Abstract: A power supply device includes an inductor controlled by switching to be charged or discharged such that a DC input voltage is boosted and a capacitor which smoothes the boosted voltage to generate a DC output voltage. Specifically, the power supply device further includes a transistor connected between the inductor and the capacitor to carry out a rectification function; an output voltage determination circuit which refers to the DC input voltage and the DC output voltage to determine the level of these voltages; and a current control circuit which controls a current flowing through the transistor such that the current has a predetermined value when the output voltage determination circuit determines that the DC output voltage is lower than the DC input voltage.

Abstract: A multilayer piezoelectric device including a body having internal electrode layers and piezoelectric ceramic layers alternately stacked. The internal electrode layers contain Cu as a major component, the piezoelectric ceramic layers contain a compound oxide represented by Pb(Ti, Zr)O3 as a major component, and a metal oxide (Nb2O5, Sb2O5, Ta2O5, or WO3) containing Nb, Sb, Ta, or W, which is at least one of a pentavalent metal element and a hexavalent metal element, is incorporated in the piezoelectric ceramic layers such that the concentration of the metal oxide decreases with distance from the internal electrode layers. Thereby, even in a case where internal electrodes contain Cu as a major component, it is possible to provide a multilayer piezoelectric device which can be obtained by low-temperature firing while ensuring a sufficient piezoelectric constant.

Abstract: A multilayer piezoelectric device including a body having internal electrode layers and piezoelectric ceramic layers alternately stacked. The internal electrode layers contain Cu as a major component, the piezoelectric ceramic layers contain a compound oxide represented by Pb(Ti, Zr)O3 as a major component, and a metal oxide (Nb2O5, Sb2O5, Ta2O5, or WO3) containing Nb, Sb, Ta, or W, which is at least one of a pentavalent metal element and a hexavalent metal element, is incorporated in the piezoelectric ceramic layers such that the concentration of the metal oxide decreases with distance from the internal electrode layers. Thereby, even in a case where internal electrodes contain Cu as a major component, it is possible to provide a multilayer piezoelectric device which can be obtained by low-temperature firing while ensuring a sufficient piezoelectric constant.

Abstract: A piezoelectric device is formed by simultaneously firing a piezoelectric ceramic mainly composed of a perovskite complex oxide represented by general formula ABO3 and electrodes mainly composed of copper. The piezoelectric ceramic is represented by Pb??aMea[(MII1/3MV(2+b)/3)zTixZr1?x?z]O3 (wherein Me represe element, MII is an acceptor element which is a divalent metal element, and MV is a donor element which is a pentavalent metal element), and satisfies equations 0.05?z?0.40, 0<bz/3?0.035, 0.345?x?0.480, 0.965???1.020, and 0?a?0.05. In other words, the B sites contain excessive donors, and thus a piezoelectric device having good piezoelectric characteristics can be obtained even in the cases where a base metal material mainly composed of inexpensive copper is used as the internal electrode material.

Abstract: A multilayer piezoelectric device including a body having internal electrode layers and piezoelectric ceramic layers alternately stacked. The internal electrode layers contain Cu as a major component, the piezoelectric ceramic layers contain a compound oxide represented by Pb(Ti, Zr)O3 as a major component, and a metal oxide (Nb2O5, Sb2O5, Ta2O5, or WO3) containing Nb, Sb, Ta, or W, which is at least one of a pentavalent metal element and a hexavalent metal element, is incorporated in the piezoelectric ceramic layers such that the concentration of the metal oxide decreases with distance from the internal electrode layers. Thereby, even in a case where internal electrodes contain Cu as a major component, it is possible to provide a multilayer piezoelectric device which can be obtained by low-temperature firing while ensuring a sufficient piezoelectric constant.

Abstract: A semiconductor integrated circuit (10A) which converts an input supply voltage (Vi=2.5 to 4 V) applied to an input terminal (P1) into a first output voltage (Vo1=5 V) and outputs the first output voltage from an output terminal (P2), includes a first control circuit (17) which supplies a switching unit (11, 12, 13, 14) interposed between the input terminal (P1) and the output terminal (P2) with a switching signal so as to bring a feedback voltage (Vf1) based on an output voltage of the output terminal (P2) close to a target value; and an external setting terminal (P3) which sets the feedback voltage (Vf1) to a prescribed potential regardless of voltage of the output terminal (P2).

Abstract: A power supply device includes an inductor controlled by switching to be charged or discharged such that a DC input voltage is boosted and a capacitor which smoothes the boosted voltage to generate a DC output voltage. Specifically, the power supply device further includes a transistor connected between the inductor and the capacitor to carry out a rectification function; an output voltage determination circuit which refers to the DC input voltage and the DC output voltage to determine the level of these voltages; and a current control circuit which controls a current flowing through the transistor such that the current has a predetermined value when the output voltage determination circuit determines that the DC output voltage is lower than the DC input voltage.

Abstract: A piezoelectric device is formed by simultaneously firing a piezoelectric ceramic mainly composed of a perovskite complex oxide represented by general formula ABO3 and electrodes mainly composed of copper. The piezoelectric ceramic is represented by Pb??aMea[(MII1/3MV(2+b)/3)zTixZr1?x?z]O3 (wherein Me represents a metal element, MII is an acceptor element which is a divalent metal element, and MV is a donor element which is a pentavalent metal element), and satisfies equations 0.05?z?0.40, 0<bz/3?0.035, 0.345?x?0.480, 0.965???1.020, and 0?a?0.05. In other words, the B sites contain excessive donors, and thus a piezoelectric device having good piezoelectric characteristics can be obtained even in the cases where a base metal material mainly composed of inexpensive copper is used as the internal electrode material.

Abstract: A processing apparatus comprises a process apparatus body equipped with a plurality of process sections for applying a predetermined processing to a target object and a transfer device for transferring the target object among the process sections, a first control section for controlling the entire process apparatus body including the transfer device, a second control section for controlling the plural process sections, an information storage section receiving the signal exchanged between the first control section and the second control section and storing a plurality of information including the information corresponding to the received signal, and an information storage selecting mechanism for selecting the storing frequency of the information to the information storage section in accordance with the kind of the information.

Abstract: An object of the present invention is to grasp easily a process history of a target object such as a semiconductor wafer. The processing apparatus of the present invention includes: a processing apparatus body which includes a plurality of process units for executing a prescribed process to a target object, and transport mechanism for transporting said target object between the process units; a first controller for controlling the processing apparatus as a whole; a second controller for controlling the process units; an information storage section for taking in a signal transmitted and received between the first and second controllers; and a host computer for monitoring operation states of the process units. The present invention is extended to a processing system including a plurality of the processing apparatuses connected with a host computer which is further connected with a monitor computer through a communication network.

Abstract: A substrate processing apparatus including lift pins for lifting the substrate capable of moving up and down, a heating plate with holes through which the lift pins protrude and sink to a surface facing the substrate, a lid placed above the heating plate capable of moving up and down, a first inert gas introducing mechanism introducing a first inert gas to the inside portion of the lid and a second inert gas introducing mechanism introducing a second inert gas onto the surface of the heating plate through the holes. With such configuration, the inert gas can be introduced to both sides, the front side and the rear side, of the substrate, and oxygen is prevented from being forced to come around to the surface of the substrate from the rear side thereof. As a result, oxidation of the substrate can be prevented effectively.

Abstract: A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.

Abstract: A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: A closed space is formed in a reduced pressure drying station, and the closed space is brought to a vacuum state. In this state, an EB unit irradiates a wafer mounted on a hot plate with an electron beam to foam an insulating film material. Subsequently, the hot plate is raised to a predetermined temperature, and drying processing is performed under a reduced pressure. As described above, since the foaming processing is performed in the reduced pressure drying station, bubbles remain in the insulating film, so that the existence of the bubbles can decrease the relative dielectric constant.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: A processing apparatus comprises a process apparatus body equipped with a plurality of process sections for applying a predetermined processing to a target object and a transfer device for transferring the target object among the process sections, a first control section for controlling the entire process apparatus body including the transfer device, a second control section for controlling the plural process sections, an information storage section receiving the signal exchanged between the first control section and the second control section and storing a plurality of information including the information corresponding to the received signal, and an information storage selecting mechanism for selecting the storing frequency of the information to the information storage section in accordance with the kind of the information.

Abstract: A closed space is formed in a reduced pressure drying station, and the closed space is brought to a vacuum state. In this state, an EB unit irradiates a wafer mounted on a hot plate with an electron beam to foam an insulating film material. Subsequently, the hot plate is raised to a predetermined temperature, and drying processing is performed under a reduced pressure. As described above, since the foaming processing is performed in the reduced pressure drying station, bubbles remain in the insulating film, so that the existence of the bubbles can decrease the relative dielectric constant.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.