Patents by Inventor Yohei SHIOKAWA

Yohei SHIOKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12364166
    Abstract: This magnetization rotational element includes a spin injection region that extends in a first direction, a first ferromagnetic layer that is laminated on the spin injection region, and a metal region that is adjacent to the spin injection region with an insulator interposed therebetween in a second direction orthogonal to the first direction in a plan view in a lamination direction.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: July 15, 2025
    Assignee: TDK CORPORATION
    Inventors: Eiji Komura, Yohei Shiokawa
  • Patent number: 12336189
    Abstract: This magnetic array includes a substrate, a first unit, a second unit, a word line, a first read line, a second read line, a first gate line, a second gate line, and a source line. Each of the units includes a magnetoresistance effect element, a first switching element, and a second switching element. The magnetoresistance effect element includes a laminate and a wiring provided on the laminate. The first switching element is connected to a reference layer of the laminate. The second switching element is connected to the wiring. Each of the read lines is connected to the first switching element. The word line is connected to the second switching element. The gate lines are respectively connected to the first switching element and the second switching element of different units. The source line is connected to the wiring.
    Type: Grant
    Filed: November 5, 2021
    Date of Patent: June 17, 2025
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Yohei Shiokawa
  • Publication number: 20250160218
    Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.
    Type: Application
    Filed: January 13, 2025
    Publication date: May 15, 2025
    Applicant: TDK CORPORATION
    Inventors: Tomoyuki SASAKI, Yohei SHIOKAWA
  • Patent number: 12290002
    Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
    Type: Grant
    Filed: August 11, 2023
    Date of Patent: April 29, 2025
    Assignee: TDK CORPORATION
    Inventors: Yugo Ishitani, Tomoyuki Sasaki, Yohei Shiokawa
  • Patent number: 12232426
    Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.
    Type: Grant
    Filed: September 12, 2023
    Date of Patent: February 18, 2025
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Yohei Shiokawa
  • Patent number: 12201035
    Abstract: A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.
    Type: Grant
    Filed: August 23, 2023
    Date of Patent: January 14, 2025
    Assignee: TDK CORPORATION
    Inventors: Zhenyao Tang, Yohei Shiokawa, Tomoyuki Sasaki
  • Publication number: 20240407176
    Abstract: A magnetization rotation element includes a spin-orbit torque wiring and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a first layer and a second layer, the first layer is closer to the first ferromagnetic layer than the second layer, the first layer has a negative spin Hall angle, and the second layer has a positive spin Hall angle.
    Type: Application
    Filed: November 24, 2021
    Publication date: December 5, 2024
    Applicant: TDK Corporation
    Inventors: Yohei SHIOKAWA, Yugo ISHITANI, Kosuke HAMANAKA
  • Publication number: 20240385263
    Abstract: This magnetization rotational element includes a spin-orbit torque wiring, a first ferromagnetic layer connected to the spin-orbit torque wiring, and a wiring connected to the spin-orbit torque wiring at a position different from that of the first ferromagnetic layer, wherein the spin-orbit torque wiring and the wiring each contain nitrogen, and the spin-orbit torque wiring and the wiring differ from each other in nitrogen content.
    Type: Application
    Filed: November 19, 2021
    Publication date: November 21, 2024
    Applicant: TDK CORPORATION
    Inventors: Yohei SHIOKAWA, Yugo ISHITANI, Kosuke HAMANAKA
  • Publication number: 20240276890
    Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring that extends in a second direction different from the first direction and together with the nonmagnetic layer sandwiches the first ferromagnetic layer in the first direction; and an electrode that together with the nonmagnetic layer sandwiches the second ferromagnetic layer in at least a part in the first direction, wherein the electrode is in contact with at least a part of a lateral side surface of the second ferromagnetic layer.
    Type: Application
    Filed: April 3, 2024
    Publication date: August 15, 2024
    Applicant: TDK Corporation
    Inventors: Atsushi TSUMITA, Yohei SHIOKAWA
  • Patent number: 12048251
    Abstract: Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: July 23, 2024
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Yohei Shiokawa, Eiji Komura, Keita Suda
  • Patent number: 12035639
    Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.
    Type: Grant
    Filed: February 24, 2023
    Date of Patent: July 9, 2024
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Yohei Shiokawa
  • Patent number: 11974507
    Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring that extends in a second direction different from the first direction and together with the nonmagnetic layer sandwiches the first ferromagnetic layer in the first direction; and an electrode that together with the nonmagnetic layer sandwiches the second ferromagnetic layer in at least a part in the first direction, wherein the electrode is in contact with at least a part of a lateral side surface of the second ferromagnetic layer.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: April 30, 2024
    Assignee: TDK CORPORATION
    Inventors: Atsushi Tsumita, Yohei Shiokawa
  • Publication number: 20240008370
    Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.
    Type: Application
    Filed: September 12, 2023
    Publication date: January 4, 2024
    Applicant: TDK CORPORATION
    Inventors: Tomoyuki SASAKI, Yohei SHIOKAWA
  • Publication number: 20230397505
    Abstract: A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.
    Type: Application
    Filed: August 23, 2023
    Publication date: December 7, 2023
    Applicant: TDK CORPORATION
    Inventors: Zhenyao TANG, Yohei SHIOKAWA, Tomoyuki SASAKI
  • Publication number: 20230389442
    Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
    Type: Application
    Filed: August 11, 2023
    Publication date: November 30, 2023
    Applicant: TDK CORPORATION
    Inventors: Yugo ISHITANI, Tomoyuki SASAKI, Yohei SHIOKAWA
  • Patent number: 11832531
    Abstract: A spin-orbit torque magnetization rotational element includes: a first insulating layer with first and second openings; a first conductive portion formed inside the first opening; a second conductive portion formed inside the second opening; a spin-orbit torque wiring located in a first direction and extends in a second direction over the first and second conductive portions; and a first ferromagnetic layer located on the side opposite to the first insulating layer in the spin-orbit torque wiring, wherein the first conductive portion includes a first surface facing the spin-orbit torque wiring, a second surface facing the first surface and is located at a position farther from the spin-orbit torque wiring than the first surface, and a side surface connecting the first surface and the second surface, and the side surface includes a continuous major surface and a third surface inclined or curved and is discontinuous with respect to the major surface.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: November 28, 2023
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Yohei Shiokawa
  • Patent number: 11793088
    Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.
    Type: Grant
    Filed: November 1, 2022
    Date of Patent: October 17, 2023
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Yohei Shiokawa
  • Patent number: 11778925
    Abstract: A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: October 3, 2023
    Assignee: TDK CORPORATION
    Inventors: Zhenyao Tang, Yohei Shiokawa, Tomoyuki Sasaki
  • Patent number: 11770978
    Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: September 26, 2023
    Assignee: TDK CORPORATION
    Inventors: Yugo Ishitani, Tomoyuki Sasaki, Yohei Shiokawa
  • Patent number: RE50517
    Abstract: A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.
    Type: Grant
    Filed: March 8, 2022
    Date of Patent: August 5, 2025
    Assignee: TDK CORPORATION
    Inventors: Yohei Shiokawa, Tomoyuki Sasaki