Abstract: A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.

Abstract: A plasma processing apparatus includes a processing chamber, a high frequency power supply and a load variation stabilization circuit. The high frequency power supply is configured to supply a high frequency power to the processing chamber and generate plasma inside the processing chamber. The load variation stabilization circuit is connected in parallel with the processing chamber at a connection portion provided between the high frequency power supply and the processing chamber. The load variation stabilization circuit is configured to suppress variation in a load impedance when viewing a downstream side from the connection portion.

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.

Abstract: A capacitively-coupled plasma processing apparatus includes: at least one chamber body providing chambers separated from each other; upper electrodes respectively installed in upper spaces within the chambers; lower electrodes respectively installed in lower spaces within the chambers; a high frequency power supply; a transformer including a primary coil electrically connected to the high frequency power supply, and secondary coils each of which coils having a first end and a second end; first condensers respectively connected between each of the first ends of the secondary coils and the upper electrodes; and second condensers respectively connected between each of the second ends of the secondary coils and the lower electrodes. The primary coil extends around a central axis. The secondary coils are configured to be coaxially disposed with respect to the primary coil. A self-inductance of each of the secondary coils is smaller than that of the primary coil.

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Abstract: A capacitively coupled plasma processing apparatus includes: a chamber body configured to provide a chamber; first and second electrodes installed such that an internal space of the chamber is defined between the first and second electrodes; a high frequency power supply; a matcher for impedance matching connected to the high frequency power supply; a transformer including a primary coil coupled to the high frequency power supply via the matcher, first and second secondary coils; and at least one impedance adjusting circuit having a variable impedance, and installed in at least one of a first serial circuit between the first electrode and a ground connected to the other end of the first secondary coil, and a second serial circuit between the second electrode and a ground connected to the other end of the second secondary coil.

Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract: A transformer includes: a rotary shaft configured to rotate about a central axis of the rotary shaft as a rotational axis; a primary-side first coil configured to extend around a first axis perpendicular to the central axis; a secondary-side second coil configured to extend around a second axis and supported by the rotary shaft, the second axis being perpendicular to the rotational axis in an area surrounded by the first coil; and a secondary-side third coil configured to extend around a third axis and supported by the rotary shaft, the third axis being perpendicular to the rotational axis and forming a predetermined angle with the second axis in the area.

Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

Abstract: A plasma processing apparatus includes a processing chamber, a high frequency power supply and a load variation stabilization circuit. The high frequency power supply is configured to supply a high frequency power to the processing chamber and generate plasma inside the processing chamber. The load variation stabilization circuit is connected in parallel with the processing chamber at a connection portion provided between the high frequency power supply and the processing chamber. The load variation stabilization circuit is configured to suppress variation in a load impedance when viewing a downstream side from the connection portion.

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract: A plasma processing apparatus includes: a processing chamber; a substrate holding unit; a processing gas supply unit; a RF antenna having an inner antenna coil and an outer antenna coil; a high frequency power supply unit; at least one floating coil that is in an electrically floating state and provided outside the processing chamber to be coupled to at least one of the inner antenna coil and the outer antenna coil by an electromagnetic induction; and a capacitor. The inner antenna coil includes a single inner coil segment or more than one inner coil segments connected in series, the outer antenna coil includes a plurality of outer coil segments segmented in a circumferential direction and electrically connected with each other in parallel, and the at least one floating coil is positioned between the inner antenna coil and the outer antenna coil in a radial direction.

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract: A plasma processing method for performing a plasma process on a processing target substrate is provided. The plasma processing method includes: segmenting a RF antenna into an inner coil, an intermediate coil, and an outer coil with gaps therebetween in a radial direction, respectively, the inner coil, the intermediate coil and the outer coil being electrically connected to one another in parallel between a first node and a second node; providing a variable intermediate capacitor and a variable outer capacitor between the first node and the second node, the variable intermediate capacitor being electrically connected in series to the intermediate coil, the variable outer capacitor being electrically connected in series to the outer coil, no reactance device being connected to the inner coil; and controlling plasma density distribution on the processing target substrate by selecting or variably adjusting electrostatic capacitances of the intermediate capacitor and the outer capacitor.

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Abstract: A plasma processing apparatus includes at least one asymmetry member that causes a non-uniformity of plasma density around a high frequency electrode in an azimuthal direction; and a plasma density distribution controller. The plasma density distribution controller includes a first conductor which has first and second surfaces facing opposite directions to each other and is electrically connected with the high frequency electrode, the first surface facing a portion of a rear surface of the high frequency electrode; a second conductor which includes a first connecting portion electrically connected with a portion of the second surface of the first conductor and a second connecting portion electrically connected with a conductive grounding member electrically grounded around the high frequency electrode; and a conductor moving unit for varying a position of at least one of the first conductor and the second conductor in an azimuthal direction of the high frequency electrode.