Abstract: A method of manufacturing a semiconductor device is provided which is capable of improving productivity and reliability. The method of manufacturing a semiconductor device (1) of the invention includes a sequential stacking process, an individual stacked body-obtaining process, and a base material bonding process. In the sequential stacking process, a block stacked body is obtained. The block stacked body is a block stacked body (2B) in which semiconductor blocks (10B, 12B, 14B, and 16B) are stacked in a state of not being solder-bonded. In the semiconductor blocks (10B, 12B, 14B, and 16B), a plurality of semiconductor components are arranged. In the individual stacked body obtaining process, an individual stacked body (2) is obtained in which terminals of the stacked semiconductor components are solder-bonded and which is cut from the block stacked body (2B) in a stacked semiconductor component unit.

Abstract: Provided is a method of manufacturing a semiconductor device that has a plurality of semiconductor components and a plurality of resin layers, the method including: a step in which resin layers and semiconductor components are laminated alternately on a substrate, and the same is adhered by being subjected to heating and pressurization at a temperature lower than the temperature at which the substrate and/or a solder layer of the semiconductor components melts; and a step in which heat and pressure are applied at a temperature at which the solder layer melts or a temperature higher than said temperature.

Abstract: Provided is a method of manufacturing a semiconductor device that has a plurality of semiconductor components and a plurality of resin layers, the method including: a step in which resin layers and semiconductor components are laminated alternately on a substrate, and the same is adhered by being subjected to heating and pressurization at a temperature lower than the temperature at which the substrate and/or a solder layer of the semiconductor components melts; and a step in which heat and pressure are applied at a temperature at which the solder layer melts or a temperature higher than said temperature.

Abstract: A method of manufacturing a semiconductor device is provided which is capable of improving productivity and reliability. The method of manufacturing a semiconductor device (1) of the invention includes a sequential stacking process, an individual stacked body-obtaining process, and a base material bonding process. In the sequential stacking process, a block stacked body is obtained. The block stacked body is a block stacked body (2B) in which semiconductor blocks (10B, 12B, 14B, and 16B) are stacked in a state of not being solder-bonded. In the semiconductor blocks (10B, 12B, 14B, and 16B), a plurality of semiconductor components are arranged. In the individual stacked body obtaining process, an individual stacked body (2) is obtained in which terminals of the stacked semiconductor components are solder-bonded and which is cut from the block stacked body (2B) in a stacked semiconductor component unit.

Abstract: Provided is a method of manufacturing an electronic device having a first electronic component having a first terminal and a second electronic component having a second terminal, wherein the first electric component is electrically connected to the second electronic component by connecting the first terminal to the second terminal with solder, the method including: providing a resin layer having a flux action between the first terminal and the second terminal to obtain a laminate including the first electronic component, the second electronic component, and the resin layer, wherein a solder is provided on the first terminal or the second terminal; soldering the first terminal and the second terminal; and curing the resin layer while pressing the laminate with a pressurized fluid.

Abstract: Disclosed is a method of manufacturing an electronic device, that includes obtaining a stack of the first electronic component and the second electronic component, while placing a resin layer which contains a flux-active compound and a thermosetting resin, between the first terminals and the second terminals; bonding the first terminals and the second terminals with solder, by heating the stack at a temperature not lower than the melting point of solder layers on the first terminals, while pressurizing the stack using a fluid; and curing the resin layer. The duration from the point of time immediately after the start of heating of the stack, up to the point of time when the temperature of the stack reaches the melting point of the solder layers, is set to 5 seconds or longer, and 15 minutes or shorter.

Abstract: Provided is a method of manufacturing an electronic device comprising a first electronic component having a first terminal and a second electronic component having a second terminal, wherein said first electric component is electrically connected to said second electronic component by connecting said first terminal to said second terminal with solder, the method comprising, providing a resin layer having a flux action between said first terminal and said second terminal to obtain a laminate including said first electronic component, said second electronic component, and said resin layer, wherein a solder is provided on said first terminal or said second terminal; soldering said first terminal and said second terminal; and curing said resin layer while pressing said laminate with a pressurized fluid.