Abstract: The invention relates to an Al—Ni—La system Al-based alloy sputtering target where a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 ?m to 3 ?m with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al—La system intermetallic compound having an average particle diameter of 0.2 ?m to 2 ?m with respect to a total area of the entire Al—La system intermetallic compound is 70% or more in terms of an area fraction.

Abstract: This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

Abstract: This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: The present invention relates to an Al-based alloy sputtering target, comprising Ni in an amount of 0.05 to 10 atomic percent, wherein the Al-based alloy sputtering target satisfies: (1) that a ratio of a P value to a total area of a sputtering surface is 70% or more, wherein the P value indicates a total of area fractions of <001>±15°, <011>±15°, <111>±15° and <311>±15°; (2) that a ratio of the area fraction of <011>±15° to the P value is 30% or more; and (3) that a ratio of the area fraction of <111>±15° to the P value is 10% or less, when crystallographic orientations <001>, <011>, <111> and <311> in a normal line direction to a sputtering surface of the Al-based alloy sputtering target are observed in accordance with the electron backscatter diffraction pattern method.

Abstract: The invention relates to an Al—Ni—La system Al-based alloy sputtering target comprising Ni and La, wherein, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 ?m to 3 ?m with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—La system intermetallic compound having an average particle diameter of 0.2 ?m to 2 ?m with respect to a total area of the entire Al—La system intermetallic compound is 70% or more in terms of an area fraction, the Al—La system intermetallic compound being mainly composed of Al and La.

Abstract: A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion.

Abstract: In a target for cathode discharging arc ion plating containing Al and Cr as an essential ingredient according to the invention, the thickness of the Al and Cr compound layer formed between Cr particles and Al contained in a target is 30 ?m or less. Alternatively, the total for the peak intensities of Al—Cr compound observed between diffraction angles between 10 to 80° by X-ray diffractiometry according to ?=2? method is 10% or less relative to the total for the peak intensities of Al, Cr and the Al—Cr compound. Further, the relative density of the target is 92% or more. The target is capable of forming hard films of high quality while preventing not uniform movement of arc spots and suppressing formation of macro particles.

Abstract: A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: In a target for cathode discharging arc ion plating containing Al and Cr as an essential ingredient according to the invention, the thickness of the Al and Cr compound layer formed between Cr particles and Al contained in a target is 30 &mgr;m or less. Alternatively, the total for the peak intensities of Al—Cr compound observed between diffraction angles between 10 to 80° by X-ray diffractiometry according to &thgr;=2&thgr; method is 10% or less relative to the total for the peak intensities of Al, Cr and the Al—Cr compound. Further, the relative density of the target is 92% or more. The target is capable of forming hard films of high quality while preventing not uniform movement of arc spots and suppressing formation of macro particles.