Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

Abstract: A film-thickness measuring method capable of substantially extending a wavelength range of a spectrum of reflected light from a workpiece, and accurately measuring a film thickness is disclosed. The film-thickness measuring method includes: pressing a workpiece against a polishing pad, while rotating a polishing table that supports the polishing pad, to polish the workpiece; during the polishing of the workpiece, directing light to the workpiece from a liquid-seal sensor and a transparent-window sensor disposed in the polishing table and receiving reflected light from the workpiece by the liquid-seal sensor and the transparent-window sensor; and determining a film thickness of the workpiece based on a spectrum of the reflected light from the workpiece.

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract: A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers.

Abstract: Various methods of cleaning a substrate are provided. In one aspect, method of cleaning a substrate, comprising: holding and rotating a substrate by a substrate holder; and supplying a chemical liquid to a chemical liquid nozzle and supplying two fluids to a two-fluid nozzle while moving the chemical-liquid nozzle and the two-fluid nozzle radially outwardly from the center to the periphery of the substrate, wherein the distance of the chemical-liquid nozzle from a rotating axis of the substrate holder is longer than the distance of the two-fluid nozzle from the rotating axis of the substrate holder while the chemical-liquid nozzle and the two-fluid nozzle are moved radially outwardly from the rotating axis of the substrate holder.

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract: A polishing method capable of accurately determining a thickness of a polishing-target layer without being affected by noises is disclosed. The polishing method for polishing a polishing-target layer of a workpiece includes: rotating a polishing table supporting a polishing pad; polishing the polishing-target layer by pressing the workpiece against the polishing pad; irradiating the workpiece with light; receiving reflected light from the workpiece; measuring an intensity of the reflected light at each of wavelengths; generating a spectral waveform showing a relationship between the intensity and wavelength of the reflected light; performing a Fourier transform process on the spectral waveform to generate a frequency spectrum; moving a peak search range for the frequency spectrum according to a polishing time; determining a peak of the frequency spectrum within the peak search range; and determining a thickness of the polishing-target layer corresponding to the determined peak.

Abstract: An optical film-thickness measuring apparatus capable of eliminating an influence of a fluid flow on optical fiber cables when the fluid, such as pure water, is flowing through a through-hole of a polishing pad, and capable of achieving highly accurate measuring of a film thickness is disclosed. The optical film-thickness measuring apparatus includes: a light-emitting optical fiber cable coupled to a light source; a light-receiving optical fiber cable arranged to receive light reflected from the workpiece; a cable housing surrounding the light-emitting optical fiber cable and the light-receiving optical fiber cable; and a flow-passage structure defining a fluid passage adjacent to the light-emitting optical fiber cable and the light-receiving optical fiber cable. The light-emitting optical fiber cable and the light-receiving optical fiber cable are supported by at least one of the cable housing and the flow-passage structure.

Abstract: A polishing method capable of measuring a film thickness of a substrate, such as a semiconductor wafer, having various structural elements on its surface with high accuracy is disclosed. The polishing method includes: generating spectra of reflected lights from measurement points on a substrate; classifying the spectra based on a shape of each spectrum into primary spectra belonging to a first group and a secondary spectrum belonging to a second group; determining film thicknesses of the substrate from the primary spectra; and determining a film thickness at a measurement point corresponding to the secondary spectrum using the primary spectra or the film thicknesses.

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

Abstract: To measure thickness in a polishing treatment more efficiently. A substrate polishing apparatus comprises a rotatably configured polishing table provided with a sensor that outputs a signal related to a thickness, a rotatably configured polishing head that faces the polishing table, a substrate being attachable to a face of the polishing head that faces the polishing table, and a controller. The controller acquires a signal from the sensor when the sensor passes over a surface to be polished of the substrate, specifies an orbit of the sensor with respect to the substrate on a basis of a profile of the signal, calculates a thickness of the substrate at each point on the orbit on a basis of the signal, and creates a thickness map on a basis of the calculated thickness at each point on a plurality of orbits of the sensor.

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract: Various methods of cleaning a substrate are provided. In one aspect, method of cleaning a substrate, comprising: holding and rotating a substrate by a substrate holder; and supplying a chemical liquid to a chemical liquid nozzle and supplying two fluids to a two-fluid nozzle while moving the chemical-liquid nozzle and the two-fluid nozzle radially outwardly from the center to the periphery of the substrate, wherein the distance of the chemical-liquid nozzle from a rotating axis of the substrate holder is longer than the distance of the two-fluid nozzle from the rotating axis of the substrate holder while the chemical-liquid nozzle and the two-fluid nozzle are moved radially outwardly from the rotating axis of the substrate holder.

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract: According to one aspect, a substrate processing apparatus is provided. The substrate processing apparatus includes a table provided with a substrate holding surface for holding a substrate, a pad for processing the substrate held on the table, a head for holding the pad, an actuator for moving the head in a direction perpendicular to the substrate holding surface of the table, and a mechanical stopper device for stopping a movement of the head in the direction perpendicular to the substrate holding surface.

Abstract: The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate.

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Abstract: A polishing apparatus which can measure a film thickness with high accuracy without affecting a polishing rate of a wafer is disclosed. The polishing apparatus includes: a polishing head configured to press a wafer against a polishing pad; an illuminating fiber having a distal end disposed in a flow passage formed in the polishing table; a spectrometer configured to resolve reflected light from the wafer in accordance with wavelength and measure an intensity of the reflected light at each of wavelengths; a light-receiving fiber having a distal end disposed in the flow passage; a liquid supply line communicating with the flow passage; a gas supply line communicating with the flow passage; a liquid supply valve attached to the liquid supply line; a gas supply valve attached to the gas supply line; and an operation controller configured to control operations of the liquid supply valve and the gas supply valve.

Abstract: A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing method includes: rotating a polishing table that supports a polishing pad; pressing the surface of the wafer against the polishing pad; obtaining a plurality of film-thickness signals from a film thickness sensor during a latest predetermined number of revolutions of the polishing pad, the film thickness sensor being installed in the polishing table; determining a plurality of measured film thicknesses from the plurality of film-thickness signals; determining an estimated film thickness at a topmost portion of the raised portion based on the plurality of measured film thicknesses; and monitoring polishing of the wafer based on the estimated film thickness at the topmost portion of the raised portion.