Abstract: A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Abstract: A method of manufacturing a semiconductor device includes: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.

Abstract: A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Abstract: A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Abstract: A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Abstract: A method of manufacturing a semiconductor device includes: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole 18, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.

Abstract: High frequency electrical discharge or nonpolar discharge using microwaves is generated in a gas that is introduced into a gas duct formed by a dielectric material, such as glass or ceramic. Surface treatment is applied to the components, which are under atmospheric pressure, by exposing them to the gas flow containing the active species generated by the above mentioned electrical discharge. Components are soldered before, during, or after the application of this surface treatment. The surface of the components is exposed to the active species by either directly exposing the components to the electrical discharge, or by blasting the reactive gas flow containing the active species at them. By selecting an appropriate gas for generating the active species, it is possible to improve the wettability of the surface of the component to be soldered, or to remove the organic substances or the oxide film.

Abstract: High frequency electrical discharge or nonpolar discharge using microwaves is generated in a gas that is introduced into a gas duct formed by a dielectric material, such as glass or ceramic. Surface treatment is applied to components, which are under atmospheric pressure, by exposing them to the gas flow containing the active species generated by the above mentioned electrical discharge. The components are soldered before, during, or after the application of this surface treatment. The surface of the components is exposed to the active species by either directly exposing the components to the electrical discharge, or by directing the reactive gas flow containing the active species at the component surfaces. By selecting an appropriate gas for generating the active species, it is possible to improve the wettability of the surface of the component to be soldered, or to remove organic substances or oxide film surfaces.