Abstract: The present invention relates to an organoruthenium compound raw material for a chemical deposition method. An organoruthenium compound is represented by the following Formula 1 in which a trimethylenemethane-based ligand (L1), and two carbonyl ligands and a ligand X coordinate to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand (L1) is represented by the following Formula 2. Besides, the ligand X is any one of an isocyanide ligand, a pyridine ligand, an amine ligand, an imidazole ligand, a pyridazine ligand, a pyrimidine ligand, and a pyrazine ligand. wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention relates to a ruthenium thin film-forming method for forming a ruthenium thin film using a ruthenium precursor, in which tricarbonyl (?4-methylene-1,3-propanediyl) ruthenium ((CO)3Ru-TMM)) having a structure represented by the following formula 1 is used as the ruthenium precursor, and the method includes a stage of forming a ruthenium thin film by an atomic layer deposition at a temperature ranging from 200° C. to 350° C. using this ruthenium precursor and a reaction gas. As the reaction gas, one or more selected from the group consisting of oxygen, hydrogen, water and ammonia are preferably applied.