Abstract: A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 ?m×1 ?m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70?BA30)/(BD70?BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Abstract: A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 ?m×1 ?m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70?BA30)/(BD70?BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Abstract: A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 ?m×1 ?m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70-BA30)/(BD70-BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Abstract: A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 ?m×1 ?m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70-BA30)/(BD70-BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Abstract: Provided is a conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 ?m×1 ?m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70?BA30)/(BD70?BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Abstract: Provided is a conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 ?m×1 ?m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70?BA30)/(BD70?BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Abstract: A reflective mask and a reflective mask blank that can form a fine mask pattern with high accuracy in shape, achieve a sufficient contrast in a pattern inspection, and enable a pattern transfer with high accuracy. On a substrate (11), a multilayer reflective film (12) for reflecting an exposure light, a buffer layer (13), and an absorber layer for absorbing the exposure light are successively deposited in this order. This absorber layer has a layered structure composed of an uppermost layer (15) and a lower layer (14) other than it. The uppermost layer (15) exhibits a reflectance of 20% or less with respect to a light having an inspection wavelength for use in an inspection of a pattern formed in the absorber layer and further is formed of an inorganic material having a resistance against an etching condition in forming a pattern in the lower layer.

Abstract: A reflective mask and a reflective mask blank that can form a fine mask pattern with high accuracy in shape, achieve a sufficient contrast in a pattern inspection, and enable a pattern transfer with high accuracy. On a substrate (11), a multilayer reflective film (12) for reflecting an exposure light, a buffer layer (13), and an absorber layer for absorbing the exposure light are successively deposited in this order. This absorber layer has a layered structure composed of an uppermost layer (15) and a lower layer (14) other than it. The uppermost layer (15) exhibits a reflectance of 20% or less with respect to a light having an inspection wavelength for use in an inspection of a pattern formed in the absorber layer and further is formed of an inorganic material having a resistance against an etching condition in forming a pattern in the lower layer.

Abstract: A reflective mask and a reflective mask blank that can form a fine mask pattern with high accuracy in shape, achieve a sufficient contrast in a pattern inspection, and enable a pattern transfer with high accuracy. On a substrate (11), a multilayer reflective film (12) for reflecting an exposure light, a buffer layer (13), and an absorber layer for absorbing the exposure light are successively deposited in this order. This absorber layer has a layered structure composed of an uppermost layer (15) and a lower layer (14) other than it. The uppermost layer (15) exhibits a reflectance of 20% or less with respect to a light having an inspection wavelength for use in an inspection of a pattern formed in the absorber layer and further is formed of an inorganic material having a resistance against an etching condition in forming a pattern in the lower layer.

Abstract: A reflective mask and a reflective mask blank that can form a fine mask pattern with high accuracy in shape, achieve a sufficient contrast in a pattern inspection, and enable a pattern transfer with high accuracy. On a substrate (11), a multilayer reflective film (12) for reflecting an exposure light, a buffer layer (13), and an absorber layer for absorbing the exposure light are successively deposited in this order. This absorber layer has a layered structure composed of an uppermost layer (15) and a lower layer (14) other than it. The uppermost layer (15) exhibits a reflectance of 20% or less with respect to a light having an inspection wavelength for use in an inspection of a pattern formed in the absorber layer and further is formed of an inorganic material having a resistance against an etching condition in forming a pattern in the lower layer.