Patents by Inventor Yoichi Hoshi

Yoichi Hoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230095519
    Abstract: A vehicle includes a regenerative brake of a rotating electric machine and a friction brake which is a mechanical brake as braking means for applying a braking force to rotations of the left and right wheels at the front and rear of the vehicle. The vehicle also includes an SOC information obtaining part that obtains an amount of charge (SOC) of a battery of the vehicle and an ECU. The ECU may include a VSA modulator and an ACC-ECU that generate, without a braking operation of the driver, a regenerative braking force with the regenerative brake and a friction braking force with the friction brake. The ECU prohibits an operation of the VSA modulator and/or an operation of the ACC-ECU according to a temperature of the friction brake and the amount of charge (SOC) of the battery.
    Type: Application
    Filed: September 26, 2022
    Publication date: March 30, 2023
    Inventors: Yoichi HOSHI, Kazuya SAKURAI
  • Publication number: 20100219064
    Abstract: A film forming method is constituted by forming a silicon oxide film on a substrate by causing silicon generated by sputtering with silicon as a target to be incident on the substrate from an oblique direction while supplying oxygen gas onto the substrate.
    Type: Application
    Filed: March 3, 2008
    Publication date: September 2, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Akira Sakai, Yasufumi Asao, Yohei Ishida, Yoichi Hoshi, Kensuke Yagi
  • Patent number: 6562200
    Abstract: In a thin-film formation process and system, a target and a substrate are placed in a sputtering space and a film-forming space, respectively, the pressure in the film-forming space is maintained at a pressure lower than the pressure in the sputtering space and a pressure sufficient for sputtered particles to move in the film-forming space with their mean free path which is longer than the distance between the grid plate and the substrate, and the target is sputtered to form a thin film on the substrate.
    Type: Grant
    Filed: August 22, 2001
    Date of Patent: May 13, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hideo Iwase, Makoto Kameyama, Koji Kitani, Yoichi Hoshi
  • Publication number: 20020023831
    Abstract: In a thin-film formation process and system, a target and a substrate are placed in a sputtering space and a film-forming space, respectively, the pressure in the film-forming space is maintained at a pressure lower than the pressure in the sputtering space and a pressure sufficient for sputtered particles to move in the film-forming space with their mean free path which is longer than the distance between the grid plate and the substrate, and the target is sputtered to form a thin film on the substrate.
    Type: Application
    Filed: August 22, 2001
    Publication date: February 28, 2002
    Inventors: Hideo Iwase, Makoto Kameyama, Koji Kitani, Yoichi Hoshi