Abstract: A cold plate includes: a metal base plate having a first surface, a second surface on a side opposite the first surface, and fins disposed in parallel on the first surface; and a topped cylindrical resin cover covering the fins. The first surface has a recessed portion recessed toward the second surface. The topped cylindrical resin cover is heat-fused to the metal base plate on an inner surface of the recessed portion.

Abstract: A processing technique of a semiconductor substrate which can improve a capability of a solid immersion lens in case of processing the semiconductor substrate and forming the solid immersion lens on its surface is provided.

Abstract: It is an object to obtain a scanning probe microscope capable of effectively suppressing a reduction in precision in a measurement. A conductive probe (2C) has such a pyramid structure as to be expanded from a tip portion to a bottom surface (a surface on which a cantilever (1) is to be formed) and a semiconductor integrated circuit (12) is formed in a side surface of the conductive probe (2C). An amplifying circuit (12a) to be the semiconductor integrated circuit (12) amplifies an electrical characteristic signal given from the conductive probe (2C) to send the electrical characteristic signal to a signal processor (10) through a conductive cantilever (1C) and a signal cable (9).

Abstract: An insulating film provided on an underlying layer (1) is selectively removed, thereby forming an insulating columnar body (4) standing on the underlying layer (1). A conductive film (7) is provided to cover the columnar body (4). Next, an interlayer insulating film (9) is provided to bury the columnar body (4) and the conductive film (7). The upper surface of the interlayer insulating film (9) is polished and planarized to the extent that the conductive film (7) is exposed. Thereafter an upper interconnect line (10) is provided. A lower interconnect line (8) and the upper interconnect line (10) are thereby connected through the conductive film (7).

Abstract: It is an object to obtain a scanning probe microscope capable of effectively suppressing a reduction in precision in a measurement. A conductive probe (2C) has such a pyramid structure as to be expanded from a tip portion to a bottom surface (a surface on which a cantilever (1) is to be formed) and a semiconductor integrated circuit (12) is formed in a side surface of the conductive probe (2C). An amplifying circuit (12a) to be the semiconductor integrated circuit (12) amplifies an electrical characteristic signal given from the conductive probe (2C) to send the electrical characteristic signal to a signal processor (10) through a conductive cantilever (1C) and a signal cable (9) (FIG. 1).

Abstract: A method of detecting and analyzing impurities wherein a substrate is cleaned by heating it under vacuum, a liquid sample is dropped on a surface of the substrate under vacuum which vacuum is less than that of the previous step, the liquid sample which has thus been dropped on the substrate is dried by reducing the pressure of the atmosphere surrounding the substrate, and impurities contained in the liquid sample are detected and analyzed by examining the surface of the substrate. Thus, this method is adapted to minimize the risk of any foreign matter becoming mixed with the sample liquid, to thus ensure a high level of precision in the detection and analysis of impurities.

Abstract: A read only memory device comprises a first electrode, and a second electrode arranged overlapping with the first electrode so as to be geometrically in connection at the intersection. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed electrode out of said electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at the intersection corresponding to a prescribed stored data.In the manufacturing method, the first and second electrodes are formed and, thereafter, a high resistance region is formed by irradiating focused ion beam.

Abstract: A semiconductor device having a trench (30) comprises a semiconductor substrate (11), a plurality of elements (13) provided on the semiconductor substrate, a trench (30) provided between the elements and an insulating material (12) embedded in the trench for isolating the elements. The trench has its bottom portion region enlarged in both sides.The semiconductor device is manufactured by enlarging the bottom portion region of the trench by etching.

Abstract: A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

Abstract: A read only memory device includes a first electrode and a second electrode arranged in an overlapping relation with the first electrode so as to be geometrically in connection at an intersection therewith corresponding to a storage location for one type of data. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed one of the two electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at an intersection corresponding to a storage location for another type of stored data. The high resistance region is formed by irradiating an intersection with a focused ion beam.

Abstract: A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

Abstract: A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connectig the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

Abstract: A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process including the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed in greatly reduced.

Abstract: In a method for identifying blistered film in layered films, a focused ion beam irradiates the approximate center of the blister and a portion which has no blister, and individual sets of the measurement data relating to the respective numbers of secondary electrons generated by the irradiation are compared to determine which film of layered films has blistered. Since the focused ion beam is employed, the present method is applicable to the detection of a small blister in layered films. Furthermore, since an enormous number of cutting operations as might have been required in the prior art are eliminated, the present method can be carried out, stably, positively and economically.

Abstract: In order to cut a portion of an aluminum interconnection in an aluminum circuit to be disconnected, the aluminum interconnection portion in the region to be cut is covered with a hydrogen-containing silicon nitride film by plasma CVD and is then irradiated with laser beams in an operating sequence consisting of three steps: the first step with relatively low power intensity and long irradiation time duration, the second step with intermediate power intensity and short irradiation time duration and the third step with relatively high power intensity and shortest irradiation time duration.

Abstract: In order to cut a portion of an aluminum interconnection to be disconnected in an aluminum circuit, the aluminum interconnection portion in the region to be cut is covered with a hydrogen-containing silicon nitride film by plasma CVD and is then irradiated with laser beams in an operating sequence consisting of three steps: the first step with relatively low power intensity and long irradiation time duration, the second step with intermediate power intensity and short irradiation time duration and the third step with relatively high power intensity and shortest irradiation time duration.

Abstract: A method of treating a silicon nitride film formed by plasma deposition and deposited on a substrate, which comprises: (1) irradiating the silicon nitride film, and (2) heating the silicon nitride film during the irradiating.

Abstract: A process for producing a semiconductor device includes the step of locally heating and fusing an island of a polycrystalline or amorphous semiconductor layer which is formed on and surrounded by an insulator. In the process, at least one ridge is formed on the underlying insulator before the formation of the semiconductor layer.

Abstract: Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.

Abstract: A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.