Patents by Inventor Yoichiro Shimura

Yoichiro Shimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • X-ray detector
    Patent number: 7554092
    Abstract: An X-ray detector for detecting X rays includes a semiconductor for generating electric charges therein upon X-ray incidence, and electrodes formed on opposite sides of the semiconductor for application of a predetermined bias voltage. The semiconductor is amorphous selenium (a-Se) doped with a predetermined quantity of an alkali metal.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: June 30, 2009
    Assignees: Shimadzu Corporation, Shindengen Electric Manufacturing Co., Ltd., Shindengen Sensor Device Co., Ltd.
    Inventors: Kenji Sato, Toshiyuki Sato, Takayuki Nakayama, Yoichiro Shimura, Kazuhiko Shima
  • Radiation detector
    Patent number: 7233003
    Abstract: The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 ?. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 ? or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.
    Type: Grant
    Filed: September 17, 2004
    Date of Patent: June 19, 2007
    Assignees: Shimadzu Corporation, Shindengen Electric Manufacturing Co., Ltd, Shindengen Sensor Device Co., Ltd
    Inventors: Koji Watadani, Kenji Sato, Yoichiro Shimura, Hideo Tsuruta
  • Radiation detector
    Publication number: 20050061987
    Abstract: The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 ?. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 ? or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.
    Type: Application
    Filed: September 17, 2004
    Publication date: March 24, 2005
    Inventors: Koji Watadani, Kenji Sato, Yoichiro Shimura, Hideo Tsuruta
  • X-ray detector
    Publication number: 20030223534
    Abstract: An X-ray detector for detecting X rays includes a semiconductor for generating electric charges therein upon X-ray incidence, and electrodes formed on opposite sides of the semiconductor for application of a predetermined bias voltage. The semiconductor is amorphous selenium (a-Se) doped with a predetermined quantity of an alkali metal.
    Type: Application
    Filed: April 17, 2003
    Publication date: December 4, 2003
    Inventors: Kenji Sato, Toshiyuki Sato, Takayuki Nakayama, Yoichiro Shimura, Kazuhiko Shima
  • X-ray detection plate and X-ray detector
    Patent number: 6642534
    Abstract: It is an object of the invention to improve the quality of images obtained by an X-ray detector. A charge transport layer 13 mainly consisted of diantimony trisulfide, an X-ray detection layer 14 mainly consisted of amorphous selenium and a second electrode film 15 are formed in the same order on the surface of a first electrode film 12 provided on a substrate 11. A voltage whose polarity is positive at the first electrode film 12 and negative at the second electrode film 15 is applied, and the surface of the second electrode film 15 is irradiated with an X-ray. Then, carriers generated in the X-ray detection layer 14 are collected by the first and second electrode films.
    Type: Grant
    Filed: March 23, 2001
    Date of Patent: November 4, 2003
    Assignees: Shindengen Electric Manufacturing Co., Ltd., Yamanashi Electronics Co., Ltd., Shimadzu Corporation
    Inventors: Kazuhiko Shima, Masahito Sato, Naoki Uchida, Yoichiro Shimura, Kenji Sato, Hidetoshi Kishimoto
  • X-ray detection plate and X-ray detector
    Publication number: 20010032942
    Abstract: It is an object of the invention to improve the quality of images obtained by an X-ray detector.
    Type: Application
    Filed: March 23, 2001
    Publication date: October 25, 2001
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kazuhiko Shima, Masahito Sato, Naoki Uchida, Yoichiro Shimura, Kenji Sato, Hidetoshi Kishimoto