Abstract: An electro-optic apparatus includes a substrate; a first conductive member disposed on one side of the substrate; a pixel electrode; a second conductive member disposed outside of a display region; a dummy pixel electrode; and an insulating layer disposed between the pixel electrode and the dummy pixel electrode, and the substrate. The pixel electrode includes a first pixel electrode layer overlapping the first conductive member, and a second pixel electrode layer, overlapping an opening region of a pixel, thinner than the first pixel electrode layer. The dummy pixel electrode includes a first dummy pixel electrode layer overlapping the second conductive member, and a second dummy pixel electrode layer, overlapping the first dummy pixel electrode layer, thinner than the first dummy pixel electrode layer. The insulating layer and the first dummy pixel electrode layer in a portion not overlapping the second conductive member face each other with a gap therebetween.

Abstract: An electrooptic apparatus includes a substrate, a first conductive member provided on one side of the substrate, a first pixel electrode electrically coupled to the first conductive member, a second conductive member provided on the one side of the substrate, and disposed further close to an edge of the substrate than the first pixel electrode, and a second pixel electrode electrically coupled to the second conductive member. The second pixel electrode includes a first portion not electrically coupled to the second conductive member, and a second portion electrically coupled to the second conductive member and disposed around and spaced apart from the first portion in plan view.

Abstract: In an electro-optical device, a first light shielding wall and a second light shielding wall electrically couple a gate electrode and a scan line inside a first groove and a second groove that pass through a side of a semiconductor film of a transistor and reach a scan line on a lower layer side. A first protruding portion and a second protruding portion for contact with an upper layer side are provided at the semiconductor film. Of the first light shielding wall and the second light shielding wall, the second light shielding wall located on an opposite side to a projection direction of the first protruding portion extends to at least a side of the first protruding portion, and the first light shielding wall located on an opposite side to a projection direction of the second protruding portion extends to at least a side of the second protruding portion.

Abstract: A liquid crystal apparatus includes a substrate, a pixel electrode, common wiring provided between the substrate and the pixel electrode, a TFT, a scanning line, a capacitance element provided between the substrate and the scanning line and overlapping the scanning line in plan view, and a second relay electrode electrically coupled to the common wiring and overlapping the scanning line in plan view. A first capacitance electrode serving as one electrode of the capacitance element includes a projecting portion protruding from the scanning line in plan view. The second relay electrode includes a projecting portion overlapping the projecting portion in plan view. The second relay electrode and the first capacitance electrode of the capacitance element are electrically coupled to each other through a contact hole provided between the projecting portion and the projecting portion.

Abstract: Provided is an electro-optical device including: a substrate having a recessed portion that extends in a first direction; a laminated film having a first conductive film, a dielectric film, and a second conductive film; a first insulating film; a light shielding film; a second insulating film; and a semiconductor film including a source region, a channel region, and a drain region that are disposed in this order in the first direction, wherein the laminated film, the first insulating film, the light shielding film, the second insulating film, and the semiconductor film are disposed in this order from the substrate side, and the semiconductor film overlaps with the recessed portion and is disposed along the recessed portion as viewed in plan view.

Abstract: Provided are a scanning line extending along a first direction, a data line extending along a second direction intersecting the first direction, a TFT having a semiconductor layer including one source drain region and a channel region extending along the first direction, at a position overlapping the scanning line in plan view, and another source drain region extending along the second direction, at a position overlapping the data line in plan view, and a first capacitance element and a second capacitance element disposed at a position overlapping the data line, and the first capacitance element and the second capacitance element are configured to include a part of the semiconductor layer.

Abstract: An electro-optical device including a first substrate and a transistor is provided. The first substrate includes a first scanning line having a light shielding property and extending in a first direction between a substrate body and a pixel electrode. The transistor includes a semiconductor film extending in the first direction to overlap with the first scanning line in a layer between the first scanning line and the pixel electrode. In a layer between a gate electrode and a pixel electrode, a second scanning line having a light shielding property extends in the first direction to overlap with the first scanning line in plan view. The second scanning line extends through a position spaced apart from a third contact portion that electrically couples the pixel electrode and the semiconductor film, and is electrically coupled to the gate electrode and the first scanning line.

Abstract: A TFT is provided that has a semiconductor layer in which one source drain region, one LDD region, a channel region, another LDD region, and a first portion of another source drain region extend along a first direction at a position overlapping a scanning line, and a second portion of the other source drain region extends along a second direction at a position overlapping a data line, a light shielding wall is disposed along the one LDD region or the other LDD region extending along the first direction, a substrate has a recessed portion in a region overlapping the light shielding wall, and a part of the light shielding wall is disposed along a side surface and a bottom surface of the recessed portion.

Abstract: An electro-optical device includes a first member having a translucent property, a second member having a translucent property and opposed to the first member with a space being disposed therebetween, and a plurality of pixel electrodes provided at an opposite side from the first member with respect to the second member. The first member includes a substrate body. The second member includes a transparent film. A plurality of lens surfaces having a protruding curved surface and each overlapping, in plan view, with corresponding one of the plurality of pixel electrodes are formed at a surface of the second member that is opposed to the first member. A pillar that extends through the space and is in contact with the first member and the second member is provided between the first member and the second member. The space can be formed by removing a sacrificial layer provided between the first member and the second member.

Abstract: A liquid crystal apparatus includes a scan line extending in a ±X direction, a data line extending in a ±Y direction that intersects with the ±X direction, a TFT having a semiconductor layer in which, at a position overlapping with the scan line in plan view, one source drain region and a channel region extend along the ±X direction, and at a position overlapping with the data line in plan view, another source drain region extends along the ±Y direction, and a first upper capacitance element and a second upper capacitance element provided at a position overlapping with the data line, so as to overlap with the other source drain region in plan view.

Abstract: In an electro-optical device, at a position overlapping in plan view with a data line, a groove is provided that extends through a first interlayer insulating film provided in a layer between a scan line and a transistor, and a second interlayer insulating film provided in a layer between the transistor and a pixel electrode, and reaches a substrate body. A capacitance element includes a first element portion provided between the second interlayer insulating film and the pixel electrode, and a second element portion provided along an inner wall of the groove. The groove reaches an intermediate position in a thickness direction of the substrate body, and a depth is 3 ?m or greater. Therefore, capacitance of the capacitance element is large. A contact hole that electrically couples a gate electrode and the scan line is provided on a side of a semiconductor film.

Abstract: Provided is an electro-optical device including: a substrate having a recessed portion that extends in a first direction; a laminated film having a first conductive film, a dielectric film, and a second conductive film; a first insulating film; a light shielding film; a second insulating film; and a semiconductor film including a source region, a channel region, and a drain region that are disposed in this order in the first direction, wherein the laminated film, the first insulating film, the light shielding film, the second insulating film, and the semiconductor film are disposed in this order from the substrate side, and the semiconductor film overlaps with the recessed portion and is disposed along the recessed portion as viewed in plan view.

Abstract: A TFT is provided that has a semiconductor layer in which one source drain region, one LDD region, a channel region, another LDD region, and a first portion of another source drain region extend along a first direction at a position overlapping a scanning line, and a second portion of the other source drain region extends along a second direction at a position overlapping a data line, a light shielding wall is disposed along the one LDD region or the other LDD region extending along the first direction, a substrate has a recessed portion in a region overlapping the light shielding wall, and a part of the light shielding wall is disposed along a side surface and a bottom surface of the recessed portion.

Abstract: Provided are a scanning line extending along a first direction, a data line extending along a second direction intersecting the first direction, a TFT having a semiconductor layer including one source drain region and a channel region extending along the first direction, at a position overlapping the scanning line in plan view, and another source drain region extending along the second direction, at a position overlapping the data line in plan view, and a first capacitance element and a second capacitance element disposed at a position overlapping the data line, and the first capacitance element and the second capacitance element are configured to include a part of the semiconductor layer.

Abstract: A plant facility apparatus recognition system is provided, which appropriately recognizes a plant facility apparatus even in a plant facility in which a wireless facility and a marker are not able to be installed even when the shape of the plant facility apparatus is different from or has been changed from design data. The plant facility apparatus recognition system that uses a mobile device having a camera to recognize the plant facility apparatus to be subjected to work in the plant facility includes a characteristic length acquirer that acquires information on the pipe as a first characteristic length from an image obtained by causing the camera to image the plant facility apparatus and the pipe existing near the plant facility apparatus, and a characteristic length comparator that compares the first characteristic length with a second characteristic length acquired from the design data and related to the pipe.

Abstract: An electro-optical device includes an electro-optical panel and a frame configured to support the electro-optical panel. The electro-optical panel includes a first member being a translucent substrate body, a second member being a translucent film and opposed to the first member, and pixel electrodes provided at an opposite side from the first member with respect to the second member. Lens surfaces having a protruding curved surface and each overlapping, in plan view, with each one of pixel electrodes are formed at a surface of the second member that is opposed to the first member. Since an inlet passage and an outlet passage, each of which communicates with the space, are formed between the first member and the second member, a refrigerant is caused to pass through the space by way of the frame, whereby it is possible to cool the electro-optical panel.

Abstract: In an electro-optical device, a first light shielding wall and a second light shielding wall electrically couple a gate electrode and a scan line inside a first groove and a second groove that pass through a side of a semiconductor film of a transistor and reach a scan line on a lower layer side. A first protruding portion and a second protruding portion for contact with an upper layer side are provided at the semiconductor film. Of the first light shielding wall and the second light shielding wall, the second light shielding wall located on an opposite side to a projection direction of the first protruding portion extends to at least a side of the first protruding portion, and the first light shielding wall located on an opposite side to a projection direction of the second protruding portion extends to at least a side of the second protruding portion.

Abstract: A flying body includes an observation data generation unit that generates observation data on the basis of radio waves received by a radar, an image generation unit that generates an image representing a monitoring space on the basis of the observation data generated by the observation data generation unit, and a detection unit that detects a detection target on the basis of the image generated by the image generation unit.

Abstract: An electro-optical device including a first substrate and a transistor is provided. The first substrate includes a first scanning line having a light shielding property and extending in a first direction between a substrate body and a pixel electrode. The transistor includes a semiconductor film extending in the first direction to overlap with the first scanning line in a layer between the first scanning line and the pixel electrode. In a layer between a gate electrode and a pixel electrode, a second scanning line having a light shielding property extends in the first direction to overlap with the first scanning line in plan view. The second scanning line extends through a position spaced apart from a third contact portion that electrically couples the pixel electrode and the semiconductor film, and is electrically coupled to the gate electrode and the first scanning line.

Abstract: In an electro-optical device, at a position overlapping in plan view with a data line, a groove is provided that extends through a first interlayer insulating film provided in a layer between a scan line and a transistor, and a second interlayer insulating film provided in a layer between the transistor and a pixel electrode, and reaches a substrate body. A capacitance element includes a first element portion provided between the second interlayer insulating film and the pixel electrode, and a second element portion provided along an inner wall of the groove. The groove reaches an intermediate position in a thickness direction of the substrate body, and a depth is 3 ?m or greater. Therefore, capacitance of the capacitance element is large. A contact hole that electrically couples a gate electrode and the scan line is provided on a side of a semiconductor film.