Ogata, Syogo Matsumaru, Yohei Kinoshita, Hideo Hada, Daiju Shiono, Hiroaki Shimizu, Naotaka Kubota
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Publication number: 20080096126Abstract: The positive resist composition of the present invention is a polymer compound comprising at least one constituent unit (a1) selected from the group consisting of constituent units represented by the following general formulas (1) and (1)?, a constituent unit (a2) derived from an (?-lower alkyl)acrylate ester having a lactone-containing monocycle or a polycyclic group, and a constituent unit (a3) which is a constituent unit other than the constituent unit (a1) and the constituent unit (a2) and is derived from an (?-lower alkyl)acrylate ester which has an aliphatic cyclic group-containing non-acid dissociable dissolution inhibiting group and does not have a polar group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group having 20 or less carbon atoms, or a fluorinated lower alkyl group having 20 or less carbon atoms, R1 represents at most 20-membered cyclic group which may have a substituent, n represents 0 or an integer of 1 to 5, and m represents 0 or 1.Type: ApplicationFiled: June 10, 2005Publication date: April 24, 2008Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Yohei Kinoshita, Takeshi Iwai
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Patent number: 6818380Abstract: The invention discloses an improvement in the photolithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.Type: GrantFiled: October 6, 2003Date of Patent: November 16, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta, Katsumi Oomori, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada
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Patent number: 6777158Abstract: The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.Type: GrantFiled: August 28, 2001Date of Patent: August 17, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta, Katsumi Oomori, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada
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Publication number: 20040067615Abstract: The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.Type: ApplicationFiled: October 6, 2003Publication date: April 8, 2004Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta, Katsumi Oomori, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada
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Patent number: 6630282Abstract: The invention discloses a chemical-amplification positive-working photoresist composition of the crosslinked type used for photolithographic patterning works in the manufacture of electronic devices. While the composition comprises a film-forming resinous ingredient capable of being imparted with increased alkali-solubility in the presence of an acid and a radiation-sensitive acid-generating compound, optionally, with further admixture of an aliphatic amine compound and an acid compound, the inventive photoresist composition is characterized by the unique resinous ingredient which consists of four types of monomeric units including hydroxystyrene units, styrene units, monomeric units having acid-dissociable solubility-reducing groups and crosslinking units. The acid-dissociable solubility-reducing group is not conventional tert-butoxycarbonyloxy group but characteristically a 1-alkylcyclohexyl group or a polycyclic saturated aliphatic hydrocarbon group.Type: GrantFiled: August 14, 2001Date of Patent: October 7, 2003Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Katsumi Oomori, Yohei Kinoshita, Tomotaka Yamada, Toshikazu Takayama
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Patent number: 6485887Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition used in the photolithographic patterning works in the manufacture of semiconductor devices capable of giving an excellently patterned resist layer with remarkably small film thickness reduction by the development treatment with an aqueous alkaline developer solution in the areas unexposed to patternwise exposure to light. Characteristically, the resinous ingredient in the composition, which is formulated in combination with a radiation-sensitive acid-generating agent and imparted with an increase in the solubility in an alkaline developer solution, is a ternary copolymeric resin consisting of the monomeric units of (a) hydroxystyrene units, (b) styrene units and (c) 1-alkylcyclohexyl (meth)acrylate units each in a specified molar fraction.Type: GrantFiled: September 13, 2001Date of Patent: November 26, 2002Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Katsumi Oomori, Hiroto Yukawa, Akiyoshi Yamazaki, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada
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Publication number: 20020045133Abstract: The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.Type: ApplicationFiled: August 28, 2001Publication date: April 18, 2002Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta, Katsumi Oomori, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada
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Publication number: 20020034704Abstract: The invention discloses a chemical-amplification positive-working photoresist composition of the crosslinked type used for photolithographic patterning works in the manufacture of electronic devices. While the composition comprises a film-forming resinous ingredient capable of being imparted with increased alkali-solubility in the presence of an acid and a radiation-sensitive acid-generating compound, optionally, with further admixture of an aliphatic amine compound and an acid compound, the inventive photoresist composition is characterized by the unique resinous ingredient which consists of four types of monomeric units including hydroxystyrene units, styrene units, monomeric units having acid-dissociable solubility-reducing groups and crosslinking units. The acid-dissociable solubility-reducing group is not conventional tert-butoxycarbonyloxy group but characteristically a 1-alkylcyclohexyl group or a polycyclic saturated aliphatic hydrocarbon group.Type: ApplicationFiled: August 14, 2001Publication date: March 21, 2002Inventors: Katsumi Oomori, Yohei Kinoshita, Tomotaka Yamada, Toshikazu Takayama
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Publication number: 20020031722Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition used in the photolithographic patterning works in the manufacture of semiconductor devices capable of giving an excellently patterned resist layer with remarkably small film thickness reduction by the development treatment with an aqueous alkaline developer solution in the areas unexposed to patternwise exposure to light. Characteristically, the resinous ingredient in the composition, which is formulated in combination with a radiation-sensitive acid-generating agent and imparted with an increase in the solubility in an alkaline developer solution, is a ternary copolymeric resin consisting of the monomeric units of (a) hydroxystyrene units, (b) styrene units and (c) 1-alkylcyclohexyl (meth)acrylate units each in a specified molar fraction.Type: ApplicationFiled: September 13, 2001Publication date: March 14, 2002Inventors: Katsumi Oomori, Hiroto Yukawa, Akiyoshi Yamazaki, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada
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Patent number: 6340553Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition used in the photolithographic patterning works in the manufacture of semiconductor devices capable of giving an excellently patterned resist layer with remarkably small film thickness reduction by the development treatment with an aqueous alkaline developer solution in the areas unexposed to patternwise exposure to light. Characteristically, the resinous ingredient in the composition, which is formulated in combination with a radiation-sensitive acid-generating agent and imparted with an increase in the solubility in an alkaline developer solution, is a ternary copolymeric resin consisting of the monomeric units of (a) hydroxystyrene units, (b) styrene units and (c) 1-alkylcyclohexyl (meth)acrylate units each in a specified molar fraction.Type: GrantFiled: June 2, 2000Date of Patent: January 22, 2002Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Katsumi Oomori, Hiroto Yukawa, Akiyoshi Yamazaki, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada