Patents by Inventor Yoichiro Ouchi
Yoichiro Ouchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7589001Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: GrantFiled: September 29, 2006Date of Patent: September 15, 2009Assignee: Mitsubishi Chemical CorporationInventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Patent number: 7504324Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: GrantFiled: September 29, 2006Date of Patent: March 17, 2009Assignee: Mitsubishi Chemical CorporationInventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Patent number: 7179667Abstract: As shown in FIG. 1(a), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in FIG. 1(b), a crystal having a facet plane is grown in a convex part, and a crystal is also grown in a concave part. When the crystal growth is continued, the films grown from the convex part and the concave part are joined in time to cover a concavo-convex surface and become flat as shown in FIG. 1(c). In this case, an area having a low a dislocation density is formed in the upper part of the convex part where facet plane was formed, and the prepared film has high quality.Type: GrantFiled: September 17, 2001Date of Patent: February 20, 2007Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Hiroaki Okagawa, Kazuyuki Tadatomo, Yoichiro Ouchi, Takashi Tsunekawa
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Publication number: 20070026643Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: ApplicationFiled: September 29, 2006Publication date: February 1, 2007Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Publication number: 20070026644Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: ApplicationFiled: September 29, 2006Publication date: February 1, 2007Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Patent number: 7115486Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: GrantFiled: May 11, 2004Date of Patent: October 3, 2006Assignee: Mitsubishi Cable Industries Ltd.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Patent number: 7053420Abstract: Concaves and convexes 1a are formed by processing the surface layer of a first layer 1, and second layer 2 having a different refractive index from the first layer is grown while burying the concaves and convexes (or first crystal 10 is grown as concaves and convexes on crystal layer S to be the base of the growth, and second crystal 20 is grown, which has a different refractive index from the first crystal). After forming these concavo-convex refractive index interfaces 1a (10a), an element structure, wherein semiconductor crystal layers containing a light-emitting layer A are laminated, is formed. As a result, the light in the lateral direction, which is generated in the light-emitting layer changes its direction by an influence of the concavo-convex refractive index interface and heads toward the outside.Type: GrantFiled: March 20, 2002Date of Patent: May 30, 2006Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Takashi Tsunekawa
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Patent number: 6940098Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: GrantFiled: March 15, 2000Date of Patent: September 6, 2005Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Publication number: 20040206299Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: ApplicationFiled: May 11, 2004Publication date: October 21, 2004Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Patent number: 6794210Abstract: The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.Type: GrantFiled: November 7, 2003Date of Patent: September 21, 2004Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Yoichiro Ouchi, Hiroaki Okagawa, Masahiro Koto, Kazuyuki Tadatomo
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Publication number: 20040113166Abstract: Concaves and convexes 1a are formed by processing the surface layer of a first layer 1, and second layer 2 having a different refractive index from the first layer is grown while burying the concaves and convexes (or first crystal 10 is grown as concaves and convexes on crystal layer S to be the base of the growth, and second crystal 20 is grown, which has a different refractive index from the first crystal). After forming these concavo-convex refractive index interfaces 1a (10a), an element structure, wherein semiconductor crystal layers containing a light-emitting layer A are laminated, is formed. As a result, the light in the lateral direction, which is generated in the light-emitting layer changes its direction by an influence of the concavo-convex refractive index interface and heads toward the outside.Type: ApplicationFiled: December 9, 2003Publication date: June 17, 2004Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Takashi Tsunekawa
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Publication number: 20040094084Abstract: The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.Type: ApplicationFiled: November 7, 2003Publication date: May 20, 2004Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Yoichiro Ouchi, Hiroaki Okagawa, Masahiro Koto, Kazuyuki Tadatomo
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Publication number: 20040056258Abstract: As an embodiment of the element structure, a structure including, from the downside, a sapphire C-plane substrate 1, a GaN buffer layer 11 grown at a low temperature, an un-doped GaN layer 12, an Si-doped n-GaN contact layer 21, a light emitting layer 3 of a multiple quantum well structure (MQW) having plural well layers, an Mg-doped p-AlGaN cladding layer 22, and an Mg-doped p-GaN contact layer 23 is mentioned. The above-mentioned light emitting layer 3 is capable of multi-wavelength light emission by a multi-layer structure emitting light having at least two peaks in an emission spectrum, which is achieved by, for example, forming plural groups having different band gaps of the well layer. As a result, a light having plural wavelengths is emitted from a single light emitting layer, and by simply injecting current into a pair of p-type and n-type electrodes, a light emitting element emitting multicolor light, particularly white light, can be provided.Type: ApplicationFiled: October 9, 2003Publication date: March 25, 2004Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Takashi Tsunekawa
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Publication number: 20040048471Abstract: As shown in FIG. 1(a), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in FIG. 1(b), a crystal having a facet plane is grown in a convex part, and a crystal is also grown in a concave part. When the crystal growth is continued, the films grown from the convex part and the concave part are joined in time to cover a concavo-convex surface and become flat as shown in FIG. 1(c). In this case, an area having a low a dislocation density is formed in the upper part of the convex part where facet plane was formed, and the prepared film has high quality.Type: ApplicationFiled: April 17, 2003Publication date: March 11, 2004Inventors: Hiroaki Okagawa, Kazuyuki Tadatomo, Yoichiro Ouchi, Takashi Tsunekawa
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Patent number: 6700179Abstract: The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.Type: GrantFiled: December 18, 2001Date of Patent: March 2, 2004Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Yoichiro Ouchi, Hiroaki Okagawa, Masahiro Koto, Kazuyuki Tadatomo