Abstract: The light-emitting device includes a dielectric multilayer film on a second surface having a rectangular shape, and DBR at an opposite surface. The length of a specific side of the rectangular shape is 50 ?m to 250 ?m. A middle point of a side perpendicular to the specific side on the rectangular shape is defined as Q1, a line connecting the center point and the middle point Q1 is defined as M1, an angle formed between the line M1 and the center plane is defined as ?. A middle point of the specific side on the rectangular shape is defined as Q3, a line connecting the center point and the middle point Q3 is defined as M2, and an angle formed between the line M2 and the center plane is defined as ?. ? and ? satisfy the following equations. 0.6?tan(?)?1.0 0.6?tan(?)?1.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device which prevents an increase in driving voltage, and which has low threading dislocation density as a whole. The light-emitting device includes an embossed substrate. The substrate has, on a main surface thereof, a first region in which protrusions are arranged at a small pitch, and second regions in which protrusions are arranged at a large pitch. The second regions correspond to projection areas of a p-pad electrode and an n-pad electrode as viewed through the main surface of the substrate. The first region corresponds to a projection area, as viewed through the main surface of the substrate, of a region in which neither the p-pad electrode nor the n-pad electrode is formed.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device in which a flat semiconductor layer is grown on a sapphire substrate provided with an uneven shape, and a method for producing the same. When the area ratio R of the flat surface area S on the main surface to the total area K of the sapphire substrate is 0.1 or more to less than 0.5, in formation of the semiconductor layer on the sapphire substrate having an uneven shape on the main surface thereof, at least two types of gases: a raw material gas containing a Group III element and a raw material gas containing Group V element are supplied so as to satisfy the equation 1,000?Y/(2×R)?1,200. In the equation, Y is the partial pressure ratio of the raw material gas containing Group V element to the raw material gas containing Group III element.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device which prevents an increase in driving voltage, and which has low threading dislocation density as a whole. The light-emitting device includes an embossed substrate. The substrate has, on a main surface thereof, a first region in which protrusions are arranged at a small pitch, and second regions in which protrusions are arranged at a large pitch. The second regions correspond to projection areas of a p-pad electrode and an n-pad electrode as viewed through the main surface of the substrate. The first region corresponds to a projection area, as viewed through the main surface of the substrate, of a region in which neither the p-pad electrode nor the n-pad electrode is formed.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device in which a flat semiconductor layer is grown on a sapphire substrate provided with an uneven shape, and a method for producing the same. When the area ratio R of the flat surface area S on the main surface to the total area K of the sapphire substrate is 0.1 or more to less than 0.5, in formation of the semiconductor layer on the sapphire substrate having an uneven shape on the main surface thereof, at least two types of gases: a raw material gas containing a Group III element and a raw material gas containing Group V element are supplied so as to satisfy the equation 1,000?Y/(2×R)?1,200. In the equation, Y is the partial pressure ratio of the raw material gas containing Group V element to the raw material gas containing Group III element.