Abstract: A compressor includes a shading motor as a power source, and is provided with a discharge port that discharges compressed air generated by driving the shading motor. The shading motor includes a stator that is made of a soft magnetic material and has an apparent volume of 78000 mm3 or less. A load reduction mechanism reduces a load applied to the shading motor by suppressing a pressure increase in the flow path over a period from a first time point at which the shading motor starts driving to a second time point at which the rotation speed of a rotor reaches a predetermined rotation speed.

Abstract: A nebulizer kit includes an atomizer generating an aerosol, and a particle sorting route communicating with the atomizer and sorting liquid particles in the aerosol to adjust a particle diameter distribution thereof, and guiding the aerosol to a discharge port. The particle sorting route includes a first particle sorting route with a uniform cross-sectional area in the first direction and a second particle sorting route with an inner end wall that curves from the first direction toward a second direction included in the same plane as the first direction. The first particle sorting route guides the aerosol to the second particle sorting route in the first direction, and the inner end wall of the second particle sorting route guides the aerosol in the second direction while aerosol particles with a certain particle diameter or more are attached thereto.

Abstract: A nebulizer kit includes a case body having a compressed air introduction tube, in an upper end portion of which a nozzle hole that expels compressed air is formed, a suction channel formation member that forms a suction channel for sucking a liquid toward the upper end portion and that forms an atomizing area in an exit region of the nozzle hole, and a flow channel formation member having an aerosol discharge port. The suction channel has a first suction channel extending upward along an outer circumferential surface of the compressed air introduction tube, and a second suction channel that extends from the first suction channel toward the nozzle hole at a leading end area of the compressed air introduction tube and has a liquid suction port that expels the liquid.

Abstract: A nebulizer kit includes an atomizer generating an aerosol, and a particle sorting route communicating with the atomizer and sorting liquid particles in the aerosol to adjust a particle diameter distribution thereof, and guiding the aerosol to a discharge port. The particle sorting route includes a first particle sorting route with a uniform cross-sectional area in the first direction and a second particle sorting route with an inner end wall that curves from the first direction toward a second direction included in the same plane as the first direction. The first particle sorting route guides the aerosol to the second particle sorting route in the first direction, and the inner end wall of the second particle sorting route guides the aerosol in the second direction while aerosol particles with a certain particle diameter or more are attached thereto.

Abstract: A nebulizer kit includes a case body having a compressed air introduction tube in an upper end portion of which a nozzle hole that expels compressed air is formed, a suction channel formation member that forms a suction channel for sucking a liquid toward the upper end portion and that forms an atomizing area in an exit region of the nozzle hole, and a flow channel formation member having an aerosol discharge port. The suction channel has a first suction channel extending upward along an outer circumferential surface of the compressed air introduction tube, and a second suction channel that extends from the first suction channel toward the nozzle hole at a leading end area of the compressed air introduction tube and has a liquid suction port that expels the liquid. An upper sloped surface region that slopes toward the suction channel is provided above the liquid suction port.

Abstract: A nebulizer kit includes a case body having a compressed air introduction tube in an upper end portion of which is a nozzle hole that expels compressed air, a suction channel formation member forming a suction channel for sucking liquid toward the upper end portion and forming an atomizing area in an exit region of the hole, and a flow channel formation member having an aerosol discharge port. The suction channel has first and second suction channels respectively extending upward along an outer circumferential surface of the tube and from the suction channel toward the hole at a leading end area of the tube and has a liquid suction port that expels the liquid. A particle segregating portion having a blade portion, whose orientation to the atomizing area is adjustable, is between the atomizing area and the port. The suction channel formation member is fixed to the case body.

Abstract: A nebulizer kit includes a case body having a compressed air introduction tube in an upper end portion of which a nozzle hole that expels compressed air is formed, a suction channel formation member that forms a suction channel for sucking a liquid toward the upper end portion and that forms an atomizing area in an exit region of the nozzle hole, and a flow channel formation member having an aerosol discharge port. The suction channel has a first suction channel extending upward along an outer circumferential surface of the compressed air introduction tube, and a second suction channel that extends from the first suction channel toward the nozzle hole at a leading end area of the compressed air introduction tube and has a liquid suction port that expels the liquid. An upper sloped surface region that slopes toward the suction channel is provided above the liquid suction port.

Abstract: A nebulizer kit includes a case body having a compressed air introduction tube, in an upper end portion of which a nozzle hole that expels compressed air is formed, a suction channel formation member that forms a suction channel for sucking a liquid toward the upper end portion and that forms an atomizing area in an exit region of the nozzle hole, and a flow channel formation member having an aerosol discharge port. The suction channel has a first suction channel extending upward along an outer circumferential surface of the compressed air introduction tube, and a second suction channel that extends from the first suction channel toward the nozzle hole at a leading end area of the compressed air introduction tube and has a liquid suction port that expels the liquid.

Abstract: A nebulizer kit includes a case body having a compressed air introduction tube in an upper end portion of which is a nozzle hole that expels compressed air, a suction channel formation member forming a suction channel for sucking liquid toward the upper end portion and forming an atomizing area in an exit region of the hole, and a flow channel formation member having an aerosol discharge port. The suction channel has first and second suction channels respectively extending upward along an outer circumferential surface of the tube and from the suction channel toward the hole at a leading end area of the tube and has a liquid suction port that expels the liquid. A particle segregating portion having a blade portion, whose orientation to the atomizing area is adjustable, is between the atomizing area and the port. The suction channel formation member is fixed to the case body.

Abstract: An underlying conductive film made of iridium and having a thickness of about 0.1 &mgr;m is formed in a contact hole formed in an insulating film covering a transistor formed in a substrate, except in the top portion of the contact hole. The underlying conductive film covers the sidewall portions of the contact hole and the top surface of the drain region but does not completely fill in the contact hole. A plug made of platinum is filled in the contact hole up to the top portion thereof. Over the contact hole of the insulating film, there is formed a capacitor composed of a lower electrode made of platinum, a capacitor insulating film made of SrBi2Ta2O9, and an upper electrode made of platinum in contact relation with the respective upper ends of the underlying conductive film and the plug.

Abstract: As a pretreatment of a substrate, a substrate of Si having the (111) surface orientation as a main surface is soaked in hydrofluoric acid, so as to form a H atomic layer for terminating dangling bonds on the main surface of the substrate. Then, the substrate is placed in a highly evacuated growth chamber in an MBE system, and a Ga molecular beam and a Se molecular beam are supplied onto the H atomic layer on the substrate, so as to grow a buffer layer of GaSe, that is, a van der Waals crystal. Next, with the supply of the Se molecular beam stopped, a N2 gas activated by using radio frequency or electron cyclotron resonance is supplied instead as a nitrogen source onto the buffer layer on the substrate, so as to form a semiconductor layer of GaN.

Abstract: An underlying conductive film made of iridium and having a thickness of about 0.1 &mgr;m is formed in a contact hole formed in an insulating film covering a transistor formed in a substrate, except in the top portion of the contact hole. The underlying conductive film covers the sidewall portions of the contact hole and the top surface of the drain region but does not completely fill in the contact hole. A plug made of platinum is filled in the contact hole up to the top portion thereof. Over the contact hole of the insulating film, there is formed a capacitor composed of a lower electrode made of platinum, a capacitor insulating film made of SrBi2Ta2O9, and an upper electrode made of platinum in contact relation with the respective upper ends of the underlying conductive film and the plug.

Abstract: The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.

Abstract: On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.

Abstract: The present invention relates to a bar code reading apparatus that is useful for recognizing by human eyes whether a light beam is being projected onto a bar code symbol. The bar code reading apparatus contains a first and second light source to radiate a first ray and a second visible ray, respectively. The second visible ray has higher visibility than first light beam for human eyes. As a result, an operator can easily recognize whether the light beams are projected onto a bar code symbol. Another bar code reading apparatus contains first and second photo detectors for receiving a first and a second reflected beam, respectively. With this arrangement two different bar code symbols can be simultaneously read by the bar code reading apparatus.

Abstract: In a II-VI group semiconductor laser, on an n type GaAs substrate, an n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnSe layer for constricting current. Multifilm reflecting mirrors, respectively constituted with a polycrystalline SiO.sub.2 layer and a polycrystalline TiO.sub.2 layer, for obtaining laser oscillation are provided on the p type ZnSe layer as well as on a surface of the n type ZnSe layer exposed by etching the GaAs substrate. Furthermore, a p type AuPd electrode and an n type AuGeNi electrode are respectively provided.

Abstract: According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0<x<0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline semiconductor on a substrate by: supplying a II element Zn onto the substrate by using a molecular beam from a ZnSe compound source and a molecular beam from a Zn elemental source; supplying a II element Cd onto the substrate by using a molecular beam from a CdSe compound source; and supplying a VI element Se onto the substrate by using a molecular beam from a ZnSe compound source.

Abstract: A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x<1, 0.ltoreq.y<1) and a quantum well layer made of Zn.sub.1-z Cd.sub.z Se (0.ltoreq.z<1) which is interposed between the first and the second light guiding layers, the light-emitting layer being interposed between the first and the second cladding layers; and a burying layer which is made of ZnMgSSe lattice-matching with the semiconductor substrate and formed on sides of the second cladding layer.

Abstract: A wavelength conversion device exhibiting an excellent wavelength conversion efficiency is provided by forming it in such a manner that an LiTaO.sub.3 substrate is subjected to a proton exchange treatment to form a proton-exchange layer before the proton-exchange layer is subjected to heat treatment to form a domain-inverted structure. Heat treatment is performed at a high temperature rising speed to prevent the thermal diffusion of the proton-exchange layer so that the expansion of the domain-inverted structure to be formed in the proton-exchange layer is restrained. As a result, a higher harmonic wave wavelength conversion device can be provided.