Patents by Inventor Yohtz Julian CHANG

Yohtz Julian CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING SAME
    Publication number: 20240332395
    Abstract: A semiconductor device structure and a method of forming the structure are disclosed. The semiconductor device structure includes a first capacitor and a second capacitor. The first capacitor is formed in a first redundant area, and the second capacitor is formed in a second redundant area. Since the first and second capacitors are formed in the respective redundant areas of the substrate, they will not unnecessarily occupy portions of a device area.
    Type: Application
    Filed: January 29, 2022
    Publication date: October 3, 2024
    Inventors: Yohtz Julian CHANG, Yunbo CHEN, Canyang HUANG, Zeyong CHEN