Abstract: The ceramic substrate for electronic circuit of the present invention comprises a ceramic layer and a conductive layer which is patterned on the ceramic layer, wherein the conductive layer comprises copper or an alloy containing copper as its main component. The ceramic layer entirely comprises a complex oxide or an oxide solid solution containing copper element and at least one component excluding copper element. Moreover, the ceramic layer is insulated.

Abstract: The invention provides a dielectric ceramic including as the main component a complex oxide formed of both Zr and Ti, at least one component selected from the group (A) consisting of {Mg, Co, Zn, Ni and Mn} and at least one component selected from the group (B) consisting of {Nb and Ta} and a TE.sub.01 .delta.-mode dielectric resonator including the dielectric ceramic, and also the invention provides a dielectric ceramic composition expressed by Formula (a):xZrO.sub.2 --yTiO.sub.2 --zA.sub.(1+w)/3 Nb.sub.(2-w)/3 O.sub.2Formula (a)wherein A denotes at least one component selected from the group (A) consisting of {Mg, Co, Zn, Ni and Mn},x, y and z denote molar fractions ranging from 0.10 to 0.60, 0.20 to 0.60 and 0.01 to 0.70, respectively, and have the relation represented by Formula (a):x+y+z=1 Formula (a)and w denotes a value of 0 to 1.50, and a TE.sub.01 .delta.-mode dielectric resonator in which using the dielectric ceramic.

Abstract: The invention provides a dielectric ceramic including as the main component a complex oxide formed of both Zr and Ti, at least one component selected from the group (A) consisting of {Mg, Co, Zn, Ni and Mn} and at least one component selected from the group (B) consisting of {Nb and Ta} and a TE.sub.01 .delta.-mode dielectric resonator including the dielectric ceramic, and also the invention provides a dielectric ceramic composition expressed by Formula (a):xZrO.sub.2 --yTiO.sub.2 --zA.sub.(1+w)/3 Nb.sub.(2-w)/3 O.sub.2(a)wherein A denotes at least one component selected from the group (A) consisting of {Mg, Co, Zn, Ni and Mn},x, y and z denote molar fractions ranging from 0.10 to 0.60, 0.20 to 0.60 and 0.01 to 0.70, respectively, and have the relation represented by Formula (.alpha.):x+y+z=1 (.alpha.)and w denotes a value of 0 to 1.50, and a TE.sub.01 .delta.-mode dielectric resonator in which using the dielectric ceramic.

Abstract: An improved electronic device having metal-glazing type end terminations comprising a surface metal phase of Sn or Zn, is produced by sintering a paste material containing a matrix metal powder (Cu and/or Ni), a fluxing metal powder and an organic binding material, so that the surface portion serves to improve wettability and solderability of the end termination owing to its composition being similar to solder.

Abstract: A multilayer ceramic capacitor comprises plural ceramic dielectric layers laminated one on another, and at least two internal electrodes separated by the ceramic dielectric layer and alternately terminated at the opposite sides of the laminated ceramic dielectric layers. The ceramic dielectric layers is composed of a complex oxide including a component (A), a component (B) and copper, wherein the component (A), is at least one element selected from the group consisting of Pb, Ca, Sr and Ba, but contains Pb at the least, wherein the component (B) is at least two elements selected from the group consisting of Mg, Ni, Zn, Ti, Ta, Nb and W, the molar ratio of the component (A) to component (B) being not less than 0.985, but not more than 1.110, and wherein the content of said copper in the complex oxide is more than 0.650 wt %, but not more than 2.200 wt % in terms of Cu.sub.2 O. The internal electrodes are composed of copper or an alloy mainly comprising copper.

Abstract: A multi-layer ceramic capacitor having a large capacitance comprising:(a) internal electrode layers whose thickness is y .mu.m, and(b) ceramic dielectric layers, whose thickness is x .mu.m, extending between the internal electrode layers, where x, y and x/y are defined by the formula 1.0.ltoreq.x.ltoreq.7.0, 0.07.ltoreq.y.ltoreq.0.7 and 10.0.ltoreq.x/y.ltoreq.100.0 respectively.

Abstract: A mutli-layer ceramic capacitor principally made up of (a) internal electrode layers containing at least copper and (b) ceramic dielectric layers extending between the internal electrode layers. The materials which form the ceramic include copper oxide and an oxide component A and B, which component A is selected from group I of lead, calcium, strontium, and barium, and component B is selected from group II of magnesia, nickel, titanium, zirconium, zinc, niobium, tantalum, and tungsten. The component A includes at least lead and component B includes at least two of the substances in group II, and wherein a ratio between values a and b are chosen so that 0.985<a/b<1.110, where the value a denotes the total mol value of the substances in the component A and the value b denotes the total mol value of the substances in component B. The copper oxide component is present in an amount of about 0.03 to 0.65 wt % in terms of Cu.sub.2 O content.

Abstract: Material forming dielectric ceramics includes an oxide containing a component A and a component B. The component A is selected from a group I of lead, calcium, strontium, and barium. The component B is selected from a group II of magnesium, nickel, titanium, zinc, niobium, and tungsten. The component A includes lead and at least one of the other substances in the group I. The component B includes at least two of the substances in the group II. A ratio between values a and b is chosen so that a/b>1.00, where the value a denotes a total mol value of the substances in the component A and the value b denotes a total mol value of the substances in the component B. Electrode layers are made of copper or an alloy principally containing copper. Since the firing temperature of the dielectric ceramics is low, excellent characteristics of a capacitor are enabled in spite of the fact that electrodes contain copper.

Abstract: A dielectric ceramic composition consisting essentially of:PbTi.sub.x (Mg.sub.1/3 Nb.sub.2/3).sub.y (Ni.sub.1/2 W.sub.1/2).sub.z O.sub.3wherein x+y+z=1, which allows low-temperature sintering and has a high dielectric constant, a low dielectric loss and a high specific resistivity.