Patents by Inventor Yohei Monma
Yohei Monma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8137417Abstract: An object is to eliminate electric discharge due to static electricity generated by peeling when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element. A substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers. The film is bent along a curved surface of the pressurization roller on a side of the pressurization rollers, where the film is collected, and accordingly, peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film.Type: GrantFiled: September 21, 2007Date of Patent: March 20, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Patent number: 8138589Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.Type: GrantFiled: September 28, 2010Date of Patent: March 20, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yohei Monma, Daiki Yamada, Hidekazu Takahashi, Yuusuke Sugawara, Kazuo Nishi
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Publication number: 20120045861Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: ApplicationFiled: October 31, 2011Publication date: February 23, 2012Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo EGUCHI, Yohei MONMA, Atsuhiro TANI, Misako HIROSUE, Kenichi HASHIMOTO, Yasuharu HOSAKA
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Publication number: 20120044445Abstract: The object can be achieved by the following structure. A material whose value of fracture toughness is greater than or equal to 1.5 [MPa·m1/2] is used for a base substrate and a counter substrate which hold a liquid crystal material therebetween; a first sealant containing liquid crystal contaminants at less than or equal to 1×10?4 wt % is provided so as be in contact with the liquid crystal material and to surround the liquid crystal material seamlessly; the second sealant is provided to surround the first sealant; and the base substrate and the counter substrate which hold the liquid crystal material therebetween using the first sealant and the second sealant are bonded with a bond strength of greater than or equal to 1 [N/mm2].Type: ApplicationFiled: August 11, 2011Publication date: February 23, 2012Inventors: Yohei MONMA, Hiroki ADACHI, Shingo EGUCHI, Saki OBANA, Koji MORIYA, Shuji FUKAI
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Publication number: 20120021540Abstract: A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.Type: ApplicationFiled: September 24, 2011Publication date: January 26, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hidekazu TAKAHASHI, Daiki YAMADA, Yohei MONMA, Takahiro IGUCHI, Hiroki ADACHI, Shunpei YAMAZAKI
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Patent number: 8058083Abstract: It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.Type: GrantFiled: November 17, 2009Date of Patent: November 15, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yoshiaki Oikawa, Masahiro Katayama, Ami Nakamura, Yohei Monma
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Patent number: 8048770Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: GrantFiled: September 10, 2008Date of Patent: November 1, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Patent number: 8049292Abstract: A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.Type: GrantFiled: March 16, 2009Date of Patent: November 1, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Takahashi, Daiki Yamada, Yohei Monma, Takahiro Iguchi, Hiroki Adachi, Shunpei Yamazaki
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Patent number: 8048777Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: GrantFiled: September 21, 2007Date of Patent: November 1, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Patent number: 8043936Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: GrantFiled: September 10, 2008Date of Patent: October 25, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka
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Patent number: 7897483Abstract: Objects are to reduce damage to a semiconductor integrated circuit by external stress and to increase the manufacturing yield of a thinned semiconductor integrated circuit. A single crystal semiconductor layer separated from a single crystal semiconductor substrate is used for a semiconductor element included in the semiconductor integrated circuit. Moreover, a substrate which is formed into a thin shape and provided with the semiconductor integrated circuit is covered with a resin layer. In a separation step, a groove for separating a semiconductor element layer is formed in the supporting substrate, and a resin layer is provided over the supporting substrate in which the groove is formed. After that, the resin layer and the supporting substrate are cut in the groove so as to be divided into a plurality of semiconductor integrated circuits.Type: GrantFiled: December 19, 2008Date of Patent: March 1, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hidekazu Takahashi, Daiki Yamada, Yohei Monma, Hiroki Adachi
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Publication number: 20110012218Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.Type: ApplicationFiled: September 28, 2010Publication date: January 20, 2011Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yohei MONMA, Daiki YAMADA, Hidekazu TAKAHASHI, Yuusuke SUGAWARA, Kazuo NISHI
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Patent number: 7824950Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.Type: GrantFiled: March 27, 2008Date of Patent: November 2, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yohei Monma, Daiki Yamada, Hidekazu Takahashi, Yuusuke Sugawara, Kazuo Nishi
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Publication number: 20100124795Abstract: It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.Type: ApplicationFiled: November 17, 2009Publication date: May 20, 2010Inventors: Shingo Eguchi, Yoshiaki Oikawa, Masahiro Katayama, Ami Nakamura, Yohei Monma
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Publication number: 20090267173Abstract: A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.Type: ApplicationFiled: March 16, 2009Publication date: October 29, 2009Inventors: Hidekazu Takahashi, Daiki Yamada, Yohei Monma, Takahiro Iguchi, Hiroki Adachi, Shunpei Yamazaki
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Publication number: 20090194154Abstract: An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface.Type: ApplicationFiled: January 23, 2009Publication date: August 6, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hidekazu TAKAHASHI, Yohei MONMA, Daiki YAMADA, Takahiro IGUCHI, Kazuo NISHI
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Publication number: 20090183766Abstract: A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.Type: ApplicationFiled: January 16, 2009Publication date: July 23, 2009Inventors: Hidekazu TAKAHASHI, Daiki YAMADA, Yohei MONMA, Hiroki ADACHI, Shunpei YAMAZAKI
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Publication number: 20090174023Abstract: A semiconductor element is formed on a first surface of the substrate. A resin layer is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side surface of the substrate. A step is formed on the side surface of the substrate. The width of the upper section of the substrate with a step is narrower than the lower section of the substrate with a step. Therefore, the substrate can also be a protrusion.Type: ApplicationFiled: December 23, 2008Publication date: July 9, 2009Inventors: Hidekazu TAKAHASHI, Daiki YAMADA, Yohei MONMA, Hiroki ADACHI, Shunpei YAMAZAKI
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Publication number: 20090166896Abstract: Objects are to reduce damage to a semiconductor integrated circuit by external stress and to increase the manufacturing yield of a thinned semiconductor integrated circuit. A single crystal semiconductor layer separated from a single crystal semiconductor substrate is used for a semiconductor element included in the semiconductor integrated circuit. Moreover, a substrate which is formed into a thin shape and provided with the semiconductor integrated circuit is covered with a resin layer. In a separation step, a groove for separating a semiconductor element layer is formed in the supporting substrate, and a resin layer is provided over the supporting substrate in which the groove is formed. After that, the resin layer and the supporting substrate are cut in the groove so as to be divided into a plurality of semiconductor integrated circuits.Type: ApplicationFiled: December 19, 2008Publication date: July 2, 2009Inventors: Shunpei YAMAZAKI, Hidekazu TAKAHASHI, Daiki YAMADA, Yohei MONMA, Hiroki ADACHI
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Publication number: 20090023251Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.Type: ApplicationFiled: September 10, 2008Publication date: January 22, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yohei Monma, Atsuhiro Tani, Misako Hirosue, Kenichi Hashimoto, Yasuharu Hosaka