Abstract: An alternating stack of insulating layers and spacer material layers is formed over a substrate. At least one dielectric material portion is formed over the substrate adjacent to the alternating stack. Memory stack structures are formed through the alternating stack. A trench extending through the alternating stack and a via cavity extending through the at least one dielectric material portion are formed using a same anisotropic etch process. The via cavity is deeper than the trench and the via cavity extends into an upper portion of the substrate. The sacrificial material layers are replaced with electrically conductive layers using the trench as a conduit for an etchant and a reactant. A trench fill structure is formed in the trench, and a via structure assembly is formed in the via cavity using simultaneous deposition of material portions. A bonding pad may be formed on the bottom surface of the via structure assembly.

Abstract: First memory openings are formed through a first alternating stack of first insulating layers and first spacer material layers. Each first memory opening is filled with a first memory film, a sacrificial dielectric liner, and a first-tier opening fill material portion. Second memory openings are formed through a second alternating stack of second insulating layers and second spacer material layers. A second memory film is formed in each second memory opening. The first-tier opening fill material portions are removed selective to the sacrificial dielectric liners. The sacrificial dielectric liners are removed selective to the second memory films and the first memory films. A vertical semiconductor channel can be formed on each vertical stack of a first memory film and a second memory film.

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a substrate. At least one dielectric material portion is formed over the substrate adjacent to the alternating stack. Memory stack structures are formed through the alternating stack. A trench extending through the alternating stack and a via cavity extending through the at least one dielectric material portion are formed using a same anisotropic etch process. The via cavity is deeper than the trench and the via cavity extends into an upper portion of the substrate. The sacrificial material layers are replaced with electrically conductive layers using the trench as a conduit for an etchant and a reactant. A trench fill structure is formed in the trench, and a via structure assembly is formed in the via cavity using simultaneous deposition of material portions. A bonding pad may be formed on the bottom surface of the via structure assembly.

Abstract: A etch stop semiconductor rail is formed within a source semiconductor layer. A laterally alternating stack of dielectric rails and sacrificial semiconductor rails is formed over the source semiconductor layer and the etch stop semiconductor rail. After formation of a vertically alternating stack of insulating layers and spacer material layers, memory stack structures are formed through the vertically alternating stack and through interfaces between the sacrificial semiconductor rails and the dielectric rails. A backside trench is formed through the vertically alternating stack employing the etch stop semiconductor rail as an etch stop structure. Source strap rails providing lateral electrical contact to semiconductor channels of the memory stack structures are formed by replacement of sacrificial semiconductor rails with source strap rails.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a horizontal layer, which can be formed over a lower-interconnect-level dielectric material layer overlying a substrate. Structural integrity of insulating layers vertically spaced from one another by backside recesses during replacement of sacrificial material layers with electrically conductive layers can be enhanced by forming electrically inactive laterally-insulated support structures concurrently with formation of laterally-insulated conductive via structures that vertically extend through each layer in the alternating stack and through the horizontal layer and to lower-interconnect-level metal interconnect structures. Alternatively or additionally, the structural integrity of insulating layers during the replacement process can be enhanced by M×N array of semiconductor-containing support structures that extend through staircase region and having same materials as memory stack structures.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a horizontal layer, which can be formed over a lower-interconnect-level dielectric material layer overlying a substrate. Structural integrity of insulating layers vertically spaced from one another by backside recesses during replacement of sacrificial material layers with electrically conductive layers can be enhanced by forming electrically inactive laterally-insulated support structures concurrently with formation of laterally-insulated conductive via structures that vertically extend through each layer in the alternating stack and through the horizontal layer and to lower-interconnect-level metal interconnect structures. Alternatively or additionally, the structural integrity of insulating layers during the replacement process can be enhanced by M×N array of semiconductor-containing support structures that extend through staircase region and having same materials as memory stack structures.

Abstract: A etch stop semiconductor rail is formed within a source semiconductor layer. A laterally alternating stack of dielectric rails and sacrificial semiconductor rails is formed over the source semiconductor layer and the etch stop semiconductor rail. After formation of a vertically alternating stack of insulating layers and spacer material layers, memory stack structures are formed through the vertically alternating stack and through interfaces between the sacrificial semiconductor rails and the dielectric rails. A backside trench is formed through the vertically alternating stack employing the etch stop semiconductor rail as an etch stop structure. Source strap rails providing lateral electrical contact to semiconductor channels of the memory stack structures are formed by replacement of sacrificial semiconductor rails with source strap rails.

Abstract: Sacrificial semiconductor material portions are connected by a sacrificial semiconductor line extending along a different horizontal direction and protruding into an underlying source conductive layer. After formation of a vertically alternating stack of insulating layers and spacer material layers, memory stack structures are formed through the vertically alternating stack and through the sacrificial semiconductor material portions. A backside trench can be formed through the vertically alternating stack employing the sacrificial semiconductor line as an etch stop structure. Source strap material portions providing lateral electrical contact to semiconductor channels of the memory stack structures can be formed by replacement of sacrificial semiconductor material portions and the sacrificial semiconductor line with source strap material portions. Structural-reinforcement portions may be employed to provide structural stability during the replacement process.

Abstract: A etch stop semiconductor rail is formed within a source semiconductor layer. A laterally alternating stack of dielectric rails and sacrificial semiconductor rails is formed over the source semiconductor layer and the etch stop semiconductor rail. After formation of a vertically alternating stack of insulating layers and spacer material layers, memory stack structures are formed through the vertically alternating stack and through interfaces between the sacrificial semiconductor rails and the dielectric rails. A backside trench is formed through the vertically alternating stack employing the etch stop semiconductor rail as an etch stop structure. Source strap rails providing lateral electrical contact to semiconductor channels of the memory stack structures are formed by replacement of sacrificial semiconductor rails with source strap rails.

Abstract: Sacrificial semiconductor material portions are connected by a sacrificial semiconductor line extending along a different horizontal direction and protruding into an underlying source conductive layer. After formation of a vertically alternating stack of insulating layers and spacer material layers, memory stack structures are formed through the vertically alternating stack and through the sacrificial semiconductor material portions. A backside trench can be formed through the vertically alternating stack employing the sacrificial semiconductor line as an etch stop structure. Source strap material portions providing lateral electrical contact to semiconductor channels of the memory stack structures can be formed by replacement of sacrificial semiconductor material portions and the sacrificial semiconductor line with source strap material portions. Structural-reinforcement portions may be employed to provide structural stability during the replacement process.

Abstract: A etch stop semiconductor rail is formed within a source semiconductor layer. A laterally alternating stack of dielectric rails and sacrificial semiconductor rails is formed over the source semiconductor layer and the etch stop semiconductor rail. After formation of a vertically alternating stack of insulating layers and spacer material layers, memory stack structures are formed through the vertically alternating stack and through interfaces between the sacrificial semiconductor rails and the dielectric rails. A backside trench is formed through the vertically alternating stack employing the etch stop semiconductor rail as an etch stop structure. Source strap rails providing lateral electrical contact to semiconductor channels of the memory stack structures are formed by replacement of sacrificial semiconductor rails with source strap rails.