Patents by Inventor Yoichi Fukushima

Yoichi Fukushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9385130
    Abstract: In order to achieve the reduction of contact resistance by forming a metal silicide layer with a sufficient thickness in an interface between a polycrystalline silicon plug and an upper conductive plug, the polycrystalline silicon plug contains germanium, which is ion-implanted before forming the metal silicide layer.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: July 5, 2016
    Assignee: PS4 Luxco S.a.r.l.
    Inventor: Yoichi Fukushima
  • Publication number: 20160086956
    Abstract: One semiconductor device has a groove formed on one surface of a semiconductor substrate, a gate electrode formed on the lower part of the groove with a gate insulation film interposed there between, a side wall insulation film made of a nitride film formed on the inner wall of the groove above the gate electrode, and an embedded insulation film formed in the groove enclosed by the side wall insulation film above the gate electrode. The side wall insulation film is shaped so that the width increases closer the bottom part of the groove.
    Type: Application
    Filed: April 16, 2014
    Publication date: March 24, 2016
    Inventor: Yoichi Fukushima
  • Patent number: 8427393
    Abstract: The multi-layer display device apparatus has a first display part, a second display part arranged at the rear-side of the first display part, a transforming part arranged between the first and the second display part. The transforming part transforms a linear polarized light in to a non-polarized light. Further, the display device has a storage part which stores a parameter for adjusting the image quality of the image displayed on the first and second display part, and an image adjustment part which adjusts the image quality of the image displayed in the first and second display part based on the parameter stored in the storage part.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: April 23, 2013
    Assignee: SANYO Electric Co., Ltd.
    Inventors: Yasuhiko Nakazaki, Yoshinori Saito, Tsutomu Fujita, Yoichi Fukushima
  • Publication number: 20130075824
    Abstract: A semiconductor device has first and second conductive type transistors on a substrate. First conductive type transistor includes: a first lower gate electrode portion on the substrate, including silicon including first impurity ions; a first intervening layer on the first lower gate electrode portion, including silicon including oxygen and/or nitrogen; and a first upper gate electrode portion on the first intervening layer, the first upper gate electrode portion including silicon including the first impurity ions.
    Type: Application
    Filed: May 10, 2012
    Publication date: March 28, 2013
    Applicant: ELPIDA MEMORY, INC.
    Inventors: Yoichi FUKUSHIMA, Mika NISHISAKA
  • Publication number: 20120193696
    Abstract: In order to achieve the reduction of contact resistance by forming a metal silicide layer with a sufficient thickness in an interface between a polycrystalline silicon plug and an upper conductive plug, the polycrystalline silicon plug contains germanium, which is ion-implanted before forming the metal silicide layer.
    Type: Application
    Filed: January 25, 2012
    Publication date: August 2, 2012
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Yoichi FUKUSHIMA
  • Publication number: 20120171178
    Abstract: The present invention relates to a nutritional composition, in particular directed to children of 3-6 years, said nutritional composition comprising a protein source, a source of available carbohydrates, a lipid source, at least one probiotic microorganism, and prebiotics, wherein said lipid source comprises DHA (docosahexaenoic acid) and/or ARA (arachidonic acid). The nutritional composition improves cognitive performance, in particular memory, learning comprehension, alertness, attention, concentration, processing speed, conceptual thinking, abstract thinking, verbal abilities, language comprehension, psychomotor skills, curiosity, and confident interaction with the environment. Preferably, the composition comprises one, a combination of several or all selected of the group of DHA, ARA, LA, ALA, choline, iron, iodine and folic acid.
    Type: Application
    Filed: June 1, 2010
    Publication date: July 5, 2012
    Applicant: NESTEC S.A.
    Inventors: Mathilde Fleith, Yoichi Fukushima, Gertrude Rapinett, Johannes Schmitt, Maria-Luiza Mateus
  • Publication number: 20120171177
    Abstract: The present invention relates to a nutritional composition, in particular directed to toddlers and/or a weaning child, said nutritional composition comprising a protein source, a source of available carbohydrates, a lipid source, at least one probiotic microorganism, and prebiotics, wherein said lipid source comprises DHA (docosahexaenoic acid). The nutritional composition improves cognitive performance, in particular learning and memory of the child. Preferably, the composition comprises iron, zinc, vitamin D and/or sialic acid. Preferably, the composition comprises a source of phospholipids rich in DHA.
    Type: Application
    Filed: June 1, 2010
    Publication date: July 5, 2012
    Applicant: NESTEC S.A.
    Inventors: Jan Biehl, Frederic Destaillats, Laurent Fay, Yoichi Fukushima, Johannes Schmitt, Bing Wang
  • Patent number: 8193063
    Abstract: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. First and second gate electrodes are formed over a semiconductor substrate. An epitaxial layer is selectively formed over the semiconductor substrate. The epitaxial layer is adjacent to the first gate electrode. A first impurity is introduced into the semiconductor substrate through the epitaxial layer to form a first impurity region and directly into the semiconductor substrate to form a second impurity region. The first and second impurity regions are adjacent to the first and second gate electrodes, respectively. The first impurity region includes the epitaxial layer. A first bottom surface of the first impurity region is shallower in level than a second bottom surface of the second impurity region.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: June 5, 2012
    Assignee: Elpida Memory, Inc.
    Inventor: Yoichi Fukushima
  • Publication number: 20110268702
    Abstract: The present invention generally relates to the field of obesity and/or metabolic disorders. In particular the present invention relates to the use of probiotics to treat obesity and/or metabolic disorders. One embodiment of the present invention relates to the use of Lactobacillus paracasei, in particular Lactobacillus paracasei ST11, for the preparation of a composition to treat or prevent metabolic disorders.
    Type: Application
    Filed: May 14, 2009
    Publication date: November 3, 2011
    Applicant: NESTEC S.A.
    Inventor: Yoichi Fukushima
  • Publication number: 20110215991
    Abstract: The multi-layer display device apparatus has a first display part, a second display part arranged at the rear-side of the first display part, a transforming part arranged between the first and the second display part. The transforming part transforms a linear polarized light in to a non-polarized light. Further, the display device has a storage part which stores a parameter for adjusting the image quality of the image displayed on the first and second display part, and an image adjustment part which adjusts the image quality of the image displayed in the first and second display part based on the parameter stored in the storage part.
    Type: Application
    Filed: March 4, 2011
    Publication date: September 8, 2011
    Applicants: SANYO ELECTRIC CO., LTD., SANYO ELECTRIC SYSTEM SOLUTIONS CO., LTD.
    Inventors: Yasuhiko NAKAZAKI, Yoshinori SAITO, Tsutomu FUJITA, Yoichi FUKUSHIMA
  • Publication number: 20110151656
    Abstract: A method of forming a semiconductor device, the method including the following processes. A groove is formed in a semiconductor substrate. A gate electrode is formed in the groove. A boron-phosphorus silicate glass film is formed over the gate electrode. An etching process is performed using the boron-phosphorus silicate glass film as an etching stopper for preventing the gate electrode from being removed.
    Type: Application
    Filed: December 8, 2010
    Publication date: June 23, 2011
    Applicant: Elpida Memory, Inc.
    Inventor: Yoichi FUKUSHIMA
  • Publication number: 20100323484
    Abstract: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. First and second gate electrodes are formed over a semiconductor substrate. An epitaxial layer is selectively formed over the semiconductor substrate. The epitaxial layer is adjacent to the first gate electrode. A first impurity is introduced into the semiconductor substrate through the epitaxial layer to form a first impurity region and directly into the semiconductor substrate to form a second impurity region. The first and second impurity regions are adjacent to the first and second gate electrodes, respectively. The first impurity region includes the epitaxial layer. A first bottom surface of the first impurity region is shallower in level than a second bottom surface of the second impurity region.
    Type: Application
    Filed: June 8, 2010
    Publication date: December 23, 2010
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Yoichi FUKUSHIMA
  • Patent number: 7585736
    Abstract: A method of manufacturing a semiconductor device includes steps (a) to (d). The step (a) is a step of forming a first insulating film and a nitride film on a semiconductor substrate in this order. The step (b) is a step of removing said first insulating film and said nitride film in a first region while leaving said first insulating film and said nitride film in a second region. The step (c) is a step of forming a second insulating film on said semiconductor substrate in said first region. Here, a thickness of said second insulating film is different from that of said first insulating film. A third insulating film is formed on said nitride film in said second region along with the formation of said second insulating film. The step (d) is a step of removing said third insulating film and said nitride film in said second region.
    Type: Grant
    Filed: March 16, 2007
    Date of Patent: September 8, 2009
    Assignee: Elpida Memory, Inc.
    Inventor: Yoichi Fukushima
  • Publication number: 20070218666
    Abstract: A method of manufacturing a semiconductor device includes steps (a) to (d). The step (a) is a step of forming a first insulating film and a nitride film on a semiconductor substrate in this order. The step (b) is a step of removing said first insulating film and said nitride film in a first region while leaving said first insulating film and said nitride film in a second region. The step (c) is a step of forming a second insulating film on said semiconductor substrate in said first region. Here, a thickness of said second insulating film is different from that of said first insulating film. A third insulating film is formed on said nitride film in said second region along with the formation of said second insulating film. The step (d) is a step of removing said third insulating film and said nitride film in said second region.
    Type: Application
    Filed: March 16, 2007
    Publication date: September 20, 2007
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Yoichi Fukushima
  • Patent number: 5292616
    Abstract: A technique of an optical card having high information recording density. A specially superior writing characteristic is required for an additional recording optical card among optical cards. In the case where the optical card of additional recording type is closed, reduction in the writing characteristic is observed. In this invention, a sensitizing layer (50), which serves as escape for molten recording material at writing, is provided in rear of an optical recording section (30), so that an optical card is produced which is superior in both environmental resistance and writing ability. The sensitizing layer (50) is made of self-oxidizable or thermoplastic resin and an absorbing agent dispersed in the resin. The absorbing agent cooperates with the resin not only to improve a writing characteristic, but also to improve design ability and reading ability of the card.
    Type: Grant
    Filed: February 12, 1991
    Date of Patent: March 8, 1994
    Assignee: Kyodo Printing Co., Ltd.
    Inventors: Minoru Fujita, Yuji Kakinuma, Yoichi Fukushima
  • Patent number: 5272326
    Abstract: A technique of optical card having high information recording density. In the optical cards, there are two types of optical cards having a read-only optical card and an additional recording optical card. Conventionally, separate readers for reproduction have been used due to difference in light reflectivity. In this invention, a light-absorbing layer (50) having light absorbing ability with respect to reading light (300) is arranged between a card side upon which the reading light is incident and a reflective surface of a pattern (21) of an optical data recording section (20), so that the optical cards have interchangeability therebetween in reading.
    Type: Grant
    Filed: November 16, 1992
    Date of Patent: December 21, 1993
    Assignee: Kyodo Printing Co., Ltd.
    Inventors: Minoru Fujita, Yoichi Fukushima
  • Patent number: 5217844
    Abstract: An optical recording medium includes a silver grain layer containing a large number of blackened fine silver grains and a coloring matter layer containing coloring matter on a base board and the coloring matter has an ability of absorbing near-infrared ray. When laser beam having a density of optical energy more than a boundary which represents a threshold with respect to the density of optical energy is radiated to the optical recording medium, a part of the latter is deformed to form a plurality of convexities which will be utilized as optical recording pit. The recording pits formed in this way are detected by presence or absence of reflection of radiated light whereby the content of optical recorded informations can be read. The optical recording pits are not deformed further irrespective of how long a reading light comprising laser beam having a density of energy less than the threshold is repeatedly radiated to the optical pits.
    Type: Grant
    Filed: November 8, 1989
    Date of Patent: June 8, 1993
    Assignee: Kyodo Printing Co., Ltd.
    Inventors: Yoichi Fukushima, Minoru Fujita, Yuji Kakinuma
  • Patent number: 5156941
    Abstract: An optical or magneto-optical recording card is produced using a transfer type optical or magneto-optical recording medium. The transfer type optical or magneto-optical recording medium comprises a base film, a peeling layer, an optical or magneto-optical recording layer and a light permeable adhesive layer which are successively superimposed one above another to constitute a layered structure. A protective layer is adhered to the transfer type optical or magneto-optical recording medium with the aid of an adhesive layer and the base film is then peeled off together with the peeling layer. Next, the protective layer to which the optical or magneto-optical recording layer is adhered is adhesively attached to a card base in such a manner that the optical or magneto-optical recording layer is interposed therebetween whereby an optical or magneto-optical recording card is completely produced. The transfer type recording medium can be preserved in such a state that it is wound about a reel.
    Type: Grant
    Filed: August 23, 1989
    Date of Patent: October 20, 1992
    Assignee: Kyodo Printing Co., Ltd.
    Inventors: Minoru Fujita, Yoichi Fukushima, Toshio Haga
  • Patent number: 5114531
    Abstract: A method of producing a plurality of masks which are used when ROM type data are written in an optical recording medium for ROM type optical recording cards. The method is practiced by way of steps of producing a mother mask having a preformatting pattern, next, transcribing the preformatting pattern for the mother mask, next, producing a master mask having a required optical recording pattern written therein and next, producing a working mask from the master mask. When the preformatting pattern is prepared in a writable type, writing or inspecting of the master mask or inspecting of the working mask or mother mask can be achieved using a writing/reading apparatus for writable type optical recording cards.
    Type: Grant
    Filed: October 12, 1990
    Date of Patent: May 19, 1992
    Assignee: Kyodo Printing Co., Ltd.
    Inventors: Yoichi Fukushima, Minoru Fujita, Yuji Kakinuma
  • Patent number: 5111033
    Abstract: In an optical card, a card substrate has its rigidity which is sufficient to handle the card substrate independently. The card substrate has a first side which serves as a reading side upon which reading light is incident. An optical-data recording section includes a light-reflective pattern. The optical-data recording section is arranged on one of the first and second sides of the card substrate. Optical data incident upon the optical-data recording section toward the reading side of the card substrate is recorded by the optical-data recording section. A shielding layer is arranged on one of the first and second sides of the card substrate, for shielding the optical-data recording section from a viewer's field of view. The shielding layer has its transmission characteristic with respect to the reading light, which is sufficient to shield light within a visual range and to enable reading of the optical-data recording section.
    Type: Grant
    Filed: September 6, 1991
    Date of Patent: May 5, 1992
    Assignee: Kyodo Printing Co., Ltd.
    Inventors: Minoru Fujita, Yuji Kakinuma, Yoichi Fukushima