Patents by Inventor Yohsuke Itagaki

Yohsuke Itagaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7795593
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Grant
    Filed: October 9, 2008
    Date of Patent: September 14, 2010
    Assignee: TOPCON Corporation
    Inventors: Takeo Ushiki, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide
  • Patent number: 7700380
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Grant
    Filed: June 13, 2005
    Date of Patent: April 20, 2010
    Assignee: Topcon Corporation
    Inventors: Takeo Ushiki, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide
  • Publication number: 20090039274
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Application
    Filed: October 9, 2008
    Publication date: February 12, 2009
    Applicant: TOPCON Corporation
    Inventors: Takeo USHIKI, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide
  • Publication number: 20050230622
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Application
    Filed: June 13, 2005
    Publication date: October 20, 2005
    Inventors: Takeo Ushiki, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide
  • Patent number: 6943043
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: September 13, 2005
    Assignee: Fab Solutions, Inc.
    Inventors: Takeo Ushiki, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide
  • Publication number: 20040206903
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Application
    Filed: April 26, 2004
    Publication date: October 21, 2004
    Inventors: Takeo Ushiki, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide
  • Patent number: 6753194
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Grant
    Filed: February 26, 2002
    Date of Patent: June 22, 2004
    Assignee: Fab Solutions, Inc.
    Inventors: Takeo Ushiki, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide
  • Publication number: 20020123161
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Application
    Filed: February 26, 2002
    Publication date: September 5, 2002
    Inventors: Takeo Ushiki, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide