Patents by Inventor Yoichiro Yabe

Yoichiro Yabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7718117
    Abstract: A method of manufacturing a tungsten sputtering target includes pressing a high purity tungsten powder to form a pressed compact, first sintering the pressed compact at a temperature of 1450-1700° C. for one hour or longer after the pressed compact is heated at a heating-up rate of 2-5° C./min on the way to a maximum sintering temperature, second sintering the pressed compact to form a sintered body at a temperature of 1900° C. or higher for 5 hours or longer, working the sintered body to obtain a shape of a target, subjecting the target to a grinding work of at least one of rotary grinding and polishing, and subjecting the target to a finishing work of at least one of etching and reverse sputtering.
    Type: Grant
    Filed: September 3, 2001
    Date of Patent: May 18, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koichi Watanabe, Yoichiro Yabe, Takashi Ishigami, Takashi Watanabe, Hitoshi Aoyama, Yasuo Kohsaka, Yukinobu Suzuki
  • Patent number: 6855236
    Abstract: A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 ?m, and distances to a bottom of profile valley line Rv and to a top of profile peak line are in the ranges from 20 to 70 ?m, respectively. Furthermore, a spray deposit has a low hardness coat selected from an Al base spray deposit of Hv 30 (Vickers hardness) or less, a Cu base spray deposit of Hv 100 or less, a Ni base spray deposit of Hv 200 or less, a Ti base spray deposit of Hv 300 or less, a Mo base spray deposit of Hv 300 or less and a W base spray deposit of Hv 500 or less. Such component for a vacuum deposition apparatus may suppress, with stability and effectiveness, peeling of deposition material adhering on a component during deposition. In addition, the number of apparatus cleaning and of exchange of components may be largely reduced.
    Type: Grant
    Filed: December 28, 2000
    Date of Patent: February 15, 2005
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Michio Sato, Takashi Nakamura, Yoichiro Yabe
  • Publication number: 20050029094
    Abstract: The tungsten sputtering target of the present invention is characterized in that a half band width of a peak corresponding to a crystal plane (110) of the target is 0.35 or less when a surface of the target to be sputtered is analyzed by X-ray diffraction. Further, the method of manufacturing the tungsten sputtering target of the present invention is characterized by comprising the steps of: pressing a high purity tungsten powder to form a pressed compact; sintering the pressed compact to form a sintered body; working the sintered body to obtain a shape of a target; subjecting the target to a grinding work of at least one of rotary grinding and polishing; and subjecting the target to a finishing work of at least one of etching and reverse sputtering.
    Type: Application
    Filed: September 3, 2001
    Publication date: February 10, 2005
    Inventors: Koichi Watanabe, Yoichiro Yabe, Takashi Ishigami, Takashi Watanabe, Hitoshi Aoyama, Yasuo Kohsaka, Yukinobu Suzuki
  • Publication number: 20030121777
    Abstract: A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 &mgr;m, and distances to a bottom of profile valley line Rv and to a top of profile peak line are in the ranges from 20 to 70 &mgr;m, respectively. Furthermore, a spray deposit has a low hardness coat selected from an Al base spray deposit of Hv 30 (Vickers hardness) or less, a Cu base spray deposit of Hv 100 or less, a Ni base spray deposit of Hv 200 or less, a Ti base spray deposit of Hv 300 or less, a Mo base spray deposit of Hv 300 or less and a W base spray deposit of Hv 500 or less. Such component for a vacuum deposition apparatus may suppress, with stability and effectiveness, peeling of deposition material adhering on a component during deposition.
    Type: Application
    Filed: August 20, 2001
    Publication date: July 3, 2003
    Inventors: MIchio Sato, Takashi Nakamura, Yoichiro Yabe
  • Patent number: 6225741
    Abstract: An EL panel package film comprises, for example, a PCTFE film or a PET film having a moistureproof layer. This EL panel package film has irregularities of 3 &mgr;m or more in arithmetic average roughness (Ra) and 10 &mgr;m or more in maximum height (Ry) specified in JIS G 0601 on at least one of its surfaces. The EL panel is configured by using the EL panel package film having such surface irregularities as a package film on at least a light emitting surface side. Oscillations produced due to the polarity inversion of an alternate voltage applied to the EL panel are absorbed and dispersed by the irregularities formed on the package film surface. A LCD module has such an EL panel as the backlight. Noise from the LCD cell surface is reduced.
    Type: Grant
    Filed: February 3, 1999
    Date of Patent: May 1, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mitsuo Nakamura, Yoichiro Yabe