Abstract: In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrode 31 is provided at a lower vertical position than an extraction gate electrode 13 so its opening inner peripheral edge 31e faces a position near an emitter tip 11tp. The vertical position of the opening inner peripheral edge 31e of the aberration suppressor electrode 31 is made lower than the vertical position of the emitter tip 11tp. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrode 31 that is a lower voltage than the potential of the emitter 11 and controls equipotential lines near the emitter tip 11tp to make them parallel.

Abstract: A field emission electron source for emitting electrons under applied electric field includes a cold cathode having molecules of an aromatic compound vapor-deposited thereon at a pointed end of said cold cathode.

Abstract: In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrode 31 is provided at a lower vertical position than an extraction gate electrode 13 so its opening inner peripheral edge 31e faces a position near an emitter tip 11tp. The vertical position of the opening inner peripheral edge 31e of the aberration suppressor electrode 31 is made lower than the vertical position of the emitter tip 11tp. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrode 31 that is a lower voltage than the potential of the emitter 11 and controls equipotential lines near the emitter tip 11tp to make them parallel.

Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

Abstract: A field emission electron source for emitting electrons under applied electric field includes a cold cathode having molecules of an aromatic compound vapor-deposited thereon at a pointed end of said cold cathode.

Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

Abstract: An inspection technique for enabling an inspection on a wafer at an early stage during a wafer process. A wafer in a process is irradiated with an electron beam a plurality of times at predetermined intervals under a condition that a junction is backward biased, and secondary electron signals are monitored, so as to evaluate relax time characteristic of a backward bias potential in a p-n junction. Since the potential in the p-n junction decreases according to the intensity of a backward bias current in intermittent time, a backward bias current can be specified from an intensity signal interrelated with the number of secondary electron signals, that is, a potential contrast image on the basis of image information.

Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

Abstract: Provided is an inspection technique of a semiconductor device, enabling an inspection on a wafer being in a process, which cannot be carried out by a conventional technique, to be performed at an early stage, and capable of promptly grasping a problem with accuracy and taking a countermeasure on a manufacturing process immediately. A wafer being in a process is irradiated with an electron beam a plurality of times at predetermined intervals under a condition that a junction is backward biased, and secondary electron signals are monitored, thereby evaluating relax time characteristic of a backward bias potential in a pn junction. Since the potential in the pn junction decreases according to the intensity of a backward bias current in intermittent time, a backward bias current can be specified from a luminance signal of a potential contrast image.

Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.