Abstract: A photoconductive member comprises a support for photoconductive member, an interface layer comprising an amorphous material represented by any of the formulas:Si.sub.a N.sub.1-a (0.57<a<1) (1)(Si.sub.b N.sub.1-b).sub.c H.sub.1-c (0.6<b<1, 0.65.ltoreq.c<1) (2)(Si.sub.d N.sub.1-d).sub.e (X, H).sub.1-e (0.6<d<1, 0.8.ltoreq.e<1) (3)(wherein X represents a halogen atom),a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing at least one of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms.

Abstract: A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, a first amorphous layer exhibiting photoconductivity and comprising an amorphous material containing at least one member selected from the group consisting of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms, and a second amorphous layer containing an amorphous material represented by any of the formulas:Si.sub.a C.sub.1-a (0.4<a<1) . . . (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6 .ltoreq.c<1) . . . (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) . . . (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1) . . .

Abstract: A photoconductive layer comprises a support and an amorphous layer. The amorphous layer is photoconductive, comprises silicon as matrix and hydrogen and/or halogen, and has a layer region containing group III atoms which is distributed such that the distribution is continuous in the direction of layer thickness and said atoms are more enriched on the aforesaid support side than on the opposite side to the aforesaid support side in said layer.