Abstract: To prevent deterioration of current detection accuracy due to a difference in deterioration between a main MOS and a sense MOS. The load drive device includes a main MOS (101) for supplying a load current to a load, a sense MOS (102) to be used for detection of the load current, and an equalizer circuit (110) and a switch (120) which are provided in parallel between the source terminal of the main MOS and the source terminal of the sense MOS. The drain terminal of the main MOS and the drain terminal of the sense MOS have a common connection, and when a current is detected, the terminal voltage of the main MOS and the terminal voltage of the sense MOS are equalized by the equalizer circuit, and the switch is opened. When a current is not detected, the equalizer circuit is stopped and the switch short-circuits the source terminal of the main MOS and the source terminal of the sense MOS.

Abstract: Provided is a power conversion device on which an IGBT power module that includes a main IGBT and a current sense IGBT in the same semiconductor chip is mounted, wherein the power conversion device is a high-performance and highly reliable power conversion device capable of accurately estimating a main current flowing through the main IGBT using a sense current in an entire operation region of the power conversion device. A power conversion device includes: a first IGBT through which a main current flows; a second IGBT which is disposed on the same semiconductor substrate as the first IGBT and through which a sense current flows; and a measurement device which calculates the main current based on the sense current, wherein the measurement device selects a method of calculating the main current corresponding to a current value of the sense current.

Abstract: There is a problem that an area of a principal current cell is reduced by an area of a bonding pad wiring layer for a sub-cell. A source electrode 9b of a current detection cell 22 is electrically connected to a bonding pad wiring layer 12 formed on an interlayer insulating film 10 via a wiring layer contact 11. The bonding pad wiring layer 12 is formed with respect to a source electrode 9a of a principal current cell 21 so as to cover a part of the source electrode 9a via the interlayer insulating film 10. As a result, the source electrode 9b is miniaturized, and a size of the source electrode 9b is made substantially equal to a size of the current detection cell 22. Therefore, the current detection cell 22 and the principal current cell 21 are disposed close to each other.

Abstract: Poor opening is detected with certainty and reliability with respect to a ground line of an integrated circuit device regardless of the connection state of a load and the operating state of a drive circuit. In an integrated circuit device 10, a drive circuit 30 switches between conduction and interruption of a load current using switch elements 40 and 45. The ground line 31 is grounded via the GND terminal 32 to the common ground provided outside the integrated circuit device 10 and is connected to the drive circuit 30. The ground line 21 is grounded to the common ground via the GND terminal 22 and is connected to the control circuit 20. The diagnostic current supply circuit 90 supplies a predetermined diagnostic current to the ground line 31. The rectifying elements 61 and 62 are connected between the ground line 21 and the ground line 31.

Abstract: Provided is a power conversion device capable of observing a chip temperature with high accuracy without increasing a cost of the power conversion device mounted with a current sense element for observing a main current of a power device. A main control MOSFET 11, a current MOSFET 12, and a diode 13 connected to a source electrode 8 of the main control MOSFET 11 and a source electrode 9 of the current MOSFET 12 are mounted in a chip of a power device, a temperature measurement circuit 3 is connected to the source electrode 9 of the current MOSFET 12, and when the main control MOSFET 11 is in an off state, a forward current (If) is caused to flow through the diode 13, and an anode potential is observed to measure the chip temperature.

Abstract: The present invention maintains the accuracy of a reference current used in a functional circuit. Disclosed is a current generator circuit including a functional circuit and a diagnostic circuit. The functional circuit uses a reference current. The diagnostic circuit diagnoses the reference current in accordance with a comparison result obtained from comparison between the period of a periodic signal generated based on the reference current and the period of a reference clock inputted from the outside.

Abstract: Achieved is a load drive device capable of suppressing local concentration of temperature at the time of absorbing a counter electromotive force of an inductive load while suppressing a size of a power transistor. The load drive device includes a first transistor connected between a first control electrode and an inductive load. Further, the load drive device includes an active clamp circuit that becomes conductive when a terminal voltage of a second control electrode between the first transistor and the inductive load exceeds a threshold. Furthermore, the load drive device includes a second transistor connected to the second control electrode and connected in parallel to the first transistor.

Abstract: There is a problem that an area of a principal current cell is reduced by an area of a bonding pad wiring layer for a sub-cell. A source electrode 9b of a current detection cell 22 is electrically connected to a bonding pad wiring layer 12 formed on an interlayer insulating film 10 via a wiring layer contact 11. The bonding pad wiring layer 12 is formed with respect to a source electrode 9a of a principal current cell 21 so as to cover a part of the source electrode 9a via the interlayer insulating film 10. As a result, the source electrode 9b is miniaturized, and a size of the source electrode 9b is made substantially equal to a size of the current detection cell 22. Therefore, the current detection cell 22 and the principal current cell 21 are disposed close to each other.

Abstract: An eye imaging device including a housing with an opening that can be in contact with a head of an observer, a first photographic optical system arranged in the housing and configured to image a left eyeball of the observer from a side, a second photographic optical system arranged in the housing opposite to the first photographic optical system and configured to image a right eyeball of the observer from a side, a third photographic optical system arranged slidable in the housing in a direction in which the first photographic optical system and the second photographic optical system face each other and configured to image the left eyeball and the right eyeball of the observer from a front, and a storage unit configured to store images captured by the first photographic optical system, the second photographic optical system, and the third photographic optical system is provided.

Abstract: Provided is a novel power conversion device that enables estimation of a temperature of a power device without using a temperature sensing diode and can accurately estimate a temperature and a current of a current sensing element that observes a main current. A measurement voltage (Vref) is applied between source terminals (31s and 49s) of a main control element 31 and a current sensing element 49 in a state in which the main control element 31 and the current sensing element 49 are turned off, and a temperature of a power device 30 is estimated from a current (Ib) flowing between the source terminals (31s and 49s) of the main control element 31 and the current sensing element 49 at the time of the application by using the fact that a resistance value of a semiconductor substrate between the source terminals of the main control element 31 and the current sensing element 49 has temperature dependency.

Abstract: Provided is a current control device capable of continuing feedback control for a solenoid in normal feedback control while preventing occurrence of an unintended valve operation due to flow of a reverse current.

Abstract: In a semiconductor device including a current mirror circuit, a highly reliable semiconductor device that reduces a variation in a mirror ratio of the current mirror circuit and suppresses a change with time in a pairing property of elements can be provided.

Abstract: Provided is an internal combustion engine ignition device capable of preventing an output signal level of a drive circuit from changing sharply when shifting from a normal ignition operation mode to a protection operation mode while reducing the cost of dedicated components and the like. An internal combustion engine ignition device of the present invention includes a first differential circuit for outputting a drive signal in a first mode and a second differential circuit for outputting a drive signal in a second mode, where the first differential circuit and the second differential circuit each include a transistor and are configured such that a drive current for supplying the drive signal flows through the transistor which is common between the first mode and the second mode.

Abstract: In a semiconductor device equipped with a current mirror circuit, a highly reliable semiconductor device capable of suppressing a change in a mirror ratio of the current mirror circuit over time is provided. A current mirror circuit that includes a first MOS transistor and a plurality of MOS transistors paired with the first MOS transistor, and a plurality of wiring layers formed on an upper layer of the MOS transistor are provided. The plurality of wiring layers are arranged such that wiring patterns have the same shape within a predetermined range from an end of a channel region of each of the first MOS transistor and the plurality of MOS transistors.

Abstract: To prevent deterioration of current detection accuracy due to a difference in deterioration between a main MOS and a sense MOS. The load drive device includes a main MOS (101) for supplying a load current to a load, a sense MOS (102) to be used for detection of the load current, and an equalizer circuit (110) and a switch (120) which are provided in parallel between the source terminal of the main MOS and the source terminal of the sense MOS. The drain terminal of the main MOS and the drain terminal of the sense MOS have a common connection, and when a current is detected, the terminal voltage of the main MOS and the terminal voltage of the sense MOS are equalized by the equalizer circuit, and the switch is opened. When a current is not detected, the equalizer circuit is stopped and the switch short-circuits the source terminal of the main MOS and the source terminal of the sense MOS.

Abstract: To provide an ignition control device of an internal combustion engine capable of reducing the number of adjustment steps required for adjustment such as matching of a MOS gate voltage or the like without being affected by device variation. A detection voltage is generated on the basis of a primary current flowing through a current detection resistor having a positive temperature dependent characteristic. A reference voltage is generated by a potential difference between a base and an emitter of a first bipolar transistor circuit and a multiple type second bipolar transistor circuit in which a plurality of bipolar transistors are connected in parallel, and a resistance value of a first resistor connected to the emitter side of the plurality of the bipolar transistor circuit, on the basis of a current having a positive temperature dependent characteristic similar to the current detection resistor.

Abstract: It is made possible to control ignition appropriately. An ignition device 1 for an internal combustion engine includes a spark coil 50 including: a primary side coil 51 connected to a direct current power supply 40 and a secondary side coil 52 magnetically connected to the primary side coil 51 and connected to an ignition plug 60; a switch element 30 that performs switching between energization and interruption of primary current I1 to the primary side coil 51; and a switch element controlling circuit 20 that controls the switch element 30 on the basis of an ignition controlling signal 51 supplied from an ECU 10. A turn-on delay adjustment circuit 22 that delays a control timing of the switch element 30 is disposed between the ECU 10 and the switch element 30 such that first resonance noise generated due to interruption of the primary current I1 to the primary side coil 51 is reduced.

Abstract: A semiconductor device obtains high current ratio accuracy by eliminating an influence of plasma charging using a MOS-type transistor in which a channel region is isolated and separated from a semiconductor substrate. In a current mirror circuit in which both of a well of a NMOS-type transistor that generates a bias and a well of a NMOS-type transistor that receives the bias are formed insulated and separated from a semiconductor substrate, a connection circuit is connected between gate electrodes and wells of NMOS-type transistors without through the semiconductor substrate, and the connection circuit makes the gate electrodes and the wells in an electrically short-circuited state during manufacturing of the current mirror circuit, and makes the gate electrodes and the wells in a disconnected state in at least one direction during a mounting operation.

Abstract: There is provided an electronic control unit capable of detecting an abnormality of a dark current while suppressing increase in the size of a circuit. The electronic control unit includes a control unit that operates with a current supplied via a power-supply input terminal from a battery, and a diode arranged on a power supply path connecting the power-supply input terminal with the control unit and serving as a reverse connection protection element that prevents a reverse current when the battery is reversely connected to the power-supply input terminal, and detects an abnormality of a dark current flowing through the diode based on a voltage difference between a voltage on the power-supply input terminal side of the diode and a voltage on the control unit side.

Abstract: It is made possible to control ignition appropriately. An ignition device 1 for an internal combustion engine includes a spark coil 50 including: a primary side coil 51 connected to a direct current power supply 40 and a secondary side coil 52 magnetically connected to the primary side coil 51 and connected to an ignition plug 60; a switch element 30 that performs switching between energization and interruption of primary current I1 to the primary side coil 51; and a switch element controlling circuit 20 that controls the switch element 30 on the basis of an ignition controlling signal 51 supplied from an ECU 10. A turn-on delay adjustment circuit 22 that delays a control timing of the switch element 30 is disposed between the ECU 10 and the switch element 30 such that first resonance noise generated due to interruption of the primary current I1 to the primary side coil 51 is reduced.