Abstract: Novel 2,3-dihydro-indene derivatives having remarkable anti-inflammatory effects and represented by the following formula ##STR1## wherein R.sup.1 and R.sup.2 are each a hydrogen atom, halogen atom, nitro group, lower alkyl group or lower alkyloxy group with the proviso that R.sup.1 and R.sup.2 do not take a hydrogen atom at the same time, and n is an integer of 2-4.

Abstract: An antiallergic composition comprising, as the effective ingredient, a compound represented by the following general formula ##STR1## wherein R is n-butyl group or n-pentyl group, the compound being preferably supported by a carrier such as sugar, starch, gum arabic or calcium stearate.

Abstract: This invention concerns a so-called double-moat uni-surface type semiconductor device in which two concentric moats are provided in one main surface of the substrate and the edges of the two pn-junctions for blocking main circuit voltages applied to the device are exposed in the surfaces of the moats. Semiconductor layers having high impurity concentrations and serving as channel stoppers are formed on the semiconductor layers exposed in the one main surface of the substrate, contiguous to the moats and spaced apart from the pn-junctions, each high impurity concentration layer having the same conductivity type as the semiconductor layer on which it is formed. The moats are filled with surface passivating material.

Abstract: A semiconductor substrate comprises at the central portion a diode region which includes a P-type base layer, an N-type low impurity concentration layer and an N-type base layer and at the outer peripheral portion a thyristor region which includes an N-type emitter layer, a P-type base layer, an N-type low impurity concentration layer, an N-type base layer and a P-type emitter layer. The P-type base layer and the N-type emitter layer are in contact with a cathode electrode, the N-type base layer and the P-type emitter layer are in contact with an anode electrode, and the diode and thyristor regions are connected in anti-parallel. Contiguous to the outer periphery of the N-type base layer interposed between the N-type low impurity concentration layer and the P-type emitter layer is formed an N-type high impurity concentration region higher in impurity concentration than the N-type base layer.

Abstract: The present invention relates to the indoleacetic acid ester derivatives of the following general formula: ##STR1## WHEREIN N REPRESENTS AN INTEGER FROM ONE TO 3; R is selected from the group consisting of hydroxyl, halogen, trihalomethyl, alkoxy, acyloxy, substituted phenyl, pyridyl and substituted pyridyl. These compounds possess a high degree of pharmacological activities such as analgetic, anti-inflammatory and anti-pyretic activities as well as low side effects on the gastrointestinal tracts when given orally and topically, and therefore they may be useful as analgesics, anti-inflammatories and anti-pyretics for internal and external use.