Abstract: A purging compound for removing a processing residue comprising a resin (C) to be purged, from a resin processing machine, comprising: a thermoplastic resin (A) and a non-ionic additive (B) of the following Formula (I) having a melting or softening point of lower than 150° C.: Rn—X ??(I) (where R is a hydrophobic organic group, n is an integer of 1 or more, and X is a polar group), wherein a MFR (280° C. and a load of 2.16 kg) is 30 g/10 min or less, the difference of the solubility parameter between the resin (A) and the resin (C) is +1.6 to ?1.6 (cal/cm3)1/2, the difference of the solubility parameter between the additive (B) and the resin (C) is +1.6 to ?1.6 (cal/cm3)1/2, and the difference of the solubility parameter between the additive (B) and the hydrophobic organic group R is 0.7 (cal/cm3)1/2 or more.

Abstract: [Problem] An object of the present disclosure is to provide a new purging compound for a resin processing machine made from a resin derived from a biomass raw material which reduces the environmental load, and has a purging performance comparable to those of conventional purging compounds for a resin processing machine. [Solution] A purging compound for a resin processing machine contains 10 to 97% by mass of a resin having a bio degree of 30% or more with respect to 100% by mass of the purging compound, wherein the resin has a weight average molecular weight of 200,000 or more and 1,500,000 or less, and a ratio of the weight average molecular weight to the number average molecular weight (Mw/Mn) of 8 or less.

Abstract: A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.

Abstract: Provided is a composition for forming a protective layer which has an excellent acid resistance, an excellent cracking resistance and does not adversely affect semiconductor layers even when acid is used to remove deposits that arise during formation of separation trenches for separating a substrate into device units. Also provided is a method for manufacturing an optical semiconductor device using such a composition. The composition for forming a protective layer includes a siloxane polymer and an organic solvent. The method for manufacturing an optical semiconductor device includes the steps of: forming a protective layer 4 by coating a surface of semiconductor layers 2 and 3 formed on a substrate 1 with a composition for forming a protective layer; forming separation trenches 6 by irradiating the protective layer 4 from above with a laser; and removing deposits that arise during formation of the separation trenches 6.

Abstract: A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1). wherein R1 and R2 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R3 and R4 individually represent an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, m is an integer from 0 to 2, and n is an integer from 1 to 3.