Patents by Inventor Yoichi Machii

Yoichi Machii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9520529
    Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: November 9, 2013
    Date of Patent: December 13, 2016
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20160359078
    Abstract: A composition for forming an n-type diffusion layer, comprising glass particles that comprise a donor element, a dispersing medium, and an organometallic compound; a method of forming an n-type diffusion layer; a method of producing a semiconductor substrate with n-type diffusion layer; and a method of producing a photovoltaic cell element.
    Type: Application
    Filed: August 20, 2014
    Publication date: December 8, 2016
    Applicant: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Tetsuya SATO, Masato YOSHIDA, Takeshi NOJIRI, Yasushi KURATA, Toranosuke ASHIZAWA, Yoichi MACHII, Mitsunori IWAMURO, Akihiro ORITA, Mari SHIMIZU, Elichi SATOU
  • Patent number: 9406834
    Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
    Type: Grant
    Filed: May 4, 2014
    Date of Patent: August 2, 2016
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Akihiro Orita, Masato Yoshida, Takeshi Nojiri, Yoichi Machii, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Toru Tanaka
  • Publication number: 20150214418
    Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 3, 2015
    Publication date: July 30, 2015
    Inventors: Yoichi MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20150214390
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 3, 2015
    Publication date: July 30, 2015
    Inventors: Yoichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuichiro ADACHI, Tetsuya SATO, Keiko KIZAWA
  • Publication number: 20150099352
    Abstract: A composition for forming an n-type diffusion layer includes a glass powder containing P2O5, SiO2 and CaO and a dispersion medium. An n-type diffusion layer and a photovoltaic cell element having an n-type diffusion layer are produced by applying the composition for forming an n-type diffusion layer on a semiconductor substrate and by subjecting the substrate to a thermal diffusion treatment.
    Type: Application
    Filed: July 17, 2012
    Publication date: April 9, 2015
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Mitsunori Iwamuro, Akihiro Orita, Shuichiro Adachi, Tetsuya Saito
  • Publication number: 20150017754
    Abstract: The invention provides composition for forming an n-type diffusion layer, the composition comprising a compound containing a donor element, a dispersing medium, and an organic filler; a method for producing a semiconductor substrate having an n-type diffusion layer; and a method for producing a photovoltaic cell element.
    Type: Application
    Filed: January 10, 2013
    Publication date: January 15, 2015
    Inventors: Tetsuya Sato, Masato Yoshida, Takeshi Nojiri, Toranosuke Ashizawa, Yasushi Kurata, Yoichi Machii, Mitsunori Iwamuro, Akihiro Orita, Mari Shimizu
  • Publication number: 20140242741
    Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
    Type: Application
    Filed: May 4, 2014
    Publication date: August 28, 2014
    Applicant: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Akihiro ORITA, Masato YOSHIDA, Takeshi NOJIRI, Yoichi MACHII, Mitsunori IWAMURO, Shuichiro ADACHI, Tetsuya SATO, Toru TANAKA
  • Patent number: 8748877
    Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: June 10, 2014
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Akihiro Orita, Masato Yoshida, Takeshi Nojiri, Yoichi Machii, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Toru Tanaka
  • Publication number: 20140120648
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: November 10, 2013
    Publication date: May 1, 2014
    Applicant: Hitachi Chemical Company, Ltd.
    Inventors: Yoichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuichiro ADACHI, Tetsuya SATO, Keiko KIZAWA
  • Publication number: 20140076396
    Abstract: The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu.
    Type: Application
    Filed: November 24, 2013
    Publication date: March 20, 2014
    Applicant: Hitachi Chemical Company, Ltd.
    Inventors: Tetsuya SATO, Masato YOSHIDA, Takeshi NOJIRI, Yoichi MACHII, Mitsunori IWAMURO, Akihiro ORITA
  • Publication number: 20140065761
    Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: November 9, 2013
    Publication date: March 6, 2014
    Applicant: Hitachi Chemical Company, Ltd.
    Inventors: Yoichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuichiro ADACHI, Tetsuya SATO, Keiko KIZAWA
  • Publication number: 20130078759
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 22, 2011
    Publication date: March 28, 2013
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20130071968
    Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 22, 2011
    Publication date: March 21, 2013
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20130025670
    Abstract: The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu.
    Type: Application
    Filed: July 24, 2012
    Publication date: January 31, 2013
    Inventors: Tetsuya SATO, Masato YOSHIDA, Takeshi NOJIRI, Yoichi MACHII, Mitsunori IWAMURO, Akihiro ORITA
  • Publication number: 20120313199
    Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
    Type: Application
    Filed: May 25, 2012
    Publication date: December 13, 2012
    Inventors: Akihiro Orita, Masato Yoshida, Takeshi Nojiri, Yoichi Machii, Mitsunori Iwamuro, Shuchiro Adachi, Tetsuya Sato, Toru Tanaka