Abstract: Disclosed herein is an ion conductive polymer comprising a unit represented by Formula (1) below: —SO2[N?SO2(M+)]X1-??(1) wherein X1 is an integer greater than 1, and M+ is H+ or Li+. Further disclosed is an imide monomer represented by Formula (A) below: Z1-SO2[N?SO2M+]Y-Z2 ??(A) wherein Y is an integer of 2 or greater, Z1 is OH, F, Cl, Br, I or NZ3Z4 (in which Z3 and Z4 are each independently H, M or SiMe3, and M is a metal element), Z2 is OH, F, Cl, Br, I or NZ3Z4 (in which Z3 and Z4 are each independently H, M or SiMe3, and M is a metal element), and M+ is H+ or Li+.

Abstract: An electrolyte having a structure where a fluorinated hydrophilic segment A represented by -E2-[Rf-E1]m- and a hydrocarbon hydrophobic segment B are alternately bonded to each other through chemical bond and a production process therefor, and an electrolyte membrane, a production process therefor, a catalyst layer and a fuel cell using the same. Rf is a linear or a branched perfluoro chain having one or more carbon atoms, E1, and E2 are each a proton conductive portion represented by Formula —(CONM)i1(CO)i2(SO2NM)i3(SO2)i4— (0?i1, 0?i2?1, 0?i3, 0?i4?1, 0<i1+i3, i1 to i4 are each an integer, and M is proton, alkali metal, or alkali earth metal), 2?m (m is an integer), and Rf, E1, and E2 may be each arbitrarily selected in the repeating unit.

Abstract: Disclosed herein is an ion conductive polymer comprising a unit represented by Formula (1) below: —SO2[N?SO2(M+)]X1—??(1) wherein X1 is an integer greater than 1, and M+ is H+ or Li+. Further disclosed is an imide monomer represented by Formula (A) below: Z1-SO2[N?SO2M+]Y-Z2 ??(A) wherein Y is an integer of 2 or greater, Z1 is OH, F, Cl, Br, I or NZ3Z4 (in which Z3 and Z4 are each independently H, M or SiMe3, and M is a metal element), Z2 is OH, F, Cl, Br, I or NZ3Z4 (in which Z3 and Z4 are each independently H, M or SiMe3, and M is a metal element), and M+ is H+ or Li+.

Abstract: The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.

Abstract: The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.

Abstract: The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.

Abstract: The invention relates to an image sensor for use in the facsimile device, image reader, digital scanner and the like. In this image sensor, the photodiodes and blocking diodes formed on an insulating board are insulated by a transparent interlayer insulating film and are connected in series and opposite polarity by coupling electrodes through contact holes in the transparent interlayer insulating film. This image sensor features a high reading speed and a low dark output noise.

Abstract: An image reading apparatus and method in which a plurality of photoelectric energy converting elements disposed in a one-dimensional array is divided every m elements into n first blocks B.sub.1, B.sub.2, . . . , B.sub.n, driving voltages are applied sequentially to the units of m photoelectric energy converting elements in the first blocks B.sub.1, B.sub.2, . . . , B.sub.n, and the electrical signals of the photoelectric energy converting elements are read out. The drive side on which the driving voltage is sequentially applied to the above-mentioned divided n first blocks, B.sub.1, B.sub.2, . . . , B.sub.n is further divided every x first blocks into y second blocks C.sub.1, C.sub.2, . . . , C.sub.y, and are provided a first voltage application means which applies a first driving voltage (D1, D2, . . . , Dy) in sequence to the units of x first blocks B.sub.1, B.sub.2, . . . , B.sub.x in the second blocks C.sub.1, C.sub.2, . . . , C.sub.

Abstract: The invention seeks to reduce residual image in the vertical direction, which is the most significant drawback in the charge storage system, and further to permit increased speed of operation to be obtained.To this end, an image sensor of matrix drive type according to the invention comprises m by n diode pairs each including a photo- and a blocking diode PD and BD with the cathode electrodes thereof connected in series, the diode pairs constituting n blocks B.sub.1,B.sub.2 . . . , Bn each of m diode pairs. A clamp diode CD is connected to the juncture between the photo- and blocking diodes PD and BD in each diode pair to clamp the potential on the juncture and thus permit complete and quick charging of the capacitance of the photo-diode PD.

Abstract: The present invention relates to a strain sensor, particularly a strain sensor which detects a mechanical strain using the electric resistance change of a non-single crystalline semiconductor which is proportional to mechanical strain. The strain sensor in the present invention consists of a non-single crystalline semiconductor containing Si wherein the activation energy determined from the temperature dependency of the dark conductivity is under 15 meV. The strain sensor particularly suits an application to a mechanical strain measurement under a comparatively strong magnetic field.

Abstract: A temperature detector having a semiconductor layer which is a p-type or n-type semiconductor doped by addition of an impurity. The semi- semiconductor is completely amorphous, or substantially amorphous with the inclusion of microcrystals. The temperature detector has good sensitivity at a temperature of not more than 100 K, and has good linearity of the change of resistivity to the change of temperature over a wide range of temperature.