Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: An electrostatic generator includes a substrate, an electrode formed on or in a surface of the substrate, an electret film provided so as to be opposed to the electrode and an insulating film on an electrode side formed on a surface of the electrode on a side opposed to the electret film.

Abstract: A power generating apparatus (100) is provided with first substrates (2b, 2c) whereupon a first electrode (3) is arranged on one surface; a second substrate (1a) which includes a second electrode (6) arranged to face a first electrode on the one surface side of the first substrate; and sliding mechanisms (10, 11, 12, 13 and 14) arranged at least on the one surface side or the other surface side of the first substrate. The sliding mechanism holds the first substrate so that the first substrate moves relatively to the second substrate in a second direction (X direction) while suppressing movement of the first substrate in a first direction (Z direction).

Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22), a fixed electrode section (10) having an electret film (12) opposed to the movable section (20) at a predetermined distance and capable of storing charge and a conductive layer (14) formed on a predetermined region on the upper surface of the electret film (12), and an insulating film (13) interposed between the electret film (12) and the conductive layer (14).

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22) and a fixed electrode section (10) having an electret film (12) opposed to the movable electrode section (20) at a predetermined distance and capable of storing charge and a conductive layer (13) formed on a predetermined region on the upper surface of the electret film (12). The conductive layer (13) is formed on the surface of a region of the electret film (12), and the region is projected.

Abstract: A power generating apparatus (100) is provided with first substrates (2b, 2c) whereupon a first electrode (3) is arranged on one surface; a second substrate (1a) which includes a second electrode (6) arranged to face a first electrode on the one surface side of the first substrate; and sliding mechanisms (10, 11, 12, 13 and 14) arranged at least on the one surface side or the other surface side of the first substrate. The sliding mechanism holds the first substrate so that the first substrate moves relatively to the second substrate in a second direction (X direction) while suppressing movement of the first substrate in a first direction (Z direction).

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22), a fixed electrode section (10) having an electret film (12) opposed to the movable section (20) at a predetermined distance and capable of storing charge and a conductive layer (14) formed on a predetermined region on the upper surface of the electret film (12), and an insulating film (13) interposed between the electret film (12) and the conductive layer (14).

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22) and a fixed electrode section (10) having an electret film (12) opposed to the movable electrode section (20) at a predetermined distance and capable of storing charge and a conductive layer (13) formed on a predetermined region on the upper surface of the electret film (12). The conductive layer (13) is formed on the surface of a region of the electret film (12), and the region is projected.

Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: An operation apparatus includes a first electrode, and a second electrode including an electric field or magnetic field generating region, wherein the first electrode and the second electrode are so arranged that a center of the first electrode in a movement direction and a center of the electric field or magnetic field generating region of the second electrode in the movement direction deviate from each other in an initial state.

Abstract: An electrostatic generator includes a substrate, an electrode formed on or in a surface of the substrate, an electret film provided so as to be opposed to the electrode and an insulating film on an electrode side formed on a surface of the electrode on a side opposed to the electret film.

Abstract: A semiconductor apparatus is constructed such that the top surface, contacting a barrier metal film, of a conducting film embedded in a trench is located below the top surface of a second interlayer insulating film. The semiconductor apparatus is fabricated such that a plasma treatment is performed in a non-nitriding environment after a polishing process using CMP, so as to form a damaged layer on top of the second interlayer insulating film and the conducting film, and a portion of the damaged layer is removed by etching.

Abstract: A sensor capable of increasing an electric signal output therefrom by inhibiting an electrode plate from vibration is obtained. This sensor comprises a diaphragm provided in a vibrative manner, an electrode plate, opposed to the diaphragm at a prescribed distance, having a hole and a support made of a material having an elastic modulus higher than the elastic modulus of a material constituting the electrode plate for supporting the electrode plate. The support is so formed as to cover at least two of the upper surface and the lower surface of the electrode plate and the side surface of the hole.

Abstract: A semiconductor apparatus is constructed such that the top surface, contacting a barrier metal film, of a conducting film embedded in a trench is located below the top surface of a second interlayer insulating film. The semiconductor apparatus is fabricated such that a plasma treatment is performed in a non-nitriding environment after a polishing process using CMP, so as to form a damaged layer on top of the second interlayer insulating film and the conducting film, and a portion of the damaged layer is removed by etching.