Abstract: In a process for the formation of SiC films by a low pressure CVD method using a hot-wall type, a dichlorosilane gas and an acetylene gas are used as a source gas, the flow velocity of the source gases in a reactor is set at not less than 70 cm/second, and the temperature for heating the reactor is set at not more than 1,000.degree. C., whereby SiC films having excellent uniformity in the film thickness and film properties on the surface of one substrate and among different substrates can be produced at a high mass productivity without causing any damage to the reactor from heat during the film formation.

Abstract: In a method for forming a silicon carbide film by means of a hot wall type CVD apparatus, which comprises placing a substrate S in a reaction tube 1, reducing the pressure in the reaction tube 1 with an exhaust pump 4 while heating the reaction tube 1 with a heater 2, and introducing a plurality of gases into the reaction tube 1 through at least one gas-introducing tube, the silicon carbide film is formed on the substrate S from at least an acetylene gas and a dichlorosilane gas as a plurality of the above gases by alternately repeating the following procedures (A) and (B),(A) introducing the acetylene gas for at least 2 seconds, and(B) introducing the dichlorosilane gas for 3 to 12 seconds. The present invention enables the production of a silicon carbide film excellent in uniformity of the film thickness and film properties and smoothness of the film surface.

Abstract: In a method of processing an article, the article is introduced into a supercritical atmosphere which is formed in a pressure vessel and which atmosphere comprises carbon dioxide. When the article comprises an exposed resist film on a surface layer formed on a substrate, the exposed resist film is selectively removed to leave a predetermined pattern in the supercritical atmosphere and is thus processed into a patterned resist film. After the surface layer is selectively etched through the patterned resist film to form a patterned surface layer, the patterned resist film may be introduced into the supercritical atmosphere to be completely removed from the patterned surface layer. On processing the article, such as a compact disc, a mechanical parts, or the like, the article may be also introduced into the supercritical atmosphere to be cleaned up.