Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

Abstract: A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 ?m or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.

Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

Abstract: A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 &mgr;m or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.

Abstract: A quartz oscillator includes a base, a quartz thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the quartz thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a quartz oscillator.

Abstract: A single crystal thin film and a production method therefor are provided. A method for producing a crystal epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a crystal on the substrate. The single crystal thin film has excellent crystalinity, and optical properties.

Abstract: A crystal oscillator includes a base, a crystal thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the crystal thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a crystal oscillator.

Abstract: A single crystal thin film and a production method therefor are provided. A method for producing a crystal epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a crystal on the substrate. The single crystal thin film has excellent crystalinity, and optical properties.