Abstract: Bays 100, 200, 300 . . . are connected to an inter-bay transfer line 400 via bay stockers 130, 230, 330 . . . , respectively. The bay 100 is, in this embodiment, composed of a single wafer transfer line 120 having a looped planar shape and processing equipments 101–106 arranged side by side along the longitudinal transfer direction of the transfer line (direction crossing the transfer direction of inter-bay transfer line 400). Processing equipments 101–103 are arranged side by side along one side of the transfer line 120, and the remaining processing equipments 104–106 are arranged side by side along the other side of the transfer line 120. The processing equipments 101–106 are equipped with transfer robots 11–16, respectively. Moreover, processing equipments 101–106 are each equipped with a chamber (not shown) for processing wafers W one by one (single wafer processing chamber).

Abstract: An apparatus for creating a conductive damascene by filling copper in a plug portion formed on an insulating film, the apparatus comprising an etching chamber 151A for etching a low-k material, a vacuum transfer chamber 153 for transferring in vacuum a sample being etched, a receiving means for receiving the transferred sample, a voltage application means, a copper barrier processing chamber 151B for performing a copper barrier process by reforming the surface of the sample through carbonizing process, nitriding process, brominating process, boride-forming process, reduction process, amorphous-forming process or a combination thereof, which is realized by making ions accelerated by voltage or neutral particles obtained by diselectrifying the accelerated ions collide against the etched surface, and a high vacuum processing chamber 151C where copper is filled in the plug portion having the etched surface with a copper barrier.

Abstract: An apparatus for creating a conductive damascene by filling copper in a plug portion formed on an insulating film, the apparatus comprising an etching chamber 151A for etching a low-k material, a vacuum transfer chamber 153 for transferring in vacuum a sample being etched, a receiving means for receiving the transferred sample, a voltage application means, a copper barrier processing chamber 151B for performing a copper barrier process by reforming the surface of the sample through carbonizing process, nitriding process, brominating process, boride-forming process, reduction process, amorphous-forming process or a combination thereof, which is realized by making ions accelerated by voltage or neutral particles obtained by diselectrifying the accelerated ions collide against the etched surface, and a high vacuum processing chamber 151C where copper is filled in the plug portion having the etched surface with a copper barrier.

Abstract: A system and method of manufacturing wafers are provided suitable for a semiconductor manufacturing system and a method thereof capable of shortening the processing period composed of a series of processes applied to objects to be processed, mainly carry out processes and conveyance peace by peace, and which can manufacture even various kings of products. The system is provided with a plurality of processing units each having therein a conveying mechanism, and is provided therein with a conveyer device for conveying the objects to be processed to the processing units.

Abstract: A system and method of manufacturing wafers are provided suitable for a semiconductor manufacturing system and a method thereof capable of shortening the processing period composed of a series of processes applied to objects to be processed, mainly carry out processes and conveyance peace by peace, and which can manufacture even various kings of products. The system is provided with a plurality of processing units each having therein a conveying mechanism, and is provided therein with a conveyer device for conveying the objects to be processed to the processing units.

Abstract: An apparatus for creating a conductive damascene by filling copper in a plug portion formed on an insulating film, the apparatus comprising an etching chamber 151A for etching a low-k material, a vacuum transfer chamber 153 for transferring in vacuum a sample being etched, a receiving means for receiving the transferred sample, a voltage application means, a copper barrier processing chamber 151B for performing a copper barrier process by reforming the surface of the sample through carbonizing process, nitriding process, brominating process, boride-forming process, reduction process, amorphous-forming process or a combination thereof, which is realized by making ions accelerated by voltage or neutral particles obtained by diselectrifying the accelerated ions collide against the etched surface, and a high vacuum processing chamber 151C where copper is filled in the plug portion having the etched surface with a copper barrier.

Abstract: Bays 100, 200, 300 . . . are connected to an inter-bay transfer line 400 via bay stockers 130, 230, 330 . . . , respectively. The bay 100 is, in this embodiment, composed of a single wafer transfer line 120 having a looped planar shape and processing equipments 101-106 arranged side by side along the longitudinal transfer direction of the transfer line (direction crossing the transfer direction of inter-bay transfer line 400). Processing equipments 101-103 are arranged side by side along one side of the transfer line 120, and the remaining processing equipments 104-106 are arranged side by side along the other side of the transfer line 120. The processing equipments 101-106 are equipped with transfer robots 11-16, respectively. Moreover, processing equipments 101-106 are each equipped with a chamber (not shown) for processing wafers W one by one (single wafer processing chamber).

Abstract: A system and method of manufacturing wafers are provided suitable for a semiconductor manufacturing system and a method thereof capable of shortening the processing period composed of a series of processes applied to objects to be processed, mainly carry out processes and conveyance peace by peace, and which can manufacture even various kings of products. The system is provided with a plurality of processing units each having therein a conveying mechanism, and is provided therein with a conveyer device for conveying the objects to be processed to the processing units.