Patents by Inventor Yoichiro Niitsu

Yoichiro Niitsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020158306
    Abstract: A first semiconductor device includes a first conductive layer, a second conductive layer located above or below the first conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, a spiral inductor having a spiral pattern that is formed in the first conductive layer, and an electromagnetic wave shield formed in a plane shape in the second conductive layer. The electromagnetic wave shield is grounded or connected to a constant voltage source and is located above or below the spiral inductor. Furthermore the first semiconductor device includes an opening formed in the electromagnetic wave shield. The opening is located in a region corresponding to a region above or below a central region of the spiral pattern of the spiral inductor.
    Type: Application
    Filed: December 26, 2001
    Publication date: October 31, 2002
    Inventor: Yoichiro Niitsu